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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7495PBF

Name: IRF7495PBF
Brand: Infineon Technologies
SKU: IRF7495PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7495PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7495PBF.pdf

Description:: MOSFET N-CH 100V 7.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7495PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 7.3A N-channel enhancement-mode HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 22 mΩ R_DS(on) at V_GS = 10 V, low 11.7 nC Q_gd, and fully characterized C_oss,eff = 240 pF to minimize switching loss and simplify snubberless design.

For engineers reviewing the IRF7495PBF datasheet, IRF7495PBF pinout, IRF7495PBF application, or IRF7495PBF equivalent, key selection criteria include its low gate-to-drain charge for ZVS/ZCS topologies, avalanche-rated ruggedness (E_AS = 330 mJ), and SO-8 thermal performance with R_θJA = 50 °C/W on standard PCB mount.

Technical Context

This MOSFET employs planar silicon process with integrated body diode and is specified for hard-switched and resonant converter stages where fast turn-off (t_f = 36 ns) and controlled dv/dt (peak 100 V/ns) are critical. Its 18–22 mΩ R_DS(on) range and 0.10 V/°C V(BR)_DSS tempco support stable operation across –55°C to +150°C junction temperatures.

The device's dynamic parameters-including 34–51 nC total gate charge, 6.3 nC Q_gs, and 11.7 nC Q_gd-are measured under standardized 10 V drive and 25°C conditions, enabling accurate gate driver sizing. C_iss/C_oss/C_rss values (1530/250/110 pF) are characterized at 1 MHz and V_DS = 0–80 V, supporting precise EMI and loop stability analysis.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage for primary-side switch in 48 V input DC-DC or PoE PSE applications
R_DS(on) max	22 mΩ @ V_GS = 10 V - Enables ≤1.2 W conduction loss at 7.3 A continuous current
I_D cont @ 25°C	7.3 A - Supports >50 W power stage output with margin on 1-in² copper PCB
Q_gd	11.7 nC - Low Miller charge reduces susceptibility to false turn-on in high-dv/dt environments
C_oss,eff	240 pF - Fixed effective capacitance used to calculate actual energy loss during V_DS rise time
E_AS	330 mJ - Single-pulse avalanche rating allows safe unclamped inductive switching up to I_AS = 4.4 A
t_f	36 ns - Fast fall time supports >500 kHz switching without excessive dead-time penalty

Pinout & Package

IRF7495PBF is housed in a standard SO-8 surface-mount package per JEDEC MS-012AA, with exposed drain pads thermally connected to pins 1–4 and 6–8. The package provides 20 °C/W junction-to-drain thermal resistance and supports reflow soldering per IPC/JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1–4, 6–8	Drain (D)	Parallel-connected high-current output path; electrically and thermally tied to internal die backside
5	Gate (G)	Control terminal requiring <12 V drive; sensitive to ESD (±20 V absolute max)
7–8 (shared)	Source (S)	Return path for load current; also connects to body diode anode and gate driver reference

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	34% - Improves noise immunity and enables tighter PWM control in synchronous buck converters
Fully characterized C_oss,eff	240 pF - Eliminates iterative capacitor modeling for soft-switching timing calculations
Avalanche-rated	E_AS = 330 mJ - Permits robust operation in flyback or LLC transient overloads without external clamping
Lead-free (PbF)	RoHS-compliant finish - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for standard SMT assembly

Applications

Server VRM Phase-Shift Buck

Industrial PoE PSE Switch

Use Scenario: High-efficiency 48 V–12 V conversion delivering up to 80 A per phase in multi-phase CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side position with 500–750 kHz switching frequency and 10 V gate drive.

Use Value: 22 mΩ R_DS(on) and 36 ns t_f reduce both conduction and switching losses, improving full-load efficiency by ≥0.8% vs. legacy 30 mΩ parts.

Use Scenario: IEEE 802.3at Type 2 (30 W) Power Sourcing Equipment implementing four-port midspan injectors.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward topology with 250 kHz fixed frequency and current-limit protection.

Use Value: 330 mJ E_AS withstands cable fault transients; SO-8 footprint enables compact 12 mm × 12 mm per-port layout.

Automotive ADAS Camera Power

Medical Ultrasound Transmit Stage

Use Scenario: 12 V–5 V point-of-load supply for CMOS image sensor and ISP in rear-view camera modules.

IC Role / Device Role / Timing Role: Low-noise buck converter switch operating in forced PWM mode with <10 µV ripple requirement.

Use Value: Low 11.7 nC Q_gd minimizes dv/dt-induced coupling into analog video lines; R_θJA = 50 °C/W ensures <75°C case temp at 3.5 A.

Use Scenario: High-voltage pulsed excitation driver (up to 100 V, 5 A) for piezoelectric transducer arrays.

IC Role / Device Role / Timing Role: Fast-switching half-bridge high-side element with 100 ns pulse width and 10 kHz repetition rate.

Use Value: 100 V V_DSS and 36 ns t_f enable clean 100 ns edge transitions; body diode t_rr = 42 ns prevents ringback distortion.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP7NK100ZFP	100 V, 7.5 A, R_DS(on) = 250 mΩ - 10× higher on-resistance, TO-220FP package	Lower frequency (<100 kHz), higher thermal mass required; unsuitable for high-density DC-DC	Only viable if board space and thermal budget allow larger footprint and lower efficiency
SiHFL110	100 V, 7.2 A, R_DS(on) = 20 mΩ, Q_gd = 10.5 nC - Slightly better switching but no C_oss,eff characterization	Same SO-8 footprint; requires additional C_oss modeling effort for resonant designs	Preferred for hard-switched SMPS where lowest R_DS(on) dominates; IRF7495PBF remains superior for ZVS/ZCS

Compared with STP7NK100ZFP and SiHFL110, IRF7495PBF uniquely combines low Q_gd, published C_oss,eff, and SO-8 thermal performance-making it the only option qualified for high-frequency, snubberless DC-DC converters demanding <500 ns switching transitions.

Availability

IRF7495PBF is available at Aetrix Electronics and suitable for server VRMs, industrial PoE PSE systems, automotive ADAS camera power supplies, and medical ultrasound transmit stages requiring stable component supply and long-term manufacturability.

Supply support for IRF7495PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7495PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in space-constrained applications where thermal performance and switching fidelity are critical.

FAQ

What is the maximum recommended gate drive voltage for IRF7495PBF?

The absolute maximum V_GS is ±20 V, but the device is fully characterized and optimized for 10 V drive. Operation above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress risk. For reliable long-term performance, 10 V is the recommended nominal gate drive voltage.

Does IRF7495PBF have a built-in body diode, and what are its recovery characteristics?

Yes, IRF7495PBF integrates a monolithic p-n junction body diode with t_rr = 42 ns and Q_rr = 73 nC at T_J = 25°C, I_F = 4.4 A. This fast, soft-recovery diode supports synchronous rectification and bidirectional current flow in half-bridge configurations without external diode supplementation.

Can IRF7495PBF be used in linear (analog) regulator applications?

No-it is not rated or characterized for linear-mode operation. Its Safe Operating Area (SOA) curve shows limited DC capability (≤0.5 A at 100 V), and thermal runaway risk is high due to positive R_DS(on) temperature coefficient. It is strictly intended for switched-mode applications with defined duty cycle and pulse width limits.

Is IRF7495PBF compliant with AEC-Q101 for automotive use?

No-IRF7495PBF was qualified for consumer-grade reliability per manufacturer documentation and is not AEC-Q101 certified. While its –55°C to +150°C operating range meets automotive ambient requirements, it lacks the accelerated life testing, failure analysis, and traceability mandated for automotive safety-critical systems.

IRF7495PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 4.4A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7495PBF FAQ

1.How can I place an order for IRF7495PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7495PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7495PBF reliable?

The price and inventory of IRF7495PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7495PBF is usually 5 days.

3.What payment methods are accepted for IRF7495PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7495PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7495PBF?

IRF7495PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7495PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7495PBF?

For technical support, including IRF7495PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7495PBF requirements.

6.How does Aetrix verify that IRF7495PBF is sourced from the original manufacturer or authorized distributors?

All IRF7495PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7495PBF meets industry standards.

7.What is the process for return or replacement of IRF7495PBF?

All IRF7495PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7495PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7495PBF part is unused and in its original packaging.

Return procedure for IRF7495PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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