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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7492TRPBF

Name: IRF7492TRPBF
Brand: Infineon Technologies
SKU: IRF7492TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7492TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7492TRPBF.pdf

Description:: MOSFET N-CH 200V 3.7A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7492TRPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 3.7 A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 79 mΩ R_DS(on) at V_GS = 10 V, 39 nC total gate charge, and fully characterized C_oss,eff = 150 pF to simplify snubberless flyback and resonant converter design.

For engineers reviewing the IRF7492TRPBF datasheet, IRF7492TRPBF pinout, IRF7492TRPBF application, or IRF7492TRPBF equivalent, key selection criteria include avalanche energy rating (130 mJ), dv/dt ruggedness (9.5 V/ns), body diode recovery (trr = 69 ns), and thermal resistance (R_θJA = 50 °C/W).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low Q_gd/Q_g ratio (15/39 nC), enabling fast switching with reduced Miller-induced shoot-through risk in synchronous buck stages. Its SO-8 footprint supports dual-device paralleling without layout rework.

The device integrates a robust body diode with V_SD = 1.3 V at I_S = 2.2 A and controlled reverse recovery (Q_rr = 200–310 nC), making it suitable for non-isolated topologies where freewheeling diode conduction occurs during dead time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports 48 V input DC-DC systems with ≥2× voltage margin against transients.
R_DS(on) max	79 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 3.7 A continuous drain current.
Q_g	39 nC - Allows efficient gate drive with standard 1-A peak drivers at 500 kHz switching.
C_oss,eff	150 pF - Reduces turn-off energy loss and simplifies zero-voltage switching (ZVS) design.
E_AS	130 mJ - Withstands unclamped inductive switching events in hard-switched converters.
trr	69 ns - Limits reverse recovery ringing and EMI in high-dv/dt environments.
R_θJA	50 °C/W - Requires ≤2.5 W power dissipation for safe operation at 70°C ambient on standard PCB.

Pinout & Package

IRF7492TRPBF uses the industry-standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–8 for enhanced thermal performance and current handling.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8 (D)	Drain	Parallel-connected high-side switch node; ties directly to heatsink plane for thermal relief.
5 (G)	Gate	High-impedance control input requiring <40 nC charge for full enhancement; sensitive to ESD.
7–8 (S)	Source	Power return path and reference for gate drive; shared with body diode cathode.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	38% - Minimizes Miller plateau duration, improving controllability in high-frequency PWM.
Fully characterized C_oss,eff	150 pF - Enables accurate turn-off loss calculation and ZVS point prediction.
Avalanche-rated	130 mJ single-pulse - Eliminates need for external clamping in inductive load switching.
Lead-free SO-8	RoHS-compliant, JEDEC MS-012AA footprint - Ensures drop-in replacement compatibility and automated assembly reliability.
Body diode Q_rr	200–310 nC - Predictable recovery behavior reduces voltage overshoot during synchronous rectification.

Applications

Server VRM

Industrial DC-DC

Use Scenario: Point-of-load (POL) converter supplying 12 V → 1.2 V to CPU cores in rack-mounted servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 300–600 kHz with tight duty-cycle control.

Use Value: Low R_DS(on) and Q_g reduce conduction + switching losses, maintaining >92% efficiency at 30 A output.

Use Scenario: Isolated 24 V input to 5 V/3.3 V auxiliary supply in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward topology with 250 kHz switching.

Use Value: Avalanche rating and dv/dt ruggedness prevent failure during line surge events per IEC 61000-4-5.

Telecom PSU

LED Driver

Use Scenario: Half-bridge primary switch in 48 V telecom rectifier delivering 3 kW output.

IC Role / Device Role / Timing Role: Fast-switching high-voltage switch with body-diode conduction during dead time.

Use Value: Controlled trr and Q_rr suppress voltage spikes across transformer leakage inductance.

Use Scenario: Buck-based constant-current driver for high-brightness LED arrays in street lighting.

IC Role / Device Role / Timing Role: Main power switch modulating 350 mA–2 A LED current at 100–500 kHz.

Use Value: SO-8 thermal performance enables compact heatsink-less design up to 15 W output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP20NM50FP	500 V V_DS, 20 A I_D, TO-220FP package, R_DS(on) = 250 mΩ	Higher voltage rating but larger package and higher R_DS(on); suited for offline SMPS, not high-frequency POL.	Select only if system requires >300 V blocking and can accommodate through-hole mounting.
SiHFL120	200 V V_DS, 4.5 A I_D, SO-8, R_DS(on) = 72 mΩ, Q_g = 32 nC	Lower gate charge and slightly better R_DS(on); identical footprint and thermal profile.	Preferred for new designs targeting lower drive loss and tighter EMI control at >1 MHz.

Compared with STP20NM50FP and SiHFL120, IRF7492TRPBF offers balanced trade-offs between gate drive simplicity, thermal density, and avalanche robustness-making it optimal for space-constrained, medium-power DC-DC stages where SO-8 manufacturability and predictable recovery are critical.

Availability

IRF7492TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom power supplies requiring stable component supply and RoHS-compliant packaging.

Supply support for IRF7492TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

IRF7492TRPBF belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-frequency switching in compact power conversion systems where thermal density and switching predictability are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF7492TRPBF supports 3.0 A continuous drain current at T_A = 70°C with proper PCB copper area (1 inch²). This derating reflects its 2.5 W power dissipation limit and 50 °C/W junction-to-ambient thermal resistance. Operation above this current requires forced air cooling or thermal vias under the drain pads.

Does this MOSFET require a gate resistor for stability in 500 kHz operation?

Yes-a 6.5 Ω gate resistor is specified in the datasheet for switching time characterization and EMI control. At 500 kHz, this value damps gate oscillation while keeping turn-on delay (15 ns) and rise time (13 ns) within acceptable limits. Lower values may cause ringing; higher values increase switching loss.

Can IRF7492TRPBF be used in synchronous rectification mode?

No-it is an N-channel MOSFET intended for high-side switching only. For synchronous rectification on the low side, a complementary P-channel or N-channel with appropriate gate drive (e.g., bootstrap or isolated supply) is required. Its body diode is rated for 2.2 A continuous source current, not for sustained synchronous conduction.

Is the SO-8 package lead-free and RoHS compliant?

Yes-the "PbF" suffix in IRF7492TRPBF confirms lead-free construction per RoHS Directive 2011/65/EU. The device uses matte tin plating over copper leads and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH.

IRF7492TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 79mOhm @ 2.2A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7492TRPBF FAQ

1.How can I place an order for IRF7492TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7492TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7492TRPBF reliable?

The price and inventory of IRF7492TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7492TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7492TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7492TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7492TRPBF?

IRF7492TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7492TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7492TRPBF?

For technical support, including IRF7492TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7492TRPBF requirements.

6.How does Aetrix verify that IRF7492TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7492TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7492TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7492TRPBF?

All IRF7492TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7492TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7492TRPBF part is unused and in its original packaging.

Return procedure for IRF7492TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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