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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7494TR

Name: IRF7494TR
Brand: Infineon Technologies
SKU: IRF7494TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7494TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7494TR.pdf

Description:: MOSFET N-CH 150V 5.2A 8-SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7494TR from Infineon Technologies (formerly International Rectifier) is a 150V, 5.2A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC–DC converters. It features 44 mΩ R_DS(on) at V_GS = 10 V, 13 nC Q_gd, 170 pF C_oss(eff), and fully characterized avalanche capability (370 mJ E_AS). Used in synchronous buck stages of telecom and industrial power supplies.

For engineers reviewing the IRF7494TR datasheet, IRF7494TR pinout, IRF7494TR application, or IRF7494TR equivalent, key selection criteria include gate charge profile for ZVS/ZCS design, C_oss(eff)-based soft-switching timing, avalanche ruggedness under unclamped inductive switching, and SO-8 thermal performance with PCB copper area.

Technical Context

This MOSFET employs planar silicon process with integrated body diode and is rated for repetitive unclamped inductive switching up to I_AS = 3.1 A and E_AS = 370 mJ. Its low Q_gd/Q_g ratio (≈36%) supports fast, controllable turn-off in hard-switched topologies.

The device's C_oss(eff) = 170 pF is derived from measured output capacitance discharge behavior across 0–80% V_DSS, enabling accurate dead-time calculation in resonant converters. R_θJA = 50 °C/W (PCB mount) and R_θJL = 20 °C/W reflect its SO-8 lead-frame thermal path suitability for medium-power board-level designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage for 48 V input bus-derived converters with 2× transient margin
R_DS(on) max	44 mΩ @ V_GS = 10 V - Conduction loss of ≤0.24 W at 5.2 A DC, critical for thermal budget in compact SO-8 layout
Q_gd	13 nC - Miller charge determining dV/dt immunity and gate drive strength requirement in 500 kHz+ operation
C_oss(eff)	170 pF - Fixed-equivalent output capacitance used to compute resonant tank timing and zero-voltage switching thresholds
E_AS	370 mJ - Single-pulse avalanche energy rating confirming robustness during startup or overload in non-isolated DC–DC stages
t_r/t_f	13 ns / 14 ns - Rise/fall times measured at V_DD = 75 V, I_D = 3.1 A, defining minimum practical switching period
V_GS(th)	2.5–4.0 V - Threshold range ensuring reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers

Pinout & Package

IRF7494TR uses the industry-standard SO-8 surface-mount package (EIA-481 compliant), with exposed drain pad for enhanced thermal conduction. Dimensions: 4.9 × 6.0 × 1.75 mm (max height). Mounting requires minimum 1-inch² copper pour on PCB for rated R_θJA.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel internal drain connections tied to exposed pad - primary current path and main thermal interface to PCB
5	Gate (G)	Control terminal requiring <13 nC charge for full enhancement; sensitive to ringing due to low Q_gd
6, 7, 8	Source (S)	Three-source terminals providing low-inductance return path for synchronous rectification current

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	36% - Enables precise turn-off control and reduces risk of shoot-through in half-bridge configurations
Fully characterized C_oss(eff)	170 pF - Validated via application note AN1001 for accurate soft-switching timing in LLC and phase-shifted full-bridge designs
Avalanche-rated operation	370 mJ E_AS - Qualified per JEDEC JESD22-A110, supporting reliable operation under transient overcurrent without external snubbers
SO-8 thermal performance	R_θJL = 20 °C/W - Enables direct heat transfer from junction to PCB copper, reducing reliance on heatsinks in space-constrained modules
Body diode t_rr	55 ns - Fast recovery supports synchronous rectification in buck converters up to 1 MHz without significant reverse recovery loss

Applications

Telecom DC–DC Brick

Industrial PLC Power Module

Use Scenario: 48 V input to 12 V/5 V isolated or non-isolated conversion in compact telecom power bricks.

IC Role / Device Role: High-side switch in synchronous buck regulator stage handling up to 5.2 A continuous load.

Use Value: Low C_oss(eff) enables >92% efficiency at 500 kHz switching while maintaining thermal margin on 1-inch² copper.

Use Scenario: 24 V bus regulation for I/O power in programmable logic controller backplanes.

IC Role / Device Role: Primary switching element in compact, fanless 15 W DC–DC module with wide ambient temperature range.

Use Value: Avalanche rating ensures survival during motor-driver fault transients; SO-8 footprint simplifies automated assembly.

LED Driver Power Stage

Test Equipment SMPS

Use Scenario: Constant-current LED string driver with PWM dimming in architectural lighting systems.

IC Role / Device Role: Main switch controlling inductor current in step-down LED driver operating at 300–600 kHz.

Use Value: Fast t_r/t_f minimizes switching loss during high-duty-cycle dimming; low R_DS(on) maintains stable current regulation.

Use Scenario: Lab-grade bench power supply with adjustable 0–30 V, 0–3 A output using discrete MOSFET-based regulation.

IC Role / Device Role: Pass element in linear-plus-switching hybrid topology for low-noise, fast-transient response.

Use Value: Body diode t_rr and Q_rr values allow clean reverse recovery during dynamic load steps, reducing output ripple.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	R_DS(on) = 120 mΩ @ 10 V; V_DSS = 150 V; Q_gd = 12 nC; SO-8	Higher conduction loss limits use to ≤2 A loads; lower Q_gd improves dV/dt noise margin	Prefer where gate drive is weak or layout has high parasitic inductance, but avoid in thermally constrained 5 A designs
SiHFR024	R_DS(on) = 24 mΩ @ 10 V; V_DSS = 150 V; Q_gd = 17 nC; TO-252	Lower R_DS(on) improves efficiency at high current; TO-252 offers better R_θJA (40 °C/W) but larger footprint	Choose when thermal headroom is critical and board space allows DPAK; not drop-in compatible due to package change

Compared with STP16NF15 and SiHFR024, IRF7494TR delivers optimal balance of conduction loss, switching charge, and SO-8 thermal-mechanical fit for 3–5 A, 300–750 kHz DC–DC stages where board area and gate drive capability are constrained.

Availability

IRF7494TR is available at Aetrix Electronics and suitable for telecom DC–DC bricks, industrial PLC power modules, and LED driver power stages requiring stable component supply and long-term industrial qualification.

Supply support for IRF7494TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® product line was originally developed by International Rectifier and acquired by Infineon in 2015; it targets high-efficiency, high-reliability power conversion in industrial, telecom, and computing applications.

FAQ

What is the maximum recommended gate resistor value for IRF7494TR in a 500 kHz synchronous buck converter?

A 6.5 Ω gate resistor is specified in the datasheet for switching time characterization at 500 kHz. For stable operation, use 4.7–10 Ω to limit peak gate current while maintaining <20 ns rise/fall times. Lower values reduce switching loss but increase EMI risk; higher values delay turn-off and raise Q_gd-related losses.

Does IRF7494TR support 3.3 V logic-level gate drive?

No - V_GS(th) ranges from 2.5 V to 4.0 V, and R_DS(on) is only guaranteed at V_GS ≥ 10 V. At 3.3 V, the device remains in weak inversion with R_DS(on) > 1 Ω, causing excessive conduction loss. A level-shifting gate driver or 5 V/10 V supply is required for full enhancement.

How is C_oss(eff) = 170 pF determined, and why does it differ from the 220 pF C_oss value listed elsewhere in the datasheet?

C_oss(eff) is measured as the fixed capacitance that replicates the actual V_DS rise time from 0 to 120 V (80% of 150 V V_DSS) under constant-current conditions. The 220 pF C_oss is the small-signal value at V_DS = 25 V; C_oss(eff) reflects nonlinear depletion-layer behavior critical for soft-switching timing calculations.

Can IRF7494TR be used in parallel configurations for higher current capacity?

Yes - its positive R_DS(on) temperature coefficient (0.15 V/°C) enables current sharing. However, layout must ensure matched gate and source inductance across all paralleled devices. Derate total current by 15% and verify thermal coupling; SO-8 packages require individual thermal vias and shared copper pour to prevent localized hot spots.

IRF7494TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 5.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 44mOhm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1750 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7494TR FAQ

1.How can I place an order for IRF7494TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7494TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7494TR reliable?

The price and inventory of IRF7494TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7494TR is usually 5 days.

3.What payment methods are accepted for IRF7494TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7494TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7494TR?

IRF7494TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7494TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7494TR?

For technical support, including IRF7494TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7494TR requirements.

6.How does Aetrix verify that IRF7494TR is sourced from the original manufacturer or authorized distributors?

All IRF7494TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7494TR meets industry standards.

7.What is the process for return or replacement of IRF7494TR?

All IRF7494TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7494TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7494TR part is unused and in its original packaging.

Return procedure for IRF7494TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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