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Infineon Technologies IRF7604TR
- Part No.:
- IRF7604TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7604TR.pdf
- Description:
- MOSFET P-CH 20V 3.6A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:7,018
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Product details
Overview
IRF7604TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in Micro8 package, rated for -20V VDSS, 0.09Ω RDS(on) at VGS = -4.5V, and -3.6A continuous drain current at 25°C. It serves as a compact, low-profile load switch or reverse-polarity protection device in space-constrained portable electronics and PCMCIA cards.
For engineers reviewing the IRF7604TR datasheet, IRF7604TR pinout, IRF7604TR application, or IRF7604TR equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility (-2.7V threshold), ultra-low on-resistance footprint efficiency, thermal performance under pulsed loads, and body diode recovery behavior in synchronous buck or OR-ing configurations.
Technical Context
This fifth-generation HEXFET uses advanced silicon processing to achieve 0.09Ω RDS(on) at -4.5V gate drive and supports fast switching with 17ns turn-on delay, 53ns rise time, and 38ns fall time under defined test conditions (VDD = -10V, RG = 6.0Ω). Its integrated body diode exhibits 41ns typical reverse recovery time and 38nC Qrr at 100A/µs di/dt.
The device operates across -55°C to +150°C junction temperature range, features ±12V gate-to-source voltage rating, and delivers 1.8W power dissipation at 25°C ambient with 70°C/W junction-to-ambient thermal resistance on FR-4 board - enabled by the Micro8 package's reduced footprint and <1.1mm profile.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -20V - Maximum drain-to-source blocking voltage for reverse-polarity protection or high-side switching |
| RDS(on) | 0.09Ω @ VGS = -4.5V - Enables <100mW conduction loss at 3.3A load current |
| ID (25°C) | -3.6A - Continuous drain current capability with standard SOIC-compatible PCB layout |
| Qg | 13nC typ. - Low gate charge reduces driver power and enables efficient 1MHz-class switching |
| VGS(th) | -0.70V min. - Confirmed logic-level compatibility with 1.8V–3.3V microcontroller GPIO |
| tr/tf | 53ns/38ns - Fast edge rates support high-efficiency DC-DC conversion with minimal switching loss |
| Ciss | 590pF - Input capacitance impacts gate drive loop stability and Miller effect in high-speed layouts |
Pinout & Package
IRF7604TR is housed in the Micro8 surface-mount package - a halved-footprint SOIC variant measuring 3.05mm × 4.24mm × <1.1mm height, optimized for ultra-thin portable designs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7 | Drain (D) | Seven parallel internal drain connections - provide low-inductance, high-current path to PCB ground plane |
| 8 | Gate (G) | Single gate input - requires no level-shifting for 3.3V logic control; sensitive to ESD per ±12V rating |
| S (pins 1–7 substrate) | Source (S) | Exposed source pad on bottom of package - primary thermal path and return node for load current |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.09Ω at -4.5V ensures <120mW conduction loss at 3.6A, critical for battery-powered efficiency |
| Micro8 package | 3.05mm × 4.24mm footprint - 50% smaller than SO-8, enabling dense PCB layouts in handheld devices |
| Logic-level gate drive | VGS(th) down to -0.7V allows direct interface with 1.8V/3.3V MCUs without external level shifters |
| Fast body diode | 41ns trr and 38nC Qrr reduce shoot-through risk and losses in synchronous rectification |
| Thermal robustness | 70°C/W RθJA on FR-4 enables 1.8W operation without heatsink in thin-profile enclosures |
Applications
| Portable USB Power Switching | PCMCIA Card Reverse Polarity Protection |
|---|---|
Use Scenario: Enabling/disabling 5V USB VBUS to peripheral modules in smartphones and tablets using MCU GPIO. IC Role / Device Role / Timing Role: High-side P-channel load switch controlling power rail sequencing with <100ns response to gate signal. Use Value: 0.09Ω RDS(on) limits voltage drop to <360mV at 3.6A, preserving USB compliance while minimizing heat in sealed chassis. | Use Scenario: Preventing damage from incorrect insertion of PCMCIA cards into host slots with reversed power polarity. IC Role / Device Role / Timing Role: Reverse-voltage blocking element placed between card edge connector and system power domain. Use Value: -20V VDSS withstands transient overvoltage during hot-plug events; Micro8 height <1.1mm fits within tight card thickness constraints. |
| Low-Voltage Synchronous Buck High-Side Switch | Industrial Sensor Node Power Gating |
Use Scenario: High-side switch in 3.3V-input buck converter supplying 1.2V core voltage to microcontrollers. IC Role / Device Role / Timing Role: P-channel MOSFET operating in synchronous rectification mode with controlled dead-time management. Use Value: 41ns trr and low Qrr minimize cross-conduction losses and improve light-load efficiency above 85%. | Use Scenario: Isolating power to analog sensor circuits (e.g., thermocouple amplifiers) during MCU sleep modes. IC Role / Device Role / Timing Role: Precision power gate enabling sub-µA standby current via complete rail disconnection. Use Value: -100nA gate leakage at VGS = -12V ensures <10nA control-line loading, preserving deep-sleep current budgets. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.075Ω @ -4.5V; Micro8 package; VDSS = -20V; Qg = 11.5nC | Lower conduction loss but tighter gate threshold distribution (−0.4V to −1.0V) may require validation with weak-drive MCUs | Preferred when <50mW conduction loss is mandatory and gate drive strength exceeds 2mA. |
| DMG2305UVT-7 | RDS(on) = 0.052Ω @ -4.5V; SOT-26 package; VDSS = -20V; Qg = 10.5nC | Smaller SOT-26 footprint lacks thermal mass; RθJA = 125°C/W limits continuous current to ~2.2A on FR-4 | Selected only for ultra-low-power (<2A) applications where PCB area is more constrained than thermal budget. |
Compared with Si7851DP-T1-GE3 and DMG2305UVT-7, IRF7604TR offers balanced trade-offs: superior thermal performance over SOT-26 alternatives and wider gate threshold margin than tighter-spec Si7851, making it more robust for unbuffered GPIO drive in cost-sensitive industrial designs.
Availability
IRF7604TR is available at Aetrix Electronics and suitable for portable USB power switching, PCMCIA reverse polarity protection, low-voltage synchronous buck high-side switching, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.
Supply support for IRF7604TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions.
The IRF7604TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load switching in battery-powered and portable electronics.
FAQ
What is the maximum continuous drain current for IRF7604TR at 70°C ambient?
The IRF7604TR supports -2.9A continuous drain current at TA = 70°C with VGS = -4.5V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by its 70°C/W junction-to-ambient resistance on standard FR-4 PCBs without forced airflow or copper pour enhancements.
Does IRF7604TR require a gate resistor for reliable switching?
A gate resistor is recommended to dampen ringing and control dv/dt during switching transitions. While not strictly required for basic on/off operation, a 10Ω–47Ω series resistor improves EMI performance and prevents potential gate oscillation due to PCB trace inductance interacting with the device's 590pF Ciss and 170pF Crss.
Can IRF7604TR be used in linear regulation mode?
No - IRF7604TR is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only, and continuous linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA derating data beyond single-pulse conditions.
Is the Micro8 package lead-free and RoHS-compliant?
Yes - IRF7604TR is manufactured in a lead-free, RoHS-compliant Micro8 package per Infineon's standard qualification. The device carries the "Pb-free" marking on the top-side laser etch and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH.
IRF7604TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 4.5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 590 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7604TR FAQ
1.How can I place an order for IRF7604TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7604TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7604TR reliable?
The price and inventory of IRF7604TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7604TR is usually 5 days.
3.What payment methods are accepted for IRF7604TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7604TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7604TR?
IRF7604TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7604TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7604TR?
For technical support, including IRF7604TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7604TR requirements.
6.How does Aetrix verify that IRF7604TR is sourced from the original manufacturer or authorized distributors?
All IRF7604TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7604TR meets industry standards.
7.What is the process for return or replacement of IRF7604TR?
All IRF7604TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7604TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7604TR part is unused and in its original packaging.
Return procedure for IRF7604TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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