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Infineon Technologies IRF7601TRPBF
- Part No.:
- IRF7601TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7601TRPBF.pdf
- Description:
- MOSFET N-CH 20V 5.7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:4,254
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Product details
Overview
IRF7601TRPBF from Infineon Technologies (formerly International Rectifier) is a single N-channel MOSFET in Micro8 package, rated for 30 V VDS, 3.9 A continuous drain current at TA = 25°C, and 24 mΩ typical RDS(on) at VGS = 10 V. It serves as a low-side load switch in DC-DC converter synchronous rectification stages and battery protection circuits.
For engineers reviewing the IRF7601TRPBF datasheet, IRF7601TRPBF pinout, IRF7601TRPBF application, or IRF7601TRPBF equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.4 V), fast 12 ns turn-on delay time, and Micro8 footprint suitability for space-constrained power management PCBs.
Technical Context
This MOSFET employs a trench-gate process optimized for low conduction loss and fast switching in high-frequency DC-DC converters. Its gate threshold voltage range ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs without level-shifting.
The device features an integrated body diode with 25 ns reverse recovery time and 1.2 A peak body diode current rating, supporting synchronous buck operation with minimal shoot-through risk when paired with complementary high-side switches.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin |
| RDS(on) @ VGS = 10 V | 24 mΩ typical - Enables ≤0.3 W conduction loss at 3.5 A load current |
| ID (continuous) | 3.9 A @ TA = 25°C - Sustains full-rated load in ambient-cooled PCB layouts |
| Qg | 11 nC - Low gate charge reduces driver power and enables >1 MHz switching |
| td(on) | 12 ns - Supports tight dead-time control in synchronous rectifiers |
| VGS(th) | 1.0–2.4 V - Guaranteed turn-on with standard logic-level MCU outputs |
Pinout & Package
IRF7601TRPBF uses the Micro8 surface-mount package (3.05 × 4.78 mm, 0.66 mm height), with exposed drain pad for thermal enhancement. Pin 1 is Gate, Pin 2 is Source, Pin 3 is Drain, Pin 4 is Source (tied internally to Pin 2), Pins 5–8 are Drain (commonly connected to PCB thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting logic-level voltage; requires <11 nC charge for full enhancement |
| 2 (S) | Source | Reference node for gate drive; tied to ground or low-side return path |
| 3 (D) | Drain | Main current output node; electrically and thermally connected to pins 5–8 and exposed pad |
| 4 (S) | Source | Second source connection-internally bonded to Pin 2 for lower source inductance |
| 5–8 (D) | Drain | Additional drain terminals providing parallel current paths and enhanced thermal dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 3.3 V or 5 V control signals-eliminates need for gate drivers in MCU-based systems |
| Low RDS(on) | 24 mΩ at 10 V ensures <0.3 W conduction loss at 3.5 A-reduces thermal stress in compact enclosures |
| Fast switching | 12 ns td(on) and 25 ns tr enable efficient operation up to 2 MHz in point-of-load converters |
| Micro8 package | 3.05 × 4.78 mm footprint with exposed drain pad-supports high-density layout and 1.5 W thermal dissipation on 1-in² 2-oz copper |
Applications
| Power Bank Protection Circuit | Synchronous Buck Converter |
|---|---|
Use Scenario: Overcurrent and short-circuit protection in portable USB-C power banks using dual-MOSFET back-to-back configuration. IC Role / Device Role: Low-side N-channel switch controlling discharge path from Li-ion cells to output port. Use Value: 24 mΩ RDS(on) limits voltage drop to <90 mV at 3.5 A, preserving battery runtime and enabling accurate current sensing. | Use Scenario: Secondary-side synchronous rectifier in 5 V/3 A step-down converter for FPGA core supply. IC Role / Device Role: Active rectifier replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: 12 ns td(on) allows precise timing alignment with high-side switch, minimizing shoot-through risk at 1.2 MHz switching frequency. |
| USB PD Load Switch | Smartphone Battery Charger IC Interface |
Use Scenario: Inrush current limiting and hot-swap control between USB PD controller and system power rail. IC Role / Device Role: Controlled pass element enabling soft-start and fault-isolation functions. Use Value: VGS(th) range of 1.0–2.4 V ensures clean turn-on under variable 3.3 V control bus conditions without oscillation. | Use Scenario: External pass transistor controlled by linear charger IC (e.g., BQ2419x) to manage charging current into single-cell Li-ion battery. IC Role / Device Role: Adjustable current-limiting switch modulated via gate voltage from charger's ISET pin. Use Value: 11 nC Qg permits stable analog gate control without external op-amp buffering, simplifying feedback loop design. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(on) = 22 mΩ @ 10 V; Micro8 package; slightly lower Qg (9.5 nC) | Identical pinout and thermal profile; marginally faster switching but same VGS(th) range | Preferred where gate drive power must be minimized below 100 µW per switch cycle |
| SI2302DS-T1-GE3 | RDS(on) = 48 mΩ @ 4.5 V; SOT-23 package; higher RDS(on) and smaller thermal mass | Limited to ≤1.5 A continuous loads; unsuitable for >500 kHz switching due to higher Ciss | Only viable for cost-sensitive, low-current (<1 A), low-frequency (<200 kHz) applications |
Compared with DMN3020LSD-13 and SI2302DS-T1-GE3, IRF7601TRPBF delivers optimal balance of low RDS(on), fast switching, and robust thermal performance in Micro8-making it preferred for 3–4 A synchronous rectification and load-switching designs requiring reliability at 1 MHz.
Availability
IRF7601TRPBF is available at Aetrix Electronics and suitable for USB PD power delivery modules, smartphone battery management systems, and industrial DC-DC converter designs requiring stable component supply and long-term manufacturability.
Supply support for IRF7601TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
The IRF7601TRPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion and intelligent load switching in consumer and portable electronics.
FAQ
What is the maximum junction temperature for IRF7601TRPBF?
The absolute maximum junction temperature is 150°C. Derating begins at TA = 25°C, with thermal resistance RθJA = 62°C/W (standard JEDEC 2-layer board). For sustained 3.9 A operation, PCB layout must include ≥1 in² of 2-oz copper connected to the exposed drain pad to maintain TJ < 125°C.
Does IRF7601TRPBF require a gate resistor in typical applications?
A gate resistor is recommended between 10 Ω and 47 Ω to dampen ringing caused by PCB trace inductance and MOSFET Ciss. With Qg = 11 nC and typical MCU drive strength (~20 mA), this ensures controlled 20–50 ns rise time without excessive EMI or overshoot during turn-on.
Can IRF7601TRPBF be used in avalanche energy applications?
No. IRF7601TRPBF is not rated for repetitive unclamped inductive switching (UIS) or avalanche operation. Its datasheet specifies no EAS rating, and the device lacks internal avalanche ruggedness design-use only in clamped or actively commutated topologies.
Is the Micro8 package lead-free and RoHS-compliant?
Yes. The "PBF" suffix confirms lead-free termination and full compliance with EU RoHS Directive 2011/65/EU. The package uses matte tin plating over copper leadframe, with no exemptions claimed, and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.
IRF7601TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 650 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7601TRPBF FAQ
1.How can I place an order for IRF7601TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7601TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7601TRPBF reliable?
The price and inventory of IRF7601TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7601TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7601TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7601TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7601TRPBF?
IRF7601TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7601TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7601TRPBF?
For technical support, including IRF7601TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7601TRPBF requirements.
6.How does Aetrix verify that IRF7601TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7601TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7601TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7601TRPBF?
All IRF7601TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7601TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7601TRPBF part is unused and in its original packaging.
Return procedure for IRF7601TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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