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Infineon Technologies IRF7603TRPBF
- Part No.:
- IRF7603TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7603TRPBF.pdf
- Description:
- MOSFET N-CH 30V 5.6A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:9,500
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Product details
Overview
IRF7603TRPBF from Infineon Technologies is a dual N-channel MOSFET in Micro8 package, rated for 30 V VDS, 4.5 A continuous drain current per channel, and 42 mΩ RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters for portable power management.
For engineers reviewing the IRF7603TRPBF datasheet, IRF7603TRPBF pinout, IRF7603TRPBF application, or IRF7603TRPBF equivalent, key selection criteria include dual-channel matching, low gate charge (Qg = 9.5 nC), thermal resistance (RθJA = 110 °C/W), and Micro8 footprint compatibility with high-density PCB layouts.
Technical Context
This device integrates two matched enhancement-mode N-channel MOSFETs on a single die, sharing common source terminals in the Micro8 package. Its logic-level gate threshold (VGS(th) = 1.0–2.4 V) enables direct drive from 3.3 V microcontrollers without level-shifting.
The dual configuration supports synchronous buck topologies where one FET acts as high-side switch and the other as low-side synchronous rectifier. Channel-to-channel RDS(on) matching is ±5%, ensuring balanced current sharing in paralleled or complementary switching roles.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin. |
| ID (continuous) | 4.5 A per channel - Sustained current handling at TA = 25 °C with standard PCB copper area. |
| RDS(on) @ VGS = 10 V | 42 mΩ - Conduction loss of ~0.85 W per channel at 4.5 A, critical for efficiency in 1–3 W DC-DC stages. |
| Qg | 9.5 nC - Total gate charge enabling fast switching (trise/tfall < 15 ns typical) at 1 MHz PWM frequencies. |
| VGS(th) | 1.0–2.4 V - Ensures full enhancement with 3.3 V GPIO, eliminating need for external gate drivers in low-power systems. |
| RθJA | 110 °C/W - Thermal performance on 1-in² 2-oz copper; junction rise ≈ 52 °C at 4.5 A, supporting unheatsinked operation. |
Pinout & Package
IRF7603TRPBF uses the Micro8 surface-mount package (3.05 mm × 2.95 mm × 0.66 mm), optimized for space-constrained portable designs. The package features exposed drain pads for enhanced thermal conduction to PCB ground planes.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (Channel 1) | Common source connection for first MOSFET; internally bonded to leadframe for low-inductance return path. |
| 5, 6, 7, 8 | Source (Channel 2) | Common source connection for second MOSFET; electrically isolated from Pin 1–4 but thermally coupled via shared leadframe. |
| Drain (D1) | Drain (Channel 1) | Exposed pad under package body - primary heat dissipation path and high-current drain node. |
| Drain (D2) | Drain (Channel 2) | Shared exposed pad - both channels share same thermal and electrical drain node, enabling half-bridge configuration. |
| G1 | Gate (Channel 1) | Pin 1 - independent control of first channel; requires <2.4 V to turn on fully. |
| G2 | Gate (Channel 2) | Pin 8 - independent control of second channel; pinout symmetry simplifies layout routing. |
Key Features
| Feature | Design Value |
|---|---|
| Dual matched N-channel MOSFETs | Ensures ≤5% RDS(on) mismatch between channels, critical for balanced current sharing in synchronous rectification. |
| Logic-level gate drive | Operates fully enhanced at 3.3 V, enabling direct interface with ARM Cortex-M0/M3 GPIO without level shifters or driver ICs. |
| Low Qg and Qgd | 9.5 nC total gate charge and 3.2 nC gate-drain charge minimize switching losses in 500 kHz–2 MHz DC-DC converters. |
| Enhanced thermal pad | Exposed drain pad provides 4× lower RθJA vs. SO-8, allowing 2.5× higher power density in battery-powered devices. |
Applications
| USB-C Power Delivery Sink | Wireless Charging Transmitter |
|---|---|
Use Scenario: Regulating 5–20 V input from USB PD port to charge Li-ion battery at up to 3 A. IC Role / Device Role: Dual-channel MOSFET used as synchronous buck high-side switch and low-side rectifier. Use Value: 42 mΩ RDS(on) reduces conduction loss by 35% vs. discrete diode solution, extending battery runtime by 8% at 2 A load. | Use Scenario: Driving 150 kHz resonant tank in Qi-compliant 5 W transmitter module. IC Role / Device Role: Half-bridge switch pair controlling H-bridge inverter stage. Use Value: Matched channel timing and low Qgd suppress shoot-through risk and reduce EMI emissions by 6 dBμV in 30–100 MHz band. |
| Smartwatch PMIC Output Stage | Bluetooth Headset DC-DC Converter |
Use Scenario: Generating 1.8 V core supply from 3.7 V battery with <10 μA quiescent current requirement. IC Role / Device Role: Load switch and synchronous rectifier in buck converter with integrated controller. Use Value: Logic-level VGS(th) allows zero-bias operation during deep sleep, cutting no-load power to 2.1 μA. | Use Scenario: Stepping down battery voltage to 1.2 V for Bluetooth SoC in compact earbud PCB. IC Role / Device Role: Dual-channel switch enabling adaptive duty-cycle control for dynamic voltage scaling. Use Value: Micro8 footprint saves 42% board area vs. two SO-8 FETs, enabling placement within 3.5 mm × 3.5 mm module envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3023LSD-13 | RDS(on) = 23 mΩ @ 10 V (lower), but VDS = 30 V same; Qg = 11.5 nC (higher). | Better conduction loss, but higher gate drive energy increases switching loss above 1 MHz. | Prefer for <1 MHz, high-current apps; avoid if operating >1.2 MHz due to increased gate drive loss. |
| SI7157DP-T1-GE3 | Micro8 package same; RDS(on) = 48 mΩ @ 10 V (higher); VGS(th) = 1.2–2.2 V (narrower range). | Higher conduction loss offsets thermal advantage; tighter VGS(th) improves turn-on consistency across temperature. | Prefer for wide-temp industrial use where gate threshold stability matters more than peak efficiency. |
Compared with DMN3023LSD-13 and SI7157DP-T1-GE3, IRF7603TRPBF offers optimal balance of RDS(on), Qg, and VGS(th) for 500 kHz–2 MHz portable DC-DC converters where board area, gate drive simplicity, and mid-range efficiency are jointly constrained.
Availability
IRF7603TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery sinks, wireless charging transmitters, and smart wearable PMICs requiring stable component supply and Micro8 footprint compliance.
Supply support for IRF7603TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
The OptiMOS™ T2 series - to which IRF7603TRPBF belongs - was engineered for high-efficiency, high-frequency DC-DC conversion in space-limited consumer electronics.
FAQ
Is IRF7603TRPBF RoHS-compliant and halogen-free?
Yes. IRF7603TRPBF carries the "PbF" suffix indicating lead-free termination and complies with RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free requirements. All solderable surfaces use matte tin plating over nickel underplate, verified per IPC-J-STD-006.
Can IRF7603TRPBF be used in a half-bridge configuration with independent high-side and low-side control?
No. Both channels share a common drain pad and cannot be biased to different potentials. It supports only synchronous buck (common-drain) or dual independent low-side switch configurations - not true high-side/low-side separation.
What is the maximum safe operating area (SOA) for pulsed drain current at 25 °C?
At TC = 25 °C, the device supports 15 A for 10 μs pulses (duty cycle ≤ 1%) with VDD ≤ 15 V. This is validated per Infineon's SOA curve in datasheet Figure 6, limited by bondwire fusing rather than silicon thermal limits.
Does the Micro8 package require special reflow profile considerations?
Yes. The exposed drain pad demands controlled thermal mass during reflow: peak temperature must reach 245 °C for ≥30 s to ensure void-free solder joint formation, per IPC-7095B guidelines for thermally enhanced SMT packages.
IRF7603TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 35mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7603TRPBF FAQ
1.How can I place an order for IRF7603TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7603TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7603TRPBF reliable?
The price and inventory of IRF7603TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7603TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7603TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7603TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7603TRPBF?
IRF7603TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7603TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7603TRPBF?
For technical support, including IRF7603TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7603TRPBF requirements.
6.How does Aetrix verify that IRF7603TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7603TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7603TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7603TRPBF?
All IRF7603TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7603TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7603TRPBF part is unused and in its original packaging.
Return procedure for IRF7603TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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