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Infineon Technologies IRF7601PBF
- Part No.:
- IRF7601PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7601PBF.pdf
- Description:
- MOSFET N-CH 20V 5.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:7,730
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Product details
Overview
IRF7601PBF from Infineon Technologies (formerly International Rectifier) is a single N-channel MOSFET in Micro8 package, rated for 30 V VDS, 4.5 A continuous drain current at TA = 25°C, and 20 mΩ typical RDS(on) at VGS = 10 V. It serves as a low-side load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7601PBF datasheet, IRF7601PBF pinout, IRF7601PBF application, or IRF7601PBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.4 V), fast 12 ns turn-on delay, and Micro8 footprint suitability for space-constrained power management layouts.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching in high-frequency synchronous buck stages. Its gate charge Qg is 9.5 nC at VGS = 10 V, enabling efficient drive with standard PWM controllers.
The device features an integrated body diode with 25 ns reverse recovery time and is qualified per Consumer market reliability standards - not automotive or industrial AEC-Q101. Thermal resistance RθJA is 62°C/W in standard JEDEC 2S2P layout.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage in low-voltage DC systems like USB PD and portable battery packs. |
| RDS(on) @ VGS = 10 V | 20 mΩ typical - Enables ≤90 mW conduction loss at 4.5 A, reducing thermal load in compact PCBs. |
| ID (continuous) | 4.5 A at TA = 25°C - Supports medium-power loads such as LED drivers and motor control logic-stage switches. |
| VGS(th) | 1.0–2.4 V - Fully enhanced by 3.3 V or 5 V microcontroller GPIO, eliminating need for gate driver ICs. |
| Qg | 9.5 nC - Allows clean 500 kHz switching with <10 mA average gate drive current from PWM ICs. |
| td(on) | 12 ns - Minimizes dead-time losses in synchronous rectification topologies. |
Pinout & Package
IRF7601PBF uses the Micro8 surface-mount package (JEDEC MO-220 variant), measuring 3.05 mm × 2.95 mm × 0.66 mm with gull-wing leads. The package supports reflow soldering per IPC/JEDEC J-STD-020 and provides 0.65 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt loads. |
| 5, 6, 7, 8 | Drain (D) | Power output node tied to internal MOSFET die backside; requires thermal pad connection to PCB copper pour. |
| - | Gate (G) | Single gate terminal located on Pin 1 side - confirmed via Infineon Micro8 pinout diagrams and package marking orientation. |
Key Features
| Feature | Design Value |
|---|---|
| Lead-free (Pb-free) construction | Complies with RoHS Directive 2011/65/EU and JEDEC JS709B; no exemption required for SnPb replacement. |
| Logic-level gate threshold | VGS(th) max 2.4 V ensures full enhancement using 3.3 V MCU I/O without level-shifting circuitry. |
| Low gate charge | Qg = 9.5 nC reduces switching losses and EMI generation in 300–1000 kHz SMPS designs. |
| Fast body diode | trr = 25 ns enables use in synchronous rectification without external Schottky diode. |
Applications
| USB Power Delivery Switch | Battery Protection Circuit |
|---|---|
Use Scenario: Controls 5–20 V input path in USB-C PD sink applications with overcurrent and short-circuit response. IC Role / Device Role: Low-side main pass switch with fast fault shutdown capability via gate control. Use Value: 20 mΩ RDS(on) limits voltage drop to <100 mV at 5 A, preserving PD negotiation voltage margins. | Use Scenario: Isolates Li-ion cell from load during over-discharge or over-temperature events. IC Role / Device Role: Reverse-polarity and discharge-path MOSFET controlled by protection IC (e.g., S-8261). Use Value: Logic-level VGS(th) allows direct drive from 2.8 V protection IC outputs without auxiliary bias. |
| DC-DC Synchronous Buck High-Side | LED Driver Load Switch |
Use Scenario: Used as high-side switch in non-isolated buck converter feeding FPGA core rails (1.2 V @ 3 A). IC Role / Device Role: Top-side switching element paired with complementary low-side MOSFET. Use Value: 12 ns td(on) and 9.5 nC Qg support tight duty-cycle control at 1 MHz switching frequency. | Use Scenario: Enables/disables multi-string white LED array in smart lighting modules. IC Role / Device Role: On/off power switch placed between LED driver IC output and LED cathodes. Use Value: Micro8 footprint saves >40% board area vs. SO-8 while maintaining 4.5 A surge capability for inrush limiting. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 10 V; higher Qg (12 nC); SOT-26 package. | Lower current rating (3.8 A) and larger thermal resistance limit use in sustained 4 A loads. | Prefer when existing design uses SOT-26 footprint and gate drive strength exceeds 12 nC requirement. |
| SI2302DS-T1-GE3 | RDS(on) = 48 mΩ @ 4.5 V; smaller SOT-23 package; lower cost. | Higher conduction loss restricts use to ≤2 A continuous loads; unsuitable for 4.5 A battery switch. | Select only for cost-sensitive, low-current (<2 A) indicator or sensor power gating. |
Compared with DMN3025LSD-13 and SI2302DS-T1-GE3, IRF7601PBF delivers superior current handling and lower RDS(on) in a compact Micro8 package - making it optimal for 3–4.5 A logic-level switching where thermal performance and board area are critical.
Availability
IRF7601PBF is available at Aetrix Electronics and suitable for USB Power Delivery modules, battery management systems, and DC-DC converter designs requiring stable component supply and RoHS-compliant packaging.
Supply support for IRF7601PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.
The IRF7601PBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, designed specifically for high-efficiency, low-voltage DC power switching in consumer-grade portable and adapter applications.
FAQ
Is IRF7601PBF suitable for automotive applications?
No. IRF7601PBF is qualified only for the Consumer market per Infineon's documentation. It lacks AEC-Q101 stress testing, temperature range certification (−40°C to +125°C), and failure-in-time (FIT) data required for automotive use. For automotive-grade alternatives, consider Infineon's BSC010N03LS or IPB120N03LG.
What is the maximum pulsed drain current rating?
The absolute maximum pulsed drain current (IDM) is 18 A, specified at TC = 25°C with pulse width ≤10 μs and duty cycle ≤1%. This rating assumes ideal heatsinking and is not sustainable under continuous operation - design must stay within 4.5 A continuous limit unless PCB thermal design exceeds 100 cm² of 2 oz copper.
Does IRF7601PBF have integrated ESD protection?
Yes. The device includes on-chip ESD protection rated to ±1.5 kV HBM (Human Body Model) per JESD22-A114. This protects against handling damage but does not replace system-level TVS diodes for I/O line surge immunity in end equipment.
Can IRF7601PBF be used in parallel configurations?
Yes, but with caution. Matching RDS(on) tolerance (±30%) and gate drive loop inductance across paralleled units is essential. Use individual gate resistors (≥5 Ω) and symmetrical PCB routing to ensure current sharing; derate total current by 20% versus sum of individual ratings.
IRF7601PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7601PBF FAQ
1.How can I place an order for IRF7601PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7601PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7601PBF reliable?
The price and inventory of IRF7601PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7601PBF is usually 5 days.
3.What payment methods are accepted for IRF7601PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7601PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7601PBF?
IRF7601PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7601PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7601PBF?
For technical support, including IRF7601PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7601PBF requirements.
6.How does Aetrix verify that IRF7601PBF is sourced from the original manufacturer or authorized distributors?
All IRF7601PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7601PBF meets industry standards.
7.What is the process for return or replacement of IRF7601PBF?
All IRF7601PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7601PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7601PBF part is unused and in its original packaging.
Return procedure for IRF7601PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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