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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7526D1PBF

Name: IRF7526D1PBF
Brand: Infineon Technologies
SKU: IRF7526D1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7526D1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: IRF7526D1PBF.pdf

Description:: MOSFET P-CH 30V 2A MICRO8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7526D1PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET Power MOSFET and low-forward-voltage Schottky diode in a single Micro8 surface-mount package. It delivers V_DSS = −30 V, R_DS(on) = 0.20 Ω @ V_GS = −4.5 V, and Schottky V_F = 0.39 V @ I_F = 1.0 A, TJ = 125°C - optimized for synchronous rectification and high-efficiency DC-DC converters in portable electronics.

For engineers reviewing the IRF7526D1PBF datasheet, IRF7526D1PBF pinout, IRF7526D1PBF application, or IRF7526D1PBF equivalent, key selection criteria include its integrated FET+Schottky topology, Micro8 footprint space savings, −30 V blocking capability, 0.20 Ω on-resistance at logic-level gate drive, and body-diode reverse recovery time of 30–45 ns.

Technical Context

This FETKY device integrates a generation-5 P-channel HEXFET with an ultra-low-V_F Schottky rectifier in monolithic co-packaging - not a discrete die-on-die assembly. The MOSFET features enhanced transconductance (g_fs = 0.94 S) and low gate charge (Q_g = 7.5 nC typ), enabling fast switching with reduced driver loss.

The Schottky diode exhibits V_F = 0.39 V @ 1.0 A / 125°C and negligible reverse recovery (t_rr = 30–45 ns), eliminating minority-carrier tail current and minimizing switching losses in high-frequency buck converters operating up to 1 MHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−30 V - supports input rails up to 24 V nominal with margin for transient overshoot in portable power systems
R_DS(on)	0.20 Ω @ V_GS = −4.5 V - enables ≥92% efficiency in 3.3 V output, 1.2 A load synchronous buck stages
Schottky V_F	0.39 V @ I_F = 1.0 A, T_J = 125°C - reduces conduction loss by ~40% vs. standard silicon diodes in same thermal condition
Q_g	7.5 nC typ - allows clean 1 MHz switching with <1 W gate driver dissipation using 5 V logic-level drive
t_rr	30–45 ns - eliminates reverse recovery spikes and EMI in high-dV/dt synchronous rectifier operation
Package	Micro8 - 2.0 × 2.0 mm footprint, half the area of SO-8, enabling ultra-compact PCB layouts for thin-profile devices
T_J max	+150°C - supports continuous operation in thermally constrained handheld enclosures without derating below 1.2 A

Pinout & Package

IRF7526D1PBF uses the Micro8 surface-mount package (2.0 mm × 2.0 mm × 0.95 mm height), with exposed drain pads on pins 4, 5, 6, and 7 for thermal and electrical connection. The package is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (MOSFET)	Common source node for both MOSFET and Schottky cathode; connects to output rail or ground return path
4, 5, 6, 7	Drain (MOSFET) / Anode (Schottky)	Shared high-side switching node; requires low-inductance layout to minimize switching ringing
8	Gate	Logic-level P-channel control input; accepts −4.5 V to −10 V for full enhancement; no external level-shifting needed

Key Features

Feature	Design Value
Integrated FET + Schottky	Eliminates interconnect parasitics between switch and rectifier, reducing layout-induced shoot-through risk and EMI
Generation-5 HEXFET	0.20 Ω R_DS(on) at −4.5 V gate drive enables direct microcontroller GPIO control without gate driver IC
Low-profile Micro8	0.95 mm max height fits within PCMCIA card and smartphone battery compartment mechanical envelopes
125°C-rated Schottky V_F	0.39 V forward drop maintained at elevated temperature ensures stable efficiency across full operating range
Body diode t_rr ≤ 45 ns	Enables reliable zero-voltage switching (ZVS) in resonant topologies without external snubbers

Applications

Smartphone PMIC Buck Converter

USB-C PD Portable Charger

Use Scenario: 3.3 V/1.2 A synchronous buck stage in multi-rail smartphone power management IC.

IC Role / Device Role / Timing Role: Integrated high-side switch + synchronous rectifier replacing dual discrete solution.

Use Value: Reduces board area by 45% vs. SO-8 FET+diode pair while maintaining 93% peak efficiency at 500 kHz switching.

Use Scenario: Secondary-side synchronous rectifier in 20 W USB-C PD adapter with 5 V/3 A output.

IC Role / Device Role / Timing Role: Low-V_F Schottky replaces 40 V Schottky diode; P-MOSFET provides active clamp during dead-time.

Use Value: Cuts diode conduction loss by 320 mW at full load, lowering thermal rise in compact adapter housing.

Bluetooth Headset Battery Charger

Industrial IoT Sensor Node DC-DC

Use Scenario: Single-cell Li-ion charging circuit with integrated 3.3 V LDO bypass and 1.8 V buck converter.

IC Role / Device Role / Timing Role: Dual-function switch for charger path control and regulated output rectification.

Use Value: Enables true single-chip 3.3 V/1.2 A regulator with <1.5 mm² PCB footprint and <0.5°C thermal delta at ambient.

Use Scenario: 3.6 V → 3.3 V step-down for ultra-low-power sensor node powered by coin cell or energy harvester.

IC Role / Device Role / Timing Role: High-efficiency, low-quiescent synchronous rectifier with minimal gate drive overhead.

Use Value: Achieves >89% efficiency at 100 µA load and extends battery life by 18% over discrete Schottky+MOSFET solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged P-channel FET+Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	V_DSS = −30 V, R_DS(on) = 0.22 Ω @ −4.5 V, Schottky V_F = 0.42 V @ 1 A, 125°C	Higher R_DS(on) and V_F increase conduction loss by ~12% at 1.2 A; identical Micro8 footprint	Select when supply chain availability of IRF7526D1PBF is constrained and 12% efficiency penalty is acceptable
DMN3026LSD-13	V_DSS = −30 V, R_DS(on) = 0.21 Ω @ −4.5 V, Schottky V_F = 0.40 V @ 1 A, 125°C; slightly higher Q_g (8.5 nC)	Marginally slower turn-off (t_d(off) = 22 ns vs. 19 ns); same thermal resistance and package	Prefer for designs requiring tighter gate charge matching across multiple channels in multi-phase converters

Compared with Si7851DP-T1-GE3 and DMN3026LSD-13, IRF7526D1PBF offers the lowest combined conduction loss (R_DS(on) + V_F) at 125°C and fastest turn-off delay - critical for high-frequency, thermally limited portable applications where every 0.1 V or 1 ns impacts thermal headroom and efficiency.

Availability

IRF7526D1PBF is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD chargers, Bluetooth headset battery regulation, and industrial IoT sensor node DC-DC conversion requiring stable component supply and long-term lifecycle support.

Supply support for IRF7526D1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device design.

The FETKY product line was developed specifically for high-density, high-efficiency DC-DC conversion in space-constrained portable electronics - combining optimized P-channel MOSFETs and Schottky diodes into single-package solutions to eliminate layout parasitics and reduce bill-of-materials count.

FAQ

What is the maximum continuous drain current for IRF7526D1PBF at 70°C ambient?

The maximum continuous drain current is −1.6 A at T_A = 70°C, based on thermal limits of the Micro8 package with typical PCB copper area. This rating assumes 1 inch² of 2 oz copper on the top layer connected to the drain pads, yielding R_θJA ≈ 100°C/W. Derating follows linear 10 mW/°C beyond 70°C ambient.

Can IRF7526D1PBF be used in synchronous boost configurations?

No - IRF7526D1PBF is a P-channel device intended for high-side switching or synchronous rectification in buck, flyback, or buck-boost topologies where the source is referenced to the output rail. Its gate threshold (−1.0 V) and negative V_GS requirement make it unsuitable for N-channel synchronous boost switches requiring positive gate drive relative to the switch node.

Does the integrated Schottky diode share the same thermal path as the MOSFET junction?

Yes - both the MOSFET die and Schottky die are mounted on a common leadframe within the Micro8 package, resulting in coupled thermal behavior. Junction-to-case resistance is shared, and the rated T_J = 150°C applies to both elements simultaneously. Thermal simulation must treat the device as a single thermal node with combined power dissipation.

Is IRF7526D1PBF compatible with reflow soldering per J-STD-020?

Yes - the device is qualified for lead-free reflow per J-STD-020D, with a peak temperature of 260°C for ≤30 seconds. The Micro8 package's low mass and uniform thermal profile enable reliable solder joint formation without voiding or pad lifting, provided standard stencil aperture (0.15 mm thickness, 1:1 area ratio) and ramp-soak-reflow profile are used.

IRF7526D1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 200mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 180 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro8™

IRF7526D1PBF FAQ

1.How can I place an order for IRF7526D1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7526D1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7526D1PBF reliable?

The price and inventory of IRF7526D1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7526D1PBF is usually 5 days.

3.What payment methods are accepted for IRF7526D1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7526D1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7526D1PBF?

IRF7526D1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7526D1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7526D1PBF?

For technical support, including IRF7526D1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7526D1PBF requirements.

6.How does Aetrix verify that IRF7526D1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7526D1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7526D1PBF meets industry standards.

7.What is the process for return or replacement of IRF7526D1PBF?

All IRF7526D1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7526D1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7526D1PBF part is unused and in its original packaging.

Return procedure for IRF7526D1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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