Infineon Technologies IRF7526D1TRPBF

Overview

IRF7526D1TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET® Power MOSFET and low-forward-voltage Schottky diode in a single Micro8 surface-mount package. It delivers V_DSS = −30 V, R_DS(on) = 0.20 Ω @ V_GS = −4.5 V, and Schottky V_F = 0.39 V @ I_F = 1.0 A, TJ = 125°C - optimized for synchronous buck converter high-side switching in portable power management.

For engineers reviewing the IRF7526D1TRPBF datasheet, IRF7526D1TRPBF pinout, IRF7526D1TRPBF application, or IRF7526D1TRPBF equivalent, key selection criteria include verified body-diode reverse recovery time (t_rr = 30–45 ns), gate charge (Q_g = 7.5–11 nC), thermal resistance (R_θJA = 100 °C/W), and Micro8 footprint compatibility with space-constrained DC-DC designs.

Technical Context

This FETKY device integrates a logic-level P-channel MOSFET and a low-V_F Schottky rectifier on a shared die substrate within a thermally enhanced Micro8 package. The MOSFET features Generation 5 HEXFET processing for low R_DS(on) density, while the Schottky diode provides fast recovery (t_rr ≤ 45 ns) and low forward drop (V_F ≤ 0.62 V at 2 A, 25°C).

It operates with gate drive compatible with standard 3.3 V/5 V controllers, supports pulsed drain current up to −16 A, and maintains stable performance across −55°C to +150°C junction temperature range. The co-packaged architecture eliminates external diode routing, reducing parasitic inductance and layout area by ~50% versus discrete SO-8 solutions.

Key Specifications

Pinout & Package

IRF7526D1TRPBF uses the Micro8 surface-mount package (3.0 mm × 3.0 mm, height <1.1 mm), offering half the footprint of standard SO-8 and optimized for thin-profile portable electronics. Pin numbering follows top-view orientation with pins 1–4 on one side and 5–8 on the opposite side.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged P-MOSFET + Schottky applications.

Compared with Si7851DP-T1-GE3 and DMG6968UVT-7, IRF7526D1TRPBF uniquely balances low gate charge (7.5–11 nC), verified body-diode t_rr (30–45 ns), and integrated Schottky - making it optimal for space-constrained, high-frequency synchronous buck designs where layout simplicity and EMI control are critical.

Availability

IRF7526D1TRPBF is available at Aetrix Electronics and suitable for smartphone power management, USB-C PD portable adapters, and wearable fitness tracker PMICs requiring stable component supply and consistent Micro8 footprint sourcing.

Supply support for IRF7526D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The FETKY product line was developed to address board-area constraints in portable power conversion, integrating optimized P-MOSFETs and Schottky diodes using proprietary co-packaging to reduce parasitics and improve system-level efficiency.

FAQ

What is the maximum continuous drain current for IRF7526D1TRPBF at 70°C ambient?

The maximum continuous drain current is −1.6 A at T_A = 70°C, based on thermal derating from the 1.25 W power dissipation limit and 100 °C/W junction-to-ambient thermal resistance. This value assumes mounting on a 1-inch² copper board and accounts for self-heating under steady-state conditions.

Does IRF7526D1TRPBF require a negative gate drive voltage?

Yes - as a P-channel MOSFET, IRF7526D1TRPBF requires a gate voltage lower than its source to turn on. Full enhancement occurs at V_GS = −4.5 V to −10 V. With source tied to input voltage (e.g., 5 V), the gate must be driven to 0.5–1.0 V or ground to achieve low R_DS(on).

Can the integrated Schottky diode replace an external freewheeling diode in a synchronous buck converter?

Yes - the integrated Schottky serves as the freewheeling path during the low-side conduction phase. Its 0.39 V forward drop at 1 A and 125°C, plus 30–45 ns reverse recovery, make it suitable for high-frequency (>1 MHz) buck converters operating in discontinuous conduction mode without requiring external diode substitution.

Is IRF7526D1TRPBF pin-compatible with other Micro8 dual-FET or FET+diode devices?

No - IRF7526D1TRPBF has a unique pinout: pins 1–4 are common Source/Cathode, pins 5–7 are common Drain/Anode, and pin 8 is Gate. Other Micro8 FET+diode parts (e.g., Si7851DP) use different internal configurations and terminal assignments; direct replacement requires schematic and layout verification.