My Inquiry
My Account
Infineon Technologies IRF7523D1TRPBF
- Part No.:
- IRF7523D1TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7523D1TRPBF.pdf
- Description:
- MOSFET N-CH 30V 2.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:5,234
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7523D1TRPBF from Infineon Technologies is a co-packaged N-channel HEXFET Power MOSFET and low-forward-voltage Schottky diode in a single Micro8 package, rated for 30 V V(BR)DSS, 0.090 Ω RDS(on) at VGS = 10 V / ID = 1.7 A, and 0.39 V Schottky VF. It serves as a synchronous rectifier or high-efficiency switching element in DC-DC converters for portable electronics.
For engineers reviewing the IRF7523D1TRPBF datasheet, IRF7523D1TRPBF pinout, IRF7523D1TRPBF application, or IRF7523D1TRPBF equivalent, key selection criteria include its dual-device integration, 0.39 V Schottky forward voltage, 0.090 Ω on-resistance at 10 V gate drive, thermal resistance of 100 °C/W, and Micro8 footprint compatibility with space-constrained PCB layouts.
Technical Context
This FETKY device integrates a Generation 5 HEXFET MOSFET and a low-VF Schottky diode in monolithic co-packaging to eliminate parasitic inductance between switch and rectifier, enabling faster switching and reduced body-diode conduction loss. Its 0.39 V Schottky VF and 40–60 ns trr support high-frequency synchronous rectification.
The Micro8 package delivers half the footprint area of SO-8 while maintaining SOIC-compatible soldering and layout practices. Thermal performance is defined by RθJA = 100 °C/W on a 1-inch² copper board, with junction temperature rated from –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 30 V - maximum drain-source blocking voltage before avalanche; sets upper limit for input/output rail voltage in buck/boost stages |
| RDS(on) | 0.090 Ω @ VGS = 10 V, ID = 1.7 A - determines I²R conduction loss in high-current paths; enables <125 mW loss at 1.25 A |
| Schottky VF | 0.39 V - fixed forward drop independent of current; reduces rectifier loss vs. silicon diodes, especially below 1 A |
| trr | 40–60 ns - fast reverse recovery supports >1 MHz switching without hard-switching penalty or ringing |
| Qg | 7.8–12 nC - total gate charge impacts driver strength requirement and switching transition time |
| RθJA | 100 °C/W - thermal resistance on 1-inch² copper board; defines power derating slope (10 W/°C) above 70 °C ambient |
| ID (continuous) | 2.7 A @ TA = 25 °C - usable continuous current under standard board cooling; limited to 2.1 A at 70 °C ambient |
Pinout & Package
Package: Micro8 (SOIC-8 outline, 3.0 × 3.0 mm footprint, <1.1 mm profile), lead-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (MOSFET) | Common high-current output node shared with Schottky cathode; requires wide copper pour for thermal and current handling |
| 5 | Gate | Control terminal for MOSFET; driven by PWM controller; sensitive to ESD and dv/dt-induced turn-on |
| 6 | Source (MOSFET) | Reference node for gate drive and current sensing; tied to Schottky anode |
| 7, 8 | Anode (Schottky) | Connected internally to MOSFET source; forms synchronous rectifier return path; must be routed with low inductance |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged MOSFET + Schottky | Eliminates interconnect inductance between switch and rectifier, reducing voltage overshoot and EMI in high-dI/dt applications |
| Generation 5 HEXFET technology | Enables 0.090 Ω RDS(on) in Micro8 footprint-40% lower on-resistance than prior-gen equivalents at same size |
| Low-profile Micro8 package | 3.0 × 3.0 mm footprint and <1.1 mm height enable use in ultra-thin devices including PCMCIA cards and slim smartphones |
| Low Schottky VF (0.39 V) | Reduces forward conduction loss by ~50% vs. 0.7 V silicon diodes at 0.5 A, improving light-load efficiency in portable DC-DC converters |
Applications
| Smartphone DC-DC Converters | USB-C Power Delivery Modules |
|---|---|
Use Scenario: Step-down conversion from 9 V/12 V USB-PD input to 3.3 V/1.8 V core rails in compact smartphone PMIC subsystems. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter secondary side; replaces external Schottky + MOSFET pair. Use Value: 0.39 V Schottky VF and 0.090 Ω RDS(on) jointly reduce conduction loss by ≥35% vs. discrete solutions, extending battery runtime. | Use Scenario: High-efficiency 5–20 V to 5 V buck conversion in portable USB-C chargers and power banks. IC Role / Device Role / Timing Role: Integrated switch-rectifier in primary-side synchronous rectification stage; operates at 500 kHz–1 MHz. Use Value: 40–60 ns trr and low Qg (7.8–12 nC) enable clean zero-voltage switching transitions, minimizing switching loss and EMI. |
| Wearable Device PMUs | IoT Sensor Node Power Supplies |
Use Scenario: Ultra-low-power 3.7 V Li-ion battery to 1.2 V/1.8 V regulation in hearables and smartwatches. IC Role / Device Role / Timing Role: Low-quiescent, high-efficiency buck converter output stage; leverages low RDS(on) and VF for sub-100 µA quiescent operation. Use Value: Micro8's 3.0 × 3.0 mm footprint saves >60% board area vs. SO-8, critical for <100 mm² wearable PCBs. | Use Scenario: Energy-harvesting or coin-cell-powered sensor nodes requiring >90% efficiency at 10–100 mA load. IC Role / Device Role / Timing Role: Primary switching element in boost/buck-boost regulators; benefits from low gate charge and fast diode recovery. Use Value: 100 °C/W RθJA allows full 2.7 A rating with minimal heatsinking-enabling passive thermal design in sealed enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar co-packaged MOSFET + Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | 30 V, 0.085 Ω RDS(on), 0.42 V Schottky VF, PowerPAK® 1212-8 package (3.2 × 3.2 mm) | Higher VF increases light-load loss; larger footprint limits ultra-thin designs | Preferred when higher peak current (3.5 A) is required and board space permits |
| DMN3025LSD-13 | 30 V, 0.025 Ω RDS(on), no integrated Schottky; dual-N MOSFET only in SO-8 | Requires external Schottky; adds layout complexity and inductance | Chosen when lowest conduction loss dominates and discrete rectifier integration is acceptable |
Compared with Si7851DP-T1-GE3 and DMN3025LSD-13, IRF7523D1TRPBF uniquely balances ultra-compact Micro8 footprint, low VF Schottky integration, and verified 2.7 A continuous capability-making it optimal for space- and efficiency-critical portable DC-DC stages where co-packaging eliminates layout trade-offs.
Availability
IRF7523D1TRPBF is available at Aetrix Electronics and suitable for smartphone DC-DC converters, USB-C power delivery modules, and wearable device PMUs requiring stable component supply across production ramps and long-lifecycle programs.
Supply support for IRF7523D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with leadership in silicon and wide-bandgap power devices.
The FETKY product line was designed specifically for high-density, high-efficiency DC-DC conversion in portable electronics-integrating optimized MOSFETs and Schottky diodes to eliminate layout compromises in space-constrained buck and boost topologies.
FAQ
Is IRF7523D1TRPBF pin-compatible with standard SO-8 MOSFETs?
No. IRF7523D1TRPBF uses the Micro8 footprint (3.0 × 3.0 mm), which is physically smaller than SO-8 (4.9 × 6.0 mm) and has different pin assignments-specifically pins 1–4 are common drain, pin 5 is gate, pin 6 is MOSFET source/Schottky anode, and pins 7–8 are Schottky anode. Layout redesign is required.
Can IRF7523D1TRPBF replace a discrete MOSFET + Schottky diode pair in existing designs?
Yes, but only if the PCB layout accommodates the Micro8 footprint and the pinout mapping matches the functional connections (common drain, gate, source/anode). The integrated structure reduces parasitic inductance and improves efficiency, but requires verification of gate drive timing and thermal margin due to tighter coupling.
What is the maximum recommended switching frequency for IRF7523D1TRPBF?
Based on its 40–60 ns trr, 7.8–12 nC Qg, and low Crss (32 pF), IRF7523D1TRPBF is validated for reliable operation up to 1.5 MHz in synchronous buck converters. Efficiency peaks between 500 kHz and 1 MHz, where switching and conduction losses are optimally balanced.
Does the Schottky diode in IRF7523D1TRPBF conduct during MOSFET turn-off transitions?
Yes-the internal Schottky conducts during the MOSFET's off-state and during dead-time intervals in synchronous rectification. Its 0.39 V VF and 40–60 ns trr ensure low-loss, low-noise freewheeling without reverse recovery spikes, directly improving converter stability and EMI performance.
IRF7523D1TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 1.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 12 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 210 pF @ 25 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.25W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7523D1TRPBF FAQ
1.How can I place an order for IRF7523D1TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7523D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7523D1TRPBF reliable?
The price and inventory of IRF7523D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7523D1TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7523D1TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7523D1TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7523D1TRPBF?
IRF7523D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7523D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7523D1TRPBF?
For technical support, including IRF7523D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7523D1TRPBF requirements.
6.How does Aetrix verify that IRF7523D1TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7523D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7523D1TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7523D1TRPBF?
All IRF7523D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7523D1TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7523D1TRPBF part is unused and in its original packaging.
Return procedure for IRF7523D1TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7523D1TRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
