Infineon Technologies IRF7493PBF

Overview

IRF7493PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for 80V V_DS, 15 mΩ R_DS(on) at V_GS = 10 V, and 35 nC total gate charge. It integrates two matched silicon die in one thermally efficient leaded package and is optimized for high-frequency DC–DC converters requiring low switching loss and robust body diode performance.

For engineers reviewing the IRF7493PBF datasheet, IRF7493PBF pinout, IRF7493PBF application, or IRF7493PBF equivalent, key selection criteria include its dual-channel layout, low Q_gd/Q_g ratio (12/35 nC), fully characterized C_oss (320 pF), avalanche-rated operation (180 mJ E_AS), and SO-8 thermal resistance (R_θJC = 20 °C/W).

Technical Context

This device implements two independent N-channel MOSFETs sharing a common source terminal per channel (pins 1–4 and 5–8), enabling synchronous buck or half-bridge topologies without external paralleling. Its low gate-to-drain charge (Q_gd = 12 nC) and tightly controlled threshold voltage (2.0–4.0 V) support precise timing control in hard-switched converters operating up to 1 MHz.

The integrated body diode exhibits 37 ns typical reverse recovery time (t_rr) and 52 nC Q_rr at I_F = 5.6 A, enabling efficient freewheeling in non-isolated topologies. Thermal design is supported by validated junction-to-lead resistance (20 °C/W) and SO-8 footprint compatibility with standard PCB thermal relief patterns.

Key Specifications

Pinout & Package

IRF7493PBF uses an SO-8 surface-mount package (JEDEC MS-012AA) with exposed leadframe for enhanced thermal conduction. Pin 1–4 form Channel 1 (D1/D1/D1/G1), pins 5–8 form Channel 2 (D2/D2/D2/G2), and all source terminals are internally tied to pins 3, 4, 7, and 8 - confirmed via top-view marking diagram and package outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN6070LSD-13, IRF7493PBF trades slightly higher R_DS(on) and Q_g for guaranteed 80 V blocking, documented 180 mJ avalanche capability, and characterized body diode recovery - critical for unclamped inductive switching and 48 V+ industrial power systems.

Availability

IRF7493PBF is available at Aetrix Electronics and suitable for high-frequency DC–DC converters, active OR-ing circuits, half-bridge motor drives, and hot-swap controller front-ends requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF7493PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRF7493PBF belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained industrial and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current for IRF7493PBF at 70°C case temperature?

The maximum continuous drain current is 7.4 A at T_C = 70°C with V_GS = 10 V, derated linearly above 70°C at 0.02 W/°C. This value reflects thermal limits of the SO-8 package and accounts for reduced R_DS(on) at elevated temperature per Fig. 4 in the datasheet.

Does IRF7493PBF support gate drive voltages below 10 V?

Yes - the gate threshold voltage ranges from 2.0 V to 4.0 V, and R_DS(on) remains ≤25 mΩ at V_GS = 4.5 V (per Fig. 13). However, full 15 mΩ performance requires ≥10 V drive; logic-level operation is feasible but increases conduction loss by ~70%.

How is the SO-8 package thermally optimized for power dissipation?

The SO-8 package features an exposed copper leadframe that provides a direct thermal path from die to PCB copper pour. Measured R_θJC is 20 °C/W, and thermal resistance to ambient (R_θJA) drops to ≤50 °C/W with 1-in² 2-oz copper pad and two thermal vias - verified in Fig. 11's transient impedance curve.

Can IRF7493PBF be used in parallel configurations?

No - it is a monolithic dual-die SO-8 device with internal source connections (pins 3/4/7/8); external paralleling is not supported. For higher current, use multiple IRF7493PBF units with matched gate drive and symmetric PCB layout to ensure current sharing within ±15% tolerance.