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Infineon Technologies IRF7494TRPBF
- Part No.:
- IRF7494TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7494TRPBF.pdf
- Description:
- MOSFET N-CH 150V 5.1A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:5,225
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Product details
Overview
IRF7494TRPBF from Infineon Technologies (formerly International Rectifier) is a 150V, 5.1A N-channel enhancement-mode Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It delivers 44 mΩ RDS(on) at VGS = 10 V, features low Qgd (13 nC) and Qg (53 nC), and integrates a robust body diode with 45 ns trr and 93 nC Qrr, enabling efficient synchronous rectification in buck converters.
For engineers reviewing the IRF7494TRPBF datasheet, IRF7494TRPBF pinout, IRF7494TRPBF application, or IRF7494TRPBF equivalent, key selection criteria include its 150 V VDSS, 44 mΩ on-resistance at 10 V gate drive, SO-8 thermal performance (RθJA = 50 °C/W), avalanche-rated operation (EAS = 700 mJ), and fully characterized Coss (222 pF) and Crss (104 pF) for hard-switching design validation.
Technical Context
This MOSFET employs a trench-gated HEXFET structure to achieve low gate charge and fast switching with minimal Miller effect. Its dynamic parameters-including 13 nC Qgd, 10 ns rise time, and 14 ns fall time-are specified at VDD = 75 V, ID = 3.1 A, RG = 6.8 Ω-enabling sub-500 kHz operation in isolated and non-isolated topologies.
The device is fully characterized for unclamped inductive switching (UIS), supporting single-pulse avalanche energy up to 700 mJ at IAS = 3.1 A. Its body diode exhibits 1.3 V forward voltage at 3.1 A and 45 ns reverse recovery time, making it suitable for freewheeling paths where diode conduction is brief and repetitive.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 150 V - maximum blocking voltage in hard-switched topologies like boost PFC or half-bridge LLC primary switches |
| RDS(on) max | 44 mΩ @ VGS = 10 V - defines conduction loss at full load in 12–48 V input DC-DC stages |
| ID continuous | 5.1 A @ TA = 25 °C - usable current rating under PCB-mount thermal conditions without heatsink |
| Qgd | 13 nC - Miller charge directly impacts turn-off delay and dV/dt immunity in high-side switching |
| Coss eff. | 189 pF - effective output capacitance used to calculate switching loss during zero-voltage transition |
| trr | 45 ns - reverse recovery time limiting minimum dead-time in synchronous rectifiers |
| EAS | 700 mJ - single-pulse avalanche energy rating confirming ruggedness against inductive transients |
Pinout & Package
IRF7494TRPBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AC), with exposed drain pads for enhanced thermal transfer to PCB copper. The package measures 4.9 × 6.0 mm and supports tape-and-reel automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Seven parallel internal drain connections - collectively handle full 5.1 A current and dissipate heat via exposed pad |
| 6 | Gate (G) | Single gate input - requires <10 V threshold margin for reliable turn-on; low Qg enables fast edge rates |
| Source (S) | Source (S) | Internally connected to pins 1–5 and 7–8 ground reference - forms return path for load current and gate drive loop |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 0.25 (13/53 nC) - reduces Miller-induced shoot-through risk in half-bridge configurations |
| Fully characterized Coss eff. | 189 pF - enables accurate calculation of turn-on loss in resonant and quasi-resonant converters |
| Body diode trr & Qrr | 45 ns / 93 nC - supports synchronous rectification in 300–500 kHz buck converters without external Schottky |
| Avalanche-rated | 700 mJ EAS - withstands inductive kickback in motor drive H-bridges and relay drivers without snubbers |
Applications
| High-Frequency Buck Converter | Synchronous Rectifier |
|---|---|
Use Scenario: 48 V input to 12 V/3 A output in telecom power supply operating at 400 kHz. IC Role / Device Role / Timing Role: Low-side switch controlling duty cycle and regulating output voltage via PWM feedback loop. Use Value: 44 mΩ RDS(on) minimizes conduction loss at 3 A, while 13 nC Qgd ensures clean turn-off under high dV/dt. | Use Scenario: Secondary-side rectification in isolated 24 V to 5 V flyback converter running at 350 kHz. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency. Use Value: Body diode trr = 45 ns allows safe commutation with 100 ns dead-time; 1.3 V VSD lowers conduction loss vs. 0.5 V Schottky at high temperature. |
| Half-Bridge Motor Driver | DC-DC Isolated Gate Driver Stage |
Use Scenario: 24 V brushed DC motor control with bidirectional PWM at 20 kHz. IC Role / Device Role / Timing Role: High-side and low-side switch in H-bridge configuration driving inductive load. Use Value: 700 mJ EAS rating absorbs back-EMF spikes during abrupt current reversal without clamping circuitry. | Use Scenario: Isolated gate drive stage powering SiC MOSFET gates in 1 kW LLC resonant converter. IC Role / Device Role / Timing Role: Level-shifting buffer stage delivering fast 10 V gate pulses across transformer-coupled isolation barrier. Use Value: Low Qg (53 nC) and fast tr/tf (10/14 ns) enable precise timing alignment between primary and secondary side gate signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7478TRPBF | 150 V VDSS, 6.3 A ID, 32 mΩ RDS(on) - lower on-resistance but higher Qg (62 nC) | Better conduction loss at >4 A, but slower switching limits use above 300 kHz | Select when thermal headroom is constrained and switching frequency ≤250 kHz |
| SI7850DP-T1-GE3 | 150 V VDSS, 4.8 A ID, 48 mΩ RDS(on), SO-8 - higher RDS(on) but tighter Qgd tolerance (11.5 ±15%) | More consistent Miller charge improves gate driver timing margin in high-volume production | Select when gate drive timing predictability outweighs 9% conduction loss penalty |
Compared with IRF7478TRPBF and SI7850DP-T1-GE3, IRF7494TRPBF offers the best balance of switching speed (13 nC Qgd, 10 ns tr) and conduction loss (44 mΩ) for 300–500 kHz DC-DC designs where both efficiency and layout simplicity matter.
Availability
IRF7494TRPBF is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, synchronous rectifiers, and half-bridge motor drives requiring stable component supply and lead-free compliance.
Supply support for IRF7494TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial gate drivers.
The IRF7494TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in consumer and industrial power conversion systems.
FAQ
Is IRF7494TRPBF suitable for 600 kHz operation?
Yes - its 10 ns rise time, 14 ns fall time, and 13 nC Qgd support reliable 600 kHz switching in hard-switched topologies when paired with a low-impedance gate driver (e.g., TC4427) and proper PCB layout minimizing gate loop inductance. Thermal derating must be applied above 25 °C ambient due to RθJA = 50 °C/W.
What is the maximum recommended gate resistor for IRF7494TRPBF?
The datasheet specifies switching times with RG = 6.8 Ω. For 400–600 kHz operation, RG between 2.2 Ω and 10 Ω is typical: lower values improve switching speed but increase EMI and gate driver stress; higher values reduce ringing but extend switching losses. Layout-dependent parasitics require empirical tuning.
Does IRF7494TRPBF have a built-in ESD protection diode?
No - IRF7494TRPBF lacks integrated ESD protection on the gate terminal. External gate protection (e.g., 12 V Zener clamp between G and S) is required in handling and board-level environments with >2 kV HBM risk. Gate oxide breakdown voltage is rated at ±20 V absolute maximum.
Can IRF7494TRPBF replace IRF7482TRPBF in existing designs?
Yes - both are SO-8 150 V N-channel MOSFETs with identical pinout and thermal footprint. IRF7494TRPBF has slightly higher RDS(on) (44 mΩ vs. 38 mΩ) but lower Qgd (13 nC vs. 15 nC), offering better switching efficiency at high frequencies despite marginally higher conduction loss at full load.
IRF7494TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 150 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 44mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 53 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1783 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7494TRPBF FAQ
1.How can I place an order for IRF7494TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7494TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7494TRPBF reliable?
The price and inventory of IRF7494TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7494TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7494TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7494TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7494TRPBF?
IRF7494TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7494TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7494TRPBF?
For technical support, including IRF7494TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7494TRPBF requirements.
6.How does Aetrix verify that IRF7494TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7494TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7494TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7494TRPBF?
All IRF7494TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7494TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7494TRPBF part is unused and in its original packaging.
Return procedure for IRF7494TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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