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Infineon Technologies IRF7524D1PBF
- Part No.:
- IRF7524D1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7524D1PBF.pdf
- Description:
- MOSFET P-CH 20V 1.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:4,553
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Product details
Overview
IRF7524D1PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET® Power MOSFET and low-forward-voltage Schottky diode in a single Micro8 package. It delivers VDSS = –20 V, RDS(on) = 0.27 Ω @ VGS = –4.5 V, and Schottky VF = 0.39 V @ IF = 1.0 A, TJ = 125°C - enabling compact, high-efficiency synchronous rectification in portable DC-DC converters.
For engineers reviewing the IRF7524D1PBF datasheet, IRF7524D1PBF pinout, IRF7524D1PBF application, or IRF7524D1PBF equivalent, key selection criteria include its integrated FET+Schottky topology, Micro8 footprint (50% smaller than SO-8), –20 V breakdown rating, 0.27 Ω on-resistance at –4.5 V gate drive, and suitability for space-constrained battery-powered systems requiring low conduction loss and fast switching.
Technical Context
This dual-die Micro8 device integrates a Generation 5 P-channel MOSFET with an optimized low-VF Schottky diode on a common leadframe. The MOSFET features enhanced channel density for low RDS(on), while the Schottky diode provides <1.2 V forward drop and 52 ns typical reverse recovery time - eliminating minority-carrier delay and reducing switching losses in buck converter synchronous rectifiers.
The co-packaging enables precise thermal coupling between devices, supporting coordinated operation under pulsed loads up to –14 A (IDM) and ensuring stable body-diode conduction during dead-time intervals. Its –55°C to +150°C junction temperature range and 100°C/W θJA (1-inch² copper board) support reliable operation in thermally constrained handheld electronics environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | –20 V: Maximum drain-to-source blocking voltage for low-voltage input rails (e.g., 3.3 V, 5 V, 12 V systems) |
| RDS(on) | 0.27 Ω @ VGS = –4.5 V: Enables ≤320 mW conduction loss at –1.2 A continuous drain current |
| Schottky VF | 0.39 V @ IF = 1.0 A, TJ = 125°C: Reduces forward power dissipation vs. standard silicon diodes in high-frequency rectification |
| Qg | 5.4 nC typ.: Supports efficient gate driving with low controller output current requirements |
| trr | 52 ns typ.: Eliminates reverse recovery tail current, minimizing switching loss and EMI in synchronous buck stages |
| Package | Micro8: 3.05 mm × 4.24 mm footprint, <1.1 mm height - fits PCMCIA cards and ultra-thin mobile PCBs |
Pinout & Package
IRF7524D1PBF uses the Micro8 surface-mount package (JEDEC MO-229 variant), with 8 leads arranged in two rows of four. The package has a 0.65 mm pitch, 3.05 mm width, and 4.24 mm length, and is lead-free per RoHS.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (MOSFET) | Common drain connection for both MOSFET and Schottky cathode - forms high-side switch node in buck topologies |
| 5, 6 | Source (MOSFET) | MOSFET source terminal; tied internally to Schottky anode - serves as output/switching node in synchronous rectifier configuration |
| 7 | Gate (MOSFET) | Control input for P-channel MOSFET; requires negative gate drive relative to source for turn-on |
| 8 | Source (Schottky) | Independent Schottky anode connection - allows external use of diode without MOSFET activation (e.g., asynchronous fallback) |
Key Features
| Feature | Design Value |
|---|---|
| Integrated FET + Schottky | Single-component replacement for discrete MOSFET + diode pair - reduces BOM count and layout area by >40% |
| Generation 5 HEXFET | 0.27 Ω RDS(on) at –4.5 V gate drive - enables efficient operation with standard logic-level controllers |
| Low-profile Micro8 | Height <1.1 mm - clears tight mechanical envelopes in smartphones, wearables, and ultrabooks |
| Thermally coupled die | Shared thermal path ensures matched junction temperature rise - improves reliability under transient load conditions |
Applications
| Smartphone Power Management | USB-C PD Buck Converter |
|---|---|
Use Scenario: Step-down conversion from 9 V/15 V USB-C PD input to 3.3 V system rail in smartphone PMIC secondary stage. IC Role / Device Role / Timing Role: Synchronous rectifier switch in high-frequency (1–3 MHz) buck converter; replaces external Schottky diode and P-MOSFET. Use Value: 0.39 V Schottky VF and 0.27 Ω RDS(on) reduce conduction loss by 35% vs. discrete solutions, extending battery runtime. | Use Scenario: Secondary-side synchronous rectification in 20 W USB-C PD adapter with 5 V/3 A output. IC Role / Device Role / Timing Role: Low-side synchronous rectifier in isolated flyback or non-isolated buck topology; driven by dedicated gate driver IC. Use Value: 52 ns trr and absence of minority-carrier storage enable clean zero-voltage switching transitions, lowering EMI and improving efficiency above 92%. |
| Portable SSD Power Rail | Wireless Earbud Charging Case |
Use Scenario: 5 V to 1.8 V point-of-load regulation for NAND flash memory in M.2 NVMe SSD modules. IC Role / Device Role / Timing Role: High-side P-channel switch in buck converter; leverages integrated Schottky for body-diode conduction during dead time. Use Value: Micro8 footprint (3.05 × 4.24 mm) saves >1.2 mm² board area vs. SO-8 equivalents - critical for dense SSD PCB stacking. | Use Scenario: 5 V to 4.2 V linear/buck charging circuit for Li-ion battery in compact earbud charging case. IC Role / Device Role / Timing Role: Reverse-polarity protection and synchronous rectifier in bidirectional charge/discharge path. Use Value: –20 V VDSS and –14 A pulsed rating support robust surge handling during hot-plug events, while 0.27 Ω RDS(on) minimizes heat generation in sealed enclosure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar co-packaged P-channel MOSFET + Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | VDSS = –20 V, RDS(on) = 0.32 Ω @ –4.5 V, Schottky VF = 0.42 V @ 1 A | Higher RDS(on) and VF increase conduction loss by ~18% at 1.2 A | Preferred when higher avalanche ruggedness (EAS = 22 mJ) is required over minimal loss |
| DMN2011UFD-7 | VDSS = –20 V, RDS(on) = 0.22 Ω @ –4.5 V, no integrated Schottky | Requires external Schottky diode - increases component count and layout complexity | Chosen when independent control of diode conduction timing is needed for advanced ZVS schemes |
Compared with Si7851DP-T1-GE3 and DMN2011UFD-7, IRF7524D1PBF uniquely combines lowest RDS(on) among co-packaged alternatives and factory-matched thermal coupling - delivering optimal efficiency in space-limited, thermally sensitive portable applications without design trade-offs.
Availability
IRF7524D1PBF is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD buck converters, portable SSD power rails, and wireless earbud charging cases requiring stable component supply and long-term production continuity.
Supply support for IRF7524D1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to Infineon's FETKY™ family of integrated MOSFET + Schottky diode solutions, designed specifically for high-density, high-efficiency DC-DC conversion in battery-powered consumer electronics where board space and thermal performance are critical constraints.
FAQ
What is the maximum continuous drain current for IRF7524D1PBF at 70°C ambient?
The maximum continuous drain current is –1.4 A at TA = 70°C, derated from –1.7 A at 25°C using the specified 10 mW/°C linear derating factor. This rating assumes mounting on a 1-inch² copper board and accounts for thermal resistance of 100°C/W (junction-to-ambient).
Can the integrated Schottky diode be used independently of the MOSFET?
Yes - Pin 8 is the dedicated Schottky anode terminal, electrically isolated from the MOSFET source (Pins 5–6). This allows standalone use as a low-VF rectifier in asynchronous configurations or as a freewheeling diode when the MOSFET is disabled.
Is IRF7524D1PBF suitable for automotive applications?
No - this device is qualified for the Consumer market per Infineon's documentation and lacks AEC-Q101 qualification, extended temperature grade (–40°C to +125°C), or automotive-specific reliability testing. It is not recommended for under-hood or safety-critical vehicle systems.
What is the gate threshold voltage range, and how does it affect drive requirements?
VGS(th) is –0.70 V minimum (typical –1.0 V, max –1.4 V) at ID = –250 µA. This low threshold enables full enhancement with –2.7 V gate drive (RDS(on) = 0.40 Ω), making it compatible with 3.3 V logic-level controllers without level-shifting circuitry.
IRF7524D1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 270mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 8.2 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 240 pF @ 15 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.25W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7524D1PBF FAQ
1.How can I place an order for IRF7524D1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7524D1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7524D1PBF reliable?
The price and inventory of IRF7524D1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7524D1PBF is usually 5 days.
3.What payment methods are accepted for IRF7524D1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7524D1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7524D1PBF?
IRF7524D1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7524D1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7524D1PBF?
For technical support, including IRF7524D1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7524D1PBF requirements.
6.How does Aetrix verify that IRF7524D1PBF is sourced from the original manufacturer or authorized distributors?
All IRF7524D1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7524D1PBF meets industry standards.
7.What is the process for return or replacement of IRF7524D1PBF?
All IRF7524D1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7524D1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7524D1PBF part is unused and in its original packaging.
Return procedure for IRF7524D1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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