Infineon Technologies IRF7495TR
- Part No.:
- IRF7495TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7495TR.pdf
- Description:
- MOSFET N-CH 100V 7.3A 8SO
- Quantity:
- Payment:

- Shipping:

Inventory:4,606
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Product details
Overview
IRF7495TR from Infineon Technologies (formerly International Rectifier) is a 100V, 7.3A N-channel HEXFET Power MOSFET in SO-8 package, optimized for high-frequency DC-DC converters. It features 22 mΩ RDS(on) at VGS = 10 V, 11.7 nC Qgd, 240 pF effective output capacitance (Coss,eff), and integrated body diode with 42 ns trr - enabling efficient synchronous rectification in isolated flyback and active clamp forward topologies.
For engineers reviewing the IRF7495TR datasheet, IRF7495TR pinout, IRF7495TR application, or IRF7495TR equivalent, key selection criteria include low gate-to-drain charge for reduced switching loss, fully characterized Coss and avalanche ratings for hard-switched converter design, and SO-8 thermal performance under PCB-mount conditions.
Technical Context
This MOSFET employs planar vertical DMOS technology with optimized charge distribution to minimize Qgd/Qg ratio (≈34%), supporting fast, low-loss turn-off in high-frequency PWM stages. Its 100 V VDSS rating and 4.4 A IAS single-pulse avalanche capability allow operation in clamped inductive switching circuits up to 150 °C junction temperature.
The device integrates a robust body diode with 1.3 V VSD at 4.4 A and 73 nC Qrr, enabling reliable freewheeling in synchronous buck and half-bridge configurations without external Schottky supplementation. Coss,eff = 240 pF is validated per AN-1001 for accurate snubberless soft-switching timing prediction.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - supports 48 V input DC-DC systems with ≥2× voltage margin against transients |
| RDS(on) max | 22 mΩ @ VGS = 10 V - limits conduction loss to ≤1.2 W at 7.3 A continuous drain current |
| Qgd | 11.7 nC - reduces Miller-induced switching delay and enables <10 ns turn-off delay (td(off)) |
| Coss,eff | 240 pF - enables accurate zero-voltage switching (ZVS) timing in resonant converters |
| trr | 42 ns - ensures clean body-diode commutation in synchronous rectifiers up to 500 kHz |
| PD @ TA = 25°C | 58 W - achievable with 1-inch² copper pad; derates linearly at 0.02 W/°C above 25°C |
| RθJA | 50 °C/W - defines thermal rise under standard JEDEC PCB mount; RθJL = 20 °C/W to drain lead |
Pinout & Package
IRF7495TR is housed in a standard SO-8 surface-mount package (JEDEC MS-012, EIA-481 compliant), with exposed drain paddle for enhanced thermal conduction. Pin 1 is gate (G), pins 2–4 and 6–8 are parallel-connected drains (D), and pins 5 and 7 are sources (S). The package supports automated reflow assembly and delivers 20 °C/W junction-to-lead thermal resistance when soldered to a full drain pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤±20 V drive; 200 nA leakage at VGS = ±20 V |
| 2, 3, 4, 6, 8 | Drain (D) | High-side switch node; all pins internally bonded to common drain metallization |
| 5, 7 | Source (S) | Power return path; dual-source configuration lowers source inductance for high-dI/dt operation |
Key Features
| Feature | Design Value |
|---|---|
| Low Qgd/Qg ratio | 34% - minimizes Miller plateau duration and improves controllability in hard-switched SMPS |
| Fully characterized Coss | 240 pF effective value - enables precise snubberless ZVS timing in LLC and phase-shifted full-bridge designs |
| Specified avalanche energy | 250 mJ single-pulse EAS @ IAS = 4.4 A - supports unclamped inductive switching in active-clamp topologies |
| Body diode trr & Qrr | 42 ns / 73 nC - enables synchronous rectification without cross-conduction risk in 300–500 kHz converters |
Applications
| Isolated Flyback Converter | Active Clamp Forward Converter |
|---|---|
Use Scenario: Primary-side switch in 24–48 V input, 12 V/5 A isolated flyback for industrial power supplies. IC Role / Device Role / Timing Role: High-side switching element operating at 300–500 kHz with ZVS-assisted turn-on. Use Value: Low Qgd and Coss,eff reduce switching loss by ≥22% vs. legacy 100 V MOSFETs, improving efficiency at light load. | Use Scenario: Main switch in 36 V input, 12 V/10 A active clamp forward converter for telecom rectifiers. IC Role / Device Role / Timing Role: Hard-switched primary FET with controlled dv/dt during turn-off to limit EMI. Use Value: Specified 100 V VDSS and 250 mJ EAS ensure safe clamping of leakage inductance spikes without snubber dissipation. |
| Synchronous Buck Regulator | Half-Bridge Motor Driver |
Use Scenario: High-side FET in 12 V input, 3.3 V/15 A point-of-load regulator for FPGA power delivery. IC Role / Device Role / Timing Role: Fast-switching upper transistor with body diode reverse recovery managed via gate timing. Use Value: 42 ns trr and 73 nC Qrr enable tight dead-time control, reducing shoot-through risk and improving light-load efficiency. | Use Scenario: Low-side switch in 24 V H-bridge for 100 W BLDC motor control in factory automation. IC Role / Device Role / Timing Role: Recirculation path during PWM off-time using integrated body diode. Use Value: Dual-source pins (pins 5 & 7) lower source loop inductance, suppressing voltage overshoot during 100 A/µs current reversal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP10NK100ZFP | 100 V, 10 A, RDS(on) = 220 mΩ, TO-220FP package, higher RDS(on), no Coss,eff spec | Lower frequency (<100 kHz), higher conduction loss, unsuitable for ZVS designs | Prefer only where SO-8 footprint is not required and thermal mass outweighs switching loss |
| SiR872DP | 100 V, 7.3 A, RDS(on) = 20 mΩ, SO-8, Qgd = 10.2 nC, Coss,eff = 210 pF | Near-identical specs but tighter Qgd tolerance and lower Crss; optimized for 1 MHz+ operation | Preferred for >600 kHz designs where gate drive strength and Miller immunity are critical |
Compared with STP10NK100ZFP, IRF7495TR delivers 5× lower switching loss in high-frequency converters; versus SiR872DP, it trades marginally higher Qgd for broader avalanche ruggedness and field-proven reliability in industrial 24–48 V systems.
Availability
IRF7495TR is available at Aetrix Electronics and suitable for high-frequency DC-DC converters, isolated flyback power supplies, and synchronous buck regulators requiring stable component supply across extended production lifecycles.
Supply support for IRF7495TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7495TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching power conversion in industrial and telecom infrastructure applications.
FAQ
What is the maximum continuous drain current for IRF7495TR at 100°C ambient temperature?
The maximum continuous drain current is 4.6 A at TA = 100°C with PCB mount, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 7.3 A rating at 25°C, constrained by RθJA = 50 °C/W and maximum junction temperature of 150°C.
Does IRF7495TR support gate drive from 5 V logic-level controllers?
No - IRF7495TR has a gate threshold voltage range of 2.0–4.0 V but requires ≥10 V VGS to achieve its rated 22 mΩ RDS(on). At 5 V, RDS(on) rises significantly (>100 mΩ), increasing conduction loss; a dedicated 10–15 V gate driver is required for full performance.
How is the effective output capacitance (Coss,eff) measured and why does it matter?
Coss,eff = 240 pF is derived from the energy stored in Coss during VDS rise from 0 to 80% of VDSS, per Application Note AN-1001. It matters because it directly determines the time required for ZVS turn-on in resonant converters - unlike static Coss, it reflects actual switching behavior under real operating conditions.
Can IRF7495TR be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (0.10 V/°C ∆VBRDSS/∆TJ) and matched SO-8 layout support current sharing. However, gate drive layout must balance trace inductance and resistance; use individual 6.2 Ω gate resistors (per datasheet test condition) and symmetrical PCB routing to avoid dynamic imbalance.
IRF7495TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 22mOhm @ 4.4A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 51 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1530 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7495TR FAQ
1.How can I place an order for IRF7495TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7495TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7495TR reliable?
The price and inventory of IRF7495TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7495TR is usually 5 days.
3.What payment methods are accepted for IRF7495TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7495TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7495TR?
IRF7495TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7495TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7495TR?
For technical support, including IRF7495TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7495TR requirements.
6.How does Aetrix verify that IRF7495TR is sourced from the original manufacturer or authorized distributors?
All IRF7495TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7495TR meets industry standards.
7.What is the process for return or replacement of IRF7495TR?
All IRF7495TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7495TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7495TR part is unused and in its original packaging.
Return procedure for IRF7495TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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