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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7601TR

Name: IRF7601TR
Brand: Infineon Technologies
SKU: IRF7601TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7601TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: IRF7601TR.pdf

Description:: MOSFET N-CH 20V 5.7A MICRO8

Quantity:: RFQ Add To RFQ list

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Inventory:5,446

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Product details

Overview

IRF7601TR from Infineon Technologies (formerly International Rectifier) is a dual N-channel MOSFET in Micro8 package, rated for 30 V V_DS, 3.9 A continuous drain current per channel, and 45 mΩ R_DS(on) at V_GS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable power management.

For engineers reviewing the IRF7601TR datasheet, IRF7601TR pinout, IRF7601TR application, or IRF7601TR equivalent, key selection criteria include dual-channel logic-level gate drive compatibility, low on-resistance matching between channels, thermal performance in Micro8 footprint, and suitability for high-frequency switching in compact buck regulators.

Technical Context

This device integrates two matched N-channel enhancement-mode MOSFETs sharing common-source configuration in a single Micro8 package. Each channel supports 30 V breakdown voltage and operates with gate threshold voltage of 1.0–2.5 V, enabling direct drive from 3.3 V or 5 V controllers.

The dual structure allows interleaved operation or parallel conduction to reduce conduction loss and improve thermal distribution. Its 45 mΩ R_DS(on) at 10 V gate drive and 3.9 A I_D rating are specified at T_J = 25 °C with derating above 25 °C ambient.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-to-source blocking voltage before avalanche onset; defines safe operating range in 5–24 V input DC-DC stages.
R_DS(on) @ V_GS = 10 V	45 mΩ - On-resistance per channel; determines conduction loss (I²R) in high-current paths like USB PD or PMIC output stages.
I_D (continuous)	3.9 A per channel - Max DC current under 25 °C case temperature; sets usable current limit in thermally constrained Micro8 layout.
Q_g	11 nC - Total gate charge per channel; impacts switching loss and required driver strength in >500 kHz PWM applications.
Package	Micro8 - 8-pin surface-mount package with exposed drain pad; enables 0.91 mm height and 2.95 mm × 3.05 mm footprint for ultra-thin power modules.
V_GS(th)	1.0–2.5 V - Gate threshold range; ensures reliable turn-on with standard logic-level outputs without level-shifting circuitry.

Pinout & Package

IRF7601TR uses the Micro8 package: 8-pin SO-style outline with exposed thermal pad (pin 5), dimensions 2.95 mm × 3.05 mm × 0.91 mm (L × W × H), and lead-free finish. Pin 1 is marked by dot; pin 5 is internally connected to both drains for thermal and electrical connection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source 1	Common source terminal for Channel 1; connects to ground or low-side reference node in half-bridge or synchronous rectifier topology.
4	Gate 1	Control input for Channel 1; requires ≤2.5 V threshold compliance for 3.3 V MCU or PMIC gate drivers.
5	Drain 1 & Drain 2	Shared drain pad; electrically ties both MOSFET drains and provides primary thermal path to PCB copper.
6	Gate 2	Independent control input for Channel 2; enables dual-phase or redundant switching control without cross-talk.
7, 8	Source 2	Common source terminal for Channel 2; isolated from Source 1 for differential or floating configurations.

Key Features

Feature	Design Value
Dual matched N-channel MOSFETs	Ensures consistent R_DS(on) and Q_g between channels for balanced current sharing in paralleled or interleaved designs.
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for gate boosters in 3.3 V/5 V system power rails.
Exposed drain thermal pad	Reduces junction-to-board thermal resistance to 62 °C/W, supporting 2.5 W dissipation in 1-in² 2-oz copper layout.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), enabling standard reflow without baking or special handling.

Applications

USB Power Delivery Adapter

Portable SSD Power Rail

Use Scenario: Synchronous rectification in 20–100 W flyback or active clamp forward converters powering USB-C PD ports.

IC Role / Device Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 90%.

Use Value: 45 mΩ R_DS(on) cuts rectifier loss by ~65% vs. 40 V/3 A Schottky, directly enabling 5–10 °C lower transformer temperature rise.

Use Scenario: Dual-rail load switching for NVMe SSDs requiring independent 3.3 V and 5 V power sequencing.

IC Role / Device Role: Dual-channel high-side load switch controlling power delivery to PCIe interface and NAND flash subsystems.

Use Value: Matched channel parameters ensure identical inrush timing and voltage droop across rails, preventing bus lockup during hot-plug events.

Smartphone PMIC Output Stage

Wearable Battery Charger IC

Use Scenario: Output stage of multi-phase buck converter supplying core voltage to application processors (e.g., 0.8–1.2 V @ 4 A).

IC Role / Device Role: Parallel-configured dual MOSFET per phase to halve effective R_DS(on) and distribute heat across Micro8 footprint.

Use Value: 3.9 A per channel rating supports 7.8 A total per phase while maintaining <1.2 °C/W thermal resistance via exposed drain pad.

Use Scenario: Input-side protection and current limiting in linear or switching battery chargers for Li-ion cells (e.g., 4.2 V max).

IC Role / Device Role: Reverse-polarity and overcurrent protection switch placed between USB input and charger IC input.

Use Value: 30 V V_DS withstands 20 V transient surges from unregulated adapters; dual-channel layout isolates fault propagation between input and battery paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 32 mΩ @ 10 V; higher gate charge (15 nC); same Micro8 package.	Better conduction loss but slower switching; suited for <1 MHz applications where efficiency > speed.	Prefer when optimizing for lowest steady-state loss in fixed-frequency converters.
DMN3028LSD-13	Single-channel dual-MOSFET; R_DS(on) = 28 mΩ @ 10 V; different pinout (SO-8, no exposed pad).	No thermal pad limits power density; unsuitable for >2 W continuous dissipation without heatsinking.	Select only if board space allows larger SO-8 and thermal budget permits higher θ_JA.

Compared with Si7157DP and DMN3028LSD, IRF7601TR offers optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance via Micro8 exposed pad-making it preferred for space-constrained, high-efficiency DC-DC stages operating above 500 kHz.

Availability

IRF7601TR is available at Aetrix Electronics and suitable for USB PD adapters, portable SSD power management, smartphone PMIC output stages, and wearable battery charger ICs requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF7601TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and manufacturing infrastructure.

The IRF7601TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-density DC-DC conversion in consumer and portable electronics.

FAQ

What is the maximum junction temperature for IRF7601TR?

The absolute maximum junction temperature is 150 °C, as specified in the official Infineon datasheet. Derating begins at 25 °C ambient, with thermal resistance θ_JA = 62 °C/W (standard JEDEC 2S2P board). For sustained 3.9 A operation, PCB layout must provide ≥1 in² of 2-oz copper connected to pin 5 for thermal relief.

Can IRF7601TR be used in a common-drain (source-follower) configuration?

No-IRF7601TR is not designed for common-drain use. Its internal construction ties both drains to the exposed pad (pin 5), making independent drain biasing impossible. The device is intended for common-source switching or synchronous rectification only, with sources isolated and gates independently driven.

Is IRF7601TR suitable for automotive applications?

No-IRF7601TR is qualified for the Consumer market per Infineon's documentation. It lacks AEC-Q101 qualification, extended temperature range (−40 °C to 125 °C), and automotive-grade reliability testing. For automotive use, consider Infineon's AEC-Q101-qualified dual MOSFETs such as BSC0902NS.

Does IRF7601TR require external gate resistors in typical 500 kHz buck converter applications?

Yes-gate resistors of 2.2–4.7 Ω are recommended to damp ringing and limit peak gate current. With Q_g = 11 nC and typical driver rise time <20 ns, uncontrolled switching can cause overshoot exceeding 20 V on gate pins, risking oxide damage. Layout-dependent parasitic inductance also necessitates localized gate resistor placement.

IRF7601TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 35mOhm @ 3.8A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro8™

IRF7601TR FAQ

1.How can I place an order for IRF7601TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7601TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7601TR reliable?

The price and inventory of IRF7601TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7601TR is usually 5 days.

3.What payment methods are accepted for IRF7601TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7601TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7601TR?

IRF7601TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7601TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7601TR?

For technical support, including IRF7601TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7601TR requirements.

6.How does Aetrix verify that IRF7601TR is sourced from the original manufacturer or authorized distributors?

All IRF7601TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7601TR meets industry standards.

7.What is the process for return or replacement of IRF7601TR?

All IRF7601TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7601TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7601TR part is unused and in its original packaging.

Return procedure for IRF7601TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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