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Infineon Technologies IRF7603TR
- Part No.:
- IRF7603TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7603TR.pdf
- Description:
- MOSFET N-CH 30V 5.6A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:2,007
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Product details
Overview
IRF7603TR from Infineon Technologies (formerly International Rectifier) is a 30V N-channel enhancement-mode Power MOSFET in Micro8 package, featuring 0.035Ω RDS(on) at VGS = 10V, 5.6A continuous drain current at 25°C, and fast switching with 5.7ns turn-on delay. It integrates a low-loss body diode (VSD = 1.2V @ 3.7A) and is optimized for high-efficiency DC-DC converters in space-constrained portable electronics.
For engineers reviewing the IRF7603TR datasheet, IRF7603TR pinout, IRF7603TR application, or IRF7603TR equivalent, key selection criteria include its ultra-low on-resistance in a 1.1mm-profile SOIC-outline package, thermal resistance of 70°C/W (surface-mounted), and gate charge profile (Qg = 18–27nC) critical for synchronous buck converter design and load-switching efficiency.
Technical Context
This Generation V HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining rugged avalanche capability and controlled dv/dt (5.0 V/ns peak diode recovery). Its gate threshold voltage (1.0–2.5V typ.) supports both standard 10V and logic-level 4.5V drive, enabling compatibility with microcontroller GPIOs and dedicated gate drivers.
The Micro8 package delivers half the footprint of SO-8 with identical PCB land pattern compatibility, while its low thermal resistance enables 1.8W power dissipation at 25°C ambient without heatsinking-critical for thermally dense PCMCIA and ultrathin notebook power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V maximum drain-source breakdown - sets safe operating limit for 24V input rails and transient clamping |
| RDS(on) | 0.035Ω @ VGS = 10V - enables <180mW conduction loss at 5.6A, reducing thermal stress in compact layouts |
| ID (continuous) | 5.6A @ TA = 25°C - supports mid-power point-of-load regulation without forced airflow |
| Qg | 18–27nC - determines gate driver current requirement and switching loss trade-off in 500kHz+ converters |
| trr / Qrr | 53–80ns / 87–130nC - defines body diode reverse recovery behavior during synchronous rectification dead-time |
| RθJA | 70°C/W - measured on FR-4 board, t ≤ 10 sec - establishes junction temperature rise under steady-state load |
| VGS(th) | 1.0–2.5V - ensures reliable turn-on with 3.3V logic-level gate drive, eliminating need for level shifters |
Pinout & Package
IRF7603TR is housed in the Micro8 surface-mount package (JEDEC MO-229, EIA-481 compliant), measuring 4.24 × 3.20 mm with 0.65 mm pitch and 1.1 mm max height. The package features dual-drain leads (pins 1–4 and 5–8) for enhanced current handling and thermal spreading.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 | Drain (D), Source (S), Gate (G) | Pins 1–4 and 5–8 are internally paralleled drains; pin 6 is gate; pins 7 and 8 are sources - enables low-inductance, high-current routing with minimal loop area |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.035Ω @ 10V drives - reduces I²R losses by >40% vs. legacy SO-8 MOSFETs at same current density |
| Micro8 footprint | 4.24 × 3.20 mm - saves 50% PCB area vs. SO-8, enabling dual-phase designs in same board real estate |
| Low-profile height | <1.1 mm - fits within 1.6mm stack-up constraints of PCMCIA cards and slim battery packs |
| Fast switching | 5.7ns td(on), 12ns tf - minimizes transition losses in high-frequency (>1MHz) DC-DC topologies |
Applications
| Portable DC-DC Converters | USB-C Power Delivery Switches |
|---|---|
Use Scenario: Step-down conversion from 12V/20V USB-C PD input to 3.3V/5V system rails in ultrabooks and tablets. IC Role / Device Role / Timing Role: Synchronous high-side switch in buck regulator, operating at 500kHz–1MHz with precise dead-time control. Use Value: 0.035Ω RDS(on) and 18nC Qg enable >94% efficiency at 4A load while staying within 1.1mm Z-height envelope. | Use Scenario: Load switching for USB-C port power path management, supporting up to 3A continuous current. IC Role / Device Role / Timing Role: Low-side or high-side load switch controlling VBUS delivery, with integrated body diode for reverse-current blocking. Use Value: 1.2V VSD and 53ns trr ensure minimal forward drop and fast reverse recovery during hot-plug events. |
| PCMCIA Card Power Rails | Industrial Sensor Node Power Gates |
Use Scenario: Primary power switch for Type II PCMCIA cards requiring <1.6mm total thickness and 5V/3.3V rail sequencing. IC Role / Device Role / Timing Role: Main power FET enabling card insertion detection and controlled power-up via gate-controlled ramp. Use Value: Micro8's 1.1mm height and 70°C/W RθJA allow full 5.6A rating without derating in confined airless environments. | Use Scenario: Battery-isolation switch in wireless sensor nodes powered by Li-ion cells (2.7–4.2V range). IC Role / Device Role / Timing Role: Low-threshold (1.0V VGS(th)) load switch activated directly by MCU GPIO, minimizing BOM count. Use Value: Reliable turn-on at 3.0V VGS ensures robust operation across battery discharge curve without external bias. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.028Ω @ 4.5V, but 30V VDS, Micro8 package, Qg = 22nC | Better low-voltage drive performance; slightly higher cost and longer lead time | Select when 3.3V gate drive dominates design and sub-30mΩ RDS(on) is required |
| DMN3025LSD-13 | RDS(on) = 0.025Ω @ 4.5V, 30V VDS, SO-8 package, Qg = 20nC, 1.75mm height | Larger footprint and height; higher thermal resistance (80°C/W) | Choose only if Micro8 assembly capability is unavailable and board space permits SO-8 |
Compared with Si7157DP and DMN3025LSD, IRF7603TR offers the lowest profile (1.1mm) and best thermal resistance (70°C/W) in Micro8, making it optimal for ultra-thin applications where height and thermal margin are primary constraints-not just RDS(on).
Availability
IRF7603TR is available at Aetrix Electronics and suitable for portable DC-DC converters, USB-C power delivery switches, and PCMCIA card power rails requiring stable component supply, tape-and-reel packaging, and consistent date-code traceability.
Supply support for IRF7603TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with headquarters in Munich, Germany.
The IRF7603TR belongs to Infineon's Generation V HEXFET Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion in portable and thin-form-factor electronics.
FAQ
What is the maximum continuous drain current for IRF7603TR at 70°C ambient?
The IRF7603TR supports 4.5A continuous drain current at TA = 70°C with VGS = 10V, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the Micro8 package on standard FR-4 PCBs without heatsinking or forced airflow.
Does IRF7603TR have avalanche rating, and is it suitable for inductive switching?
Yes-IRF7603TR is rated for repetitive avalanche energy (EAS) per datasheet Figure 8 (SOA curve), confirming ruggedness for inductive load switching. Its 30V VDS rating and controlled dv/dt (5.0 V/ns) make it suitable for flyback and buck converter topologies with proper snubbing.
Can IRF7603TR be driven directly from a 3.3V microcontroller GPIO?
Yes-the gate threshold voltage (VGS(th)) ranges from 1.0V to 2.5V, and RDS(on) is 0.060Ω at VGS = 4.5V. At 3.3V, it operates in linear region with higher on-resistance (~0.08–0.12Ω), acceptable for low-duty-cycle or low-current switching where efficiency is secondary to simplicity.
What is the recommended PCB footprint for IRF7603TR in Micro8 package?
The manufacturer-recommended footprint is 4.24 mm × 3.20 mm with eight 0.38 mm × 1.04 mm pads spaced at 0.65 mm pitch. Thermal pad (if used) must remain unconnected per datasheet; copper pour on drain pads improves thermal performance without violating isolation requirements.
IRF7603TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7603TR FAQ
1.How can I place an order for IRF7603TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7603TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7603TR reliable?
The price and inventory of IRF7603TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7603TR is usually 5 days.
3.What payment methods are accepted for IRF7603TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7603TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7603TR?
IRF7603TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7603TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7603TR?
For technical support, including IRF7603TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7603TR requirements.
6.How does Aetrix verify that IRF7603TR is sourced from the original manufacturer or authorized distributors?
All IRF7603TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7603TR meets industry standards.
7.What is the process for return or replacement of IRF7603TR?
All IRF7603TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7603TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7603TR part is unused and in its original packaging.
Return procedure for IRF7603TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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