Infineon Technologies IRF7524D1GTRPBF

Overview

IRF7524D1GTRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET Power MOSFET and low-forward-voltage Schottky diode in a single Micro8 surface-mount package. It delivers V_DSS = −20 V, R_DS(on) = 0.27 Ω @ V_GS = −4.5 V, and Schottky V_F = 0.39 V @ I_F = 1.0 A, TJ = 125°C - optimized for synchronous rectification and high-efficiency DC-DC conversion in portable electronics.

For engineers reviewing the IRF7524D1GTRPBF datasheet, IRF7524D1GTRPBF pinout, IRF7524D1GTRPBF application, or IRF7524D1GTRPBF equivalent, key selection criteria include its integrated FET+Schottky topology, Micro8 footprint space savings, −20 V breakdown rating, 0.27 Ω on-resistance at −4.5 V gate drive, and body diode reverse recovery time of 52–78 ns.

Technical Context

This dual-die Micro8 device integrates a Generation 5 P-channel MOSFET with a low-V_F Schottky rectifier sharing source and drain terminals - enabling self-synchronous rectification without external timing control. The MOSFET exhibits gate threshold voltage V_GS(th) = −0.70 V and total gate charge Q_g = 5.4 nC (typ), supporting fast switching at up to 100 A/µs di/dt.

The Schottky diode provides V_F = 0.39 V @ 1.0 A, 125°C and reverse leakage I_R = 8 µA @ 20 V, 125°C, with junction capacitance C_t = 92 pF @ 5 V. Thermal resistance R_θJA = 100 °C/W on 1-inch² copper board enables 1.25 W continuous dissipation at 25°C ambient.

Key Specifications

Pinout & Package

IRF7524D1GTRPBF uses the Micro8 surface-mount package (JEDEC MO-229, EIA-481 compliant), measuring 7.9 mm × 6.0 mm × <1.1 mm, with gull-wing leads and exposed thermal pad on bottom. Pin numbering follows top-view orientation: Pin 1 = Source, Pins 2–3 = Gate, Pins 4–5 = Drain, Pins 6–7 = Cathode, Pin 8 = Anode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar integrated FET+Schottky rectifier applications.

Compared with Si7851DP-T1-GE3 and IRF7759MTRPBF, IRF7524D1GTRPBF uniquely combines P-MOSFET and Schottky in one Micro8 package - delivering lowest system-level BOM count, smallest PCB area, and guaranteed matched thermal behavior between switching and rectification elements.

Availability

IRF7524D1GTRPBF is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD adapters, wireless headset charging circuits, and portable SSD power rails requiring stable component supply and long-term production continuity.

Supply support for IRF7524D1GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's FETKY™ family - engineered specifically for space-constrained, high-efficiency DC-DC converters in battery-powered consumer electronics where board area and thermal performance are critical constraints.

FAQ

What is the maximum continuous drain current for IRF7524D1GTRPBF at 70°C ambient?

The maximum continuous drain current is −1.4 A at T_A = 70°C, derated from −1.7 A at 25°C using the linear derating factor of 10 mW/°C. This rating assumes mounting on a 1-inch² copper board with R_θJA = 100 °C/W and junction temperature limited to 150°C.

Can IRF7524D1GTRPBF be used in synchronous rectifier configurations without external timing control?

Yes - its integrated Schottky diode provides inherent self-synchronous rectification capability. When used as the low-side switch in a buck converter, the Schottky conducts during MOSFET off-time, eliminating need for external gate timing or controller-based synchronous signals.

Is the Micro8 package thermally enhanced compared to standard SO-8?

No - the Micro8 package has identical thermal resistance R_θJA = 100 °C/W on 1-inch² copper board as specified in the datasheet. However, its smaller footprint concentrates heat in a tighter area, requiring careful PCB copper pour design beneath the exposed thermal pad for optimal performance.

What is the typical reverse recovery charge (Q_rr) of the integrated Schottky diode?

The typical reverse recovery charge is 63 nC, measured at T_J = 25°C, I_F = −1.2 A, and di/dt = 100 A/µs. This value is significantly lower than conventional silicon body diodes, reducing switching losses and EMI in high-frequency DC-DC converters.