Infineon Technologies IRF7524D1TRPBF

Overview

IRF7524D1TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET Power MOSFET and low-forward-voltage Schottky diode in a Micro8 surface-mount package. It delivers V_DSS = –20 V, R_DS(on) = 0.27 Ω @ V_GS = –4.5 V, Schottky V_F = 0.39 V @ I_F = 1.0 A, TJ ≤ 150 °C, and supports pulsed drain current up to –14 A - optimized for synchronous rectification in portable DC-DC converters.

For engineers reviewing the IRF7524D1TRPBF datasheet, IRF7524D1TRPBF pinout, IRF7524D1TRPBF application, or IRF7524D1TRPBF equivalent, key selection criteria include its integrated FET+Schottky topology, Micro8 footprint space savings, low R_DS(on) at –4.5 V gate drive, body diode recovery performance (t_rr = 52–78 ns), and thermal resistance (R_θJA = 100 °C/W on 1-in² copper).

Technical Context

This dual-die Micro8 device integrates a Generation 5 P-channel MOSFET with a low-V_F Schottky diode sharing source and drain terminals. The MOSFET features gate threshold voltage V_GS(th) = –0.70 V, forward transconductance g_fs = 1.3 S, and total gate charge Q_g = 5.4 nC (typ.) - enabling fast switching with moderate gate drive strength. The Schottky diode exhibits V_FM = 0.39 V @ 1.0 A / 125 °C and reverse leakage I_RM = 8 µA @ 20 V / 125 °C.

The co-packaged architecture eliminates PCB routing between switch and freewheeling diode, reducing parasitic inductance and improving efficiency in high-frequency buck converters. Its 1.1 mm max profile and half-SO-8 footprint support ultra-thin applications such as smartphone power management ICs and PCMCIA card regulators where board area and height are constrained.

Key Specifications

Pinout & Package

IRF7524D1TRPBF uses the Micro8 surface-mount package (3.05 × 4.24 mm, 1.1 mm max height), offering ~50% smaller footprint than SO-8 while maintaining compatible lead pitch (0.65 mm). Pin assignments are confirmed per official top-view diagram: pins 1–4 and 5–8 form two mirrored dual-drain configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel FET+Schottky co-packaged applications.

Compared with Si7851DP-T1-GE3 and DMN601WK-7, IRF7524D1TRPBF uniquely combines Micro8 footprint, 0.27 Ω R_DS(on), and 0.39 V Schottky V_F - delivering optimal trade-off of size, efficiency, and integration for portable 1–2 A DC-DC stages.

Availability

IRF7524D1TRPBF is available at Aetrix Electronics and suitable for smartphone PMIC output stages, USB-C PD buck converters, portable SSD power rails, and Bluetooth headset DC-DC modules requiring stable component supply across high-mix, low-volume production runs.

Supply support for IRF7524D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions with over 50 years of power device innovation.

This device belongs to Infineon's FETKY family - engineered specifically for space-constrained, high-efficiency synchronous rectification in portable DC-DC converters operating below 20 V.

FAQ

What is the maximum continuous drain current for IRF7524D1TRPBF at 70°C ambient?

The maximum continuous drain current is –1.4 A at T_A = 70 °C, derated from –1.7 A at 25 °C using the linear derating factor of 10 mW/°C. This rating assumes mounting on a 1-inch square copper board per datasheet thermal test condition.

Can IRF7524D1TRPBF be used in a high-side switch configuration with 3.3 V logic-level gate drive?

Yes - its V_GS(th) = –0.70 V and R_DS(on) = 0.27 Ω @ V_GS = –4.5 V make it compatible with 3.3 V microcontroller outputs driving through an inverting level shifter or dedicated gate driver providing ≥–4.5 V swing.

Does the integrated Schottky diode share the same thermal junction as the MOSFET?

Yes - both dies are co-packaged in a single Micro8 mold compound, resulting in a shared thermal junction. The absolute maximum junction temperature of 150 °C applies to the entire device, and thermal design must account for combined power dissipation from both elements.

Is IRF7524D1TRPBF RoHS-compliant and halogen-free?

Yes - the "PbF" suffix confirms lead-free (RoHS-compliant) construction, and Infineon's official documentation states the Micro8 package meets JEDEC JS709B halogen-free requirements, with chlorine and bromine content <900 ppm each.