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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7494PBF

Name: IRF7494PBF
Brand: Infineon Technologies
SKU: IRF7494PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7494PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7494PBF.pdf

Description:: MOSFET N-CH 150V 5.1A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7494PBF from Infineon Technologies (formerly International Rectifier) is a 150V, 5.1A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 44 mΩ R_DS(on) at V_GS = 10 V, 13 nC Q_gd, and 189 pF effective output capacitance (C_oss,eff), enabling low switching loss in synchronous buck topologies used in notebook CPU VRMs.

For engineers reviewing the IRF7494PBF datasheet, IRF7494PBF pinout, IRF7494PBF application, or IRF7494PBF equivalent, key selection criteria include gate charge profile, avalanche ruggedness (E_AS = 700 mJ), body diode reverse recovery (Q_rr = 93 nC), thermal resistance (R_θJA = 50 °C/W), and SO-8 lead-free compliance per JEDEC J-STD-020.

Technical Context

This MOSFET employs a trench-gated HEXFET structure with fully characterized C_iss/C_oss/C_rss and effective C_oss (189 pF) derived from 0–80% V_DSS charging time. Its gate threshold voltage (2.5–4.0 V) and transconductance (12 S typical) support robust drive margin in 5–12 V gate-drive systems.

Avalanche capability is specified to 3.1 A I_AR and 700 mJ E_AS under unclamped inductive switching (L = 55 mH, R_G = 25 Ω). The integrated body diode exhibits 1.3 V forward voltage at 3.1 A and 45 ns t_rr, critical for synchronous rectification efficiency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 12 V input, 48 V bus, and 150 V industrial DC link applications.
R_DS(on) max	44 mΩ @ V_GS = 10 V - Enables ≤0.23 W conduction loss at 5.1 A continuous current, reducing thermal stress in compact PCB layouts.
Q_gd	13 nC - Low Miller charge minimizes dv/dt-induced false turn-on and improves hard-switching stability in high-side configurations.
C_oss,eff	189 pF - Fixed capacitance calibrated to match actual V_DS rise time from 0 to 120 V, simplifying snubberless flyback and resonant LLC design.
E_AS	700 mJ - Single-pulse avalanche energy rating supports reliable operation during load dump or short-circuit events without external clamping.
t_rr	45 ns - Fast body diode recovery reduces cross-conduction loss and EMI in synchronous buck converters operating above 300 kHz.

Pinout & Package

IRF7494PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pads thermally connected to pins 1–4 and 6–8. The package supports PCB copper area heatsinking and complies with lead-free reflow profiles (J-STD-020).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	High-current power path; electrically and thermally tied to internal die drain metallization and exposed pad.
5	Gate (G)	Control terminal requiring <13 nC total charge for full enhancement; sensitive to ESD (±20 V max V_GS).
6, 7, 8	Source (S)	Power return node; forms common reference for gate drive and current sensing; connects to internal body diode cathode.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	37% (13/35 nC) - Reduces Miller plateau duration and improves switching controllability in high-frequency PWM stages.
Fully characterized C_oss,eff	189 pF - Replaces variable C_oss curve with single value for accurate soft-switching timing prediction in LLC and ZVS designs.
Avalanche-rated	700 mJ E_AS - Eliminates need for external avalanche clamps in offline SMPS and motor drive half-bridges.
Lead-free SO-8	JEDEC-compliant RoHS packaging - Supports automated assembly and meets IPC-J-STD-020D reflow requirements without solder joint reliability risk.

Applications

Server VRM

Notebook CPU Regulator

Use Scenario: High-density 4-phase buck converter delivering 1.0–1.3 V @ 100+ A to Xeon/EPYC processors.

IC Role / Device Role / Timing Role: Synchronous high-side switch with 300–600 kHz switching frequency and tight dead-time control.

Use Value: 44 mΩ R_DS(on) and 13 nC Q_gd minimize combined conduction + switching loss, enabling >92% efficiency at full load.

Use Scenario: Dual-phase 1.05 V core supply for mobile Core i7/i9 CPUs in ultrabooks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with fast body diode recovery to reduce shoot-through risk.

Use Value: 45 ns t_rr and 93 nC Q_rr cut reverse recovery loss by 35% vs. legacy MOSFETs, lowering thermal footprint on thin PCBs.

Industrial DC-DC Module

Telecom Intermediate Bus Converter

Use Scenario: 48 V input to 12 V isolated output module for PLC I/O modules with 20 A output.

IC Role / Device Role / Timing Role: Primary-side active clamp FET in active-clamp forward topology.

Use Value: 150 V V_DSS and 700 mJ E_AS withstand reflected voltage spikes and enable reliable clamp reset without snubbers.

Use Scenario: Non-isolated 54 V to 12 V intermediate bus converter in 1RU telecom shelf.

IC Role / Device Role / Timing Role: High-frequency (800 kHz) buck switch with minimal gate drive power demand.

Use Value: 35 nC Q_g enables direct drive from low-power PWM controllers (e.g., UCC28910), eliminating gate driver ICs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 38 mΩ @ 10 V; Q_gd = 11 nC; C_oss,eff = 165 pF; SO-8 package	Lower conduction loss but reduced avalanche rating (E_AS = 420 mJ)	Prefer for efficiency-critical, non-avalanche-stressed DC-DC where layout allows tighter thermal management.
IPB050N15N3 G	R_DS(on) = 5.0 mΩ @ 10 V; TO-263 package; Q_gd = 42 nC; C_oss,eff = 1120 pF	Higher current (120 A), larger footprint, higher gate charge increases drive loss	Prefer for high-current, lower-frequency (<200 kHz) industrial supplies where thermal headroom exists.

Compared with Si7852DP-T1-GE3 and IPB050N15N3 G, IRF7494PBF balances moderate R_DS(on), low Q_gd, and strong avalanche ruggedness-making it optimal for space-constrained, high-frequency, reliability-critical DC-DC converters where both switching efficiency and fault tolerance matter.

Availability

IRF7494PBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU regulators, industrial DC-DC modules, and telecom intermediate bus converters requiring stable component supply across multi-year production cycles.

Supply support for IRF7494PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET Power MOSFET product line delivers high-voltage, high-current discrete switches engineered for efficiency, ruggedness, and manufacturability in computing, telecom, and industrial power conversion systems.

FAQ

What is the maximum safe operating temperature for IRF7494PBF?

The junction temperature must not exceed +150 °C under steady-state operation. Derating begins at +25 °C ambient, with linear reduction of 0.02 W/°C above that point. Thermal resistance from junction to ambient is 50 °C/W on standard FR-4 PCB with 1-inch² copper pour, so maximum continuous power dissipation at 70 °C ambient is 1.6 W.

Does IRF7494PBF require a gate resistor for stability?

Yes-a gate resistor (typically 6.8 Ω to 22 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd and gate capacitance. Data sheet Fig. 10a shows test circuit with RG = 6.8 Ω; omitting it risks oscillation during turn-on and increased EMI in high-di/dt applications like multiphase VRMs.

Can IRF7494PBF be used in avalanche mode intentionally?

Yes-it is fully characterized for unclamped inductive switching with E_AS = 700 mJ at I_AS = 3.1 A and T_J = 25 °C (Fig. 15c). However, repetitive avalanche operation requires strict pulse width (<400 µs), duty cycle (<2%), and thermal monitoring; it is intended for fault protection-not steady-state operation.

How does the body diode performance compare to Schottky alternatives?

The integrated body diode has V_SD = 1.3 V at 3.1 A and t_rr = 45 ns, offering lower forward drop than most 150 V SiC Schottkys but higher than low-V_F silicon Schottkys. Its Q_rr = 93 nC is significantly lower than standard MOSFETs, making it viable for synchronous rectification where Schottky cost or voltage rating is prohibitive.

IRF7494PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1783 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7494PBF FAQ

1.How can I place an order for IRF7494PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7494PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7494PBF reliable?

The price and inventory of IRF7494PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7494PBF is usually 5 days.

3.What payment methods are accepted for IRF7494PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7494PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7494PBF?

IRF7494PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7494PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7494PBF?

For technical support, including IRF7494PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7494PBF requirements.

6.How does Aetrix verify that IRF7494PBF is sourced from the original manufacturer or authorized distributors?

All IRF7494PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7494PBF meets industry standards.

7.What is the process for return or replacement of IRF7494PBF?

All IRF7494PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7494PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7494PBF part is unused and in its original packaging.

Return procedure for IRF7494PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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