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Infineon Technologies IRF7493TR
- Part No.:
- IRF7493TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7493TR.pdf
- Description:
- MOSFET N-CH 80V 9.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:7,110
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Product details
Overview
IRF7493TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, configured as two independent 80V/9.3A switches with 15 mΩ RDS(on) at VGS = 10 V and 35 nC total gate charge. It integrates body diodes and is optimized for synchronous rectification and high-frequency DC–DC converters.
For engineers reviewing the IRF7493TR datasheet, IRF7493TR pinout, IRF7493TR application, or IRF7493TR equivalent, key selection criteria include its low Qg/Qgd ratio, fully characterized Coss (320 pF), avalanche-rated operation (180 mJ EAS), and SO-8 thermal performance (RθJC = 20 °C/W).
Technical Context
This dual MOSFET implements two discrete N-channel silicon power switches sharing a common source terminal per channel (pins 1–4 and 5–8), enabling half-bridge or dual-switch topologies without external paralleling. Its gate threshold voltage (2.0–4.0 V) supports standard 5 V and 10 V logic-level drive.
Dynamic parameters are fully characterized across temperature: Ciss = 1510 pF, Coss = 320 pF, and Crss = 130 pF at VDS = 25 V; switching times (td(on) = 8.3 ns, tf = 12 ns) reflect low gate-drain charge (Qgd = 12 nC), minimizing Miller-induced turn-off delay.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 80 V - maximum blocking voltage for buck converter high-side or synchronous rectifier applications |
| RDS(on) max | 15 mΩ @ VGS = 10 V - enables ≤0.8 W conduction loss at 9.3 A continuous drain current |
| Qg typ. | 35 nC - determines gate driver power requirement and switching speed in 100–500 kHz DC–DC stages |
| EAS | 180 mJ - supports unclamped inductive switching in motor drives or hot-swap circuits without external snubbers |
| Coss | 320 pF - directly usable in resonant LLC or ZVS design calculations per AN1001 |
| RθJC | 20 °C/W - allows 3.5 W dissipation with ≤70 °C junction rise above case in SO-8 layout |
Pinout & Package
IRF7493TR uses an SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, with exposed leadframe for enhanced thermal conduction. Pin 1–4 form Channel 1 (D1/D1/D1/G1), pins 5–8 form Channel 2 (D2/D2/D2/G2); sources are internally tied to pins 3,4 and 7,8 respectively.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1,2,3 | Drain 1 | High-current output node for Channel 1; electrically common; connects to input rail or transformer primary |
| 4 | Gate 1 | Control terminal for Channel 1; requires 10 V drive for full enhancement; Miller capacitance critical for dV/dt immunity |
| 5,6,7 | Drain 2 | High-current output node for Channel 2; isolated from Channel 1; used for complementary switching or dual outputs |
| 8 | Gate 2 | Independent control terminal for Channel 2; enables phase-shifted or interleaved operation without cross-talk |
Key Features
| Feature | Design Value |
|---|---|
| Low Qg/Qgd ratio | 35 nC / 12 nC = 2.9 - reduces gate drive losses and improves controllability during hard switching |
| Fully characterized Coss | 320 pF at VDS = 25 V - eliminates iterative capacitor modeling for soft-switching timing prediction |
| Avalanche-rated | 180 mJ single-pulse EAS - permits reliable operation under transient overcurrent without derating |
| Body diode trr | 37–56 ns - enables efficient synchronous rectification in forward converters up to 300 kHz |
Applications
| Server VRM | USB PD Adapter |
|---|---|
Use Scenario: 48 V–12 V intermediate bus conversion in AI accelerator racks requiring >95% efficiency at 30–60 A load. IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier replacing Schottky diodes in multiphase buck stages; each channel handles one phase leg. Use Value: 15 mΩ RDS(on) cuts conduction loss by 65% vs. 40 V Schottky; Qgd-driven zero-voltage switching reduces EMI. | Use Scenario: Compact 65 W USB-C power adapter with GaN half-bridge primary and synchronous secondary. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier controlling 5–20 V output; dual configuration supports parallel winding or redundancy. Use Value: 320 pF Coss enables precise dead-time tuning; body diode trr < 56 ns prevents reverse recovery spikes during 200 kHz switching. |
| Industrial PLC I/O Module | Automotive DC–DC Converter |
Use Scenario: 24 V input to 3.3/5/12 V distributed power rails in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Dual high-side switch for isolated auxiliary supplies; channels independently controlled for fault containment. Use Value: 80 V VDS withstands 40 V load-dump transients; avalanche rating eliminates need for TVS clamping on each channel. | Use Scenario: 12 V–48 V bidirectional DC–DC for 48 V mild-hybrid systems with regenerative braking energy recovery. IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost stage; body diode conducts during reverse power flow (regen mode). Use Value: 9.3 A continuous ID supports 300 W peak power; 1.3 V VSD body diode drop minimizes conduction loss during regen intervals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP | RDS(on) = 12.5 mΩ @ 10 V; Qg = 32 nC; SO-8; 80 V rating | Lower RDS(on) improves conduction loss but higher Coss (420 pF) increases switching loss above 250 kHz | Prefer for <200 kHz, high-current applications where thermal margin is constrained |
| DMN6016LFG | RDS(on) = 16.5 mΩ @ 10 V; Qg = 28 nC; 60 V rating; same SO-8 footprint | Lower voltage rating limits use to ≤48 V systems; lower Qg enables faster switching but reduced avalanche robustness (EAS = 120 mJ) | Prefer for cost-sensitive 48 V telecom supplies where transient stress is managed externally |
Compared with SiR872DP and DMN6016LFG, IRF7493TR offers balanced trade-offs: its 80 V rating and 180 mJ EAS support automotive and industrial transients, while 35 nC Qg and 320 pF Coss maintain efficiency across 100–500 kHz DC–DC designs without requiring gate resistors for oscillation damping.
Availability
IRF7493TR is available at Aetrix Electronics and suitable for server VRMs, USB PD adapters, industrial PLC I/O modules, and automotive DC–DC converters requiring stable component supply and long-term production continuity.
Supply support for IRF7493TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.
The IRF7493TR belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-frequency power conversion in space-constrained industrial and computing applications.
FAQ
What is the maximum continuous drain current per channel at 70°C case temperature?
The IRF7493TR supports 7.4 A continuous drain current per channel at TC = 70°C, derated from 9.3 A at 25°C using the linear derating factor of 0.02 W/°C and RDS(on) = 15 mΩ. This value assumes SO-8 PCB layout with ≥1 in² 2-oz copper pour and no forced airflow.
Does IRF7493TR integrate internal gate protection diodes?
No, IRF7493TR does not include integrated gate protection diodes. External 12 V Zener clamps (e.g., BZX84-C12) between gate and source are recommended for systems subject to >20 V gate transients, as specified in Absolute Maximum Ratings (VGS = ±20 V).
Can IRF7493TR be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (1.6× increase from 25°C to 150°C) ensures inherent current sharing when paralleled. Layout must match gate loop inductance and thermal coupling; gate resistors ≥10 Ω per channel suppress oscillation during turn-on.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes - the body diode has trr = 37–56 ns and Qrr = 52–78 nC at IF = 5.6 A, making it suitable for synchronous rectification up to 300 kHz. For optimal performance, gate drive must ensure turn-on before body diode conduction ends to avoid snap-off voltage spikes.
IRF7493TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 80 V
- Current - Continuous Drain (Id) @ 25°C:
- 9.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 15mOhm @ 5.6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1510 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7493TR FAQ
1.How can I place an order for IRF7493TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7493TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7493TR reliable?
The price and inventory of IRF7493TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7493TR is usually 5 days.
3.What payment methods are accepted for IRF7493TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7493TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7493TR?
IRF7493TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7493TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7493TR?
For technical support, including IRF7493TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7493TR requirements.
6.How does Aetrix verify that IRF7493TR is sourced from the original manufacturer or authorized distributors?
All IRF7493TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7493TR meets industry standards.
7.What is the process for return or replacement of IRF7493TR?
All IRF7493TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7493TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7493TR part is unused and in its original packaging.
Return procedure for IRF7493TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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