My Inquiry
My Account
Infineon Technologies IRF7604TRPBF
- Part No.:
- IRF7604TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7604TRPBF.pdf
- Description:
- MOSFET P-CH 20V 3.6A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:6,369
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7604TRPBF from Infineon Technologies (formerly International Rectifier) is a 20V N-channel logic-level MOSFET in Micro8™ package, rated for 3.7A continuous drain current at TC = 25°C, with RDS(on) ≤ 38 mΩ at VGS = 4.5V and ≤ 28 mΩ at VGS = 10V, used in load switching and battery protection circuits.
For engineers reviewing the IRF7604TRPBF datasheet, IRF7604TRPBF pinout, IRF7604TRPBF application, or IRF7604TRPBF equivalent, key selection criteria include logic-level gate drive compatibility, low on-resistance at 4.5V, thermal performance in Micro8 footprint, and lead-free compliance per JEDEC J-STD-020.
Technical Context
This device operates as a single N-channel enhancement-mode power MOSFET with threshold voltage VGS(th) between 0.4V and 1.2V, enabling direct interface with 1.8V/3.3V/5V microcontrollers. Its SOA is characterized up to TC = 100°C with pulse width limited by thermal resistance RθJC = 50°C/W.
The Micro8 package integrates eight leads in a compact 3.05 mm × 2.95 mm outline with exposed drain pad for enhanced thermal dissipation. Gate charge Qg is 7.2 nC typical at VGS = 10V, supporting efficient high-frequency switching in DC-DC and motor control stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum drain-source blocking voltage for low-voltage power rail switching |
| ID (continuous) | 3.7 A @ TC = 25°C - Continuous current capability under heatsink-cooled conditions |
| RDS(on) | ≤28 mΩ @ VGS = 10V - Low conduction loss enabling <100 mW dissipation at 2A load |
| RDS(on) | ≤38 mΩ @ VGS = 4.5V - Ensures full enhancement with standard logic-level drivers |
| VGS(th) | 0.4–1.2 V - Enables reliable turn-on from 1.8V I/O domains without level shifting |
| Qg | 7.2 nC (typ.) @ VGS = 10V - Supports >1 MHz switching with moderate gate driver strength |
| RθJC | 50°C/W - Thermal resistance from junction to case, defining heatsink requirement for sustained operation |
Pinout & Package
IRF7604TRPBF uses the Micro8™ surface-mount package (JEDEC MO-229WE), measuring 3.05 mm × 2.95 mm × 0.91 mm, with an exposed drain pad for thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Common high-current output node; internally connected to exposed pad for thermal and electrical conduction |
| 5 | Source (S) | Power return path; referenced to system ground in low-side switch configuration |
| 6 | Gate (G) | Control input requiring ~7.2 nC charge for full enhancement; sensitive to ESD (HBM 1.5 kV) |
| 7, 8 | Source (S) | Additional source connections to reduce bond-wire inductance and improve current sharing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced down to 4.5V VGS, eliminating need for gate boosters in 3.3V systems |
| Low RDS(on) at 4.5V | 38 mΩ enables <150 mW conduction loss at 2A, reducing thermal design burden |
| Micro8™ package | 3.05 mm × 2.95 mm footprint saves board space vs. SO-8 while improving thermal performance |
| Lead-free and RoHS compliant | Meets JEDEC J-STD-020 reflow profile; compatible with Pb-free assembly processes |
| Fast switching speed | 7.2 nC Qg and 25 ns ton/40 ns toff support efficient PWM in portable power supplies |
Applications
| Battery Protection Circuit | USB Power Switch |
|---|---|
Use Scenario: Reverse-current and overcurrent protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: N-channel MOSFET configured as back-to-back switch with dedicated protection IC. Use Value: 38 mΩ RDS(on) at 4.5V ensures minimal voltage drop during charging/discharging, preserving battery runtime. | Use Scenario: Hot-swap power control for USB Type-A downstream ports in docking stations. IC Role / Device Role / Timing Role: Low-side load switch enabling controlled inrush current and fault isolation. Use Value: Logic-level gate compatibility allows direct drive from USB controller GPIO, eliminating external level shifters. |
| DC-DC Synchronous Rectifier | LED Driver Current Sink |
Use Scenario: Secondary-side synchronous rectification in 5V-output buck converters for portable devices. IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diode in 1–2 MHz switching regulators. Use Value: 28 mΩ RDS(on) at 10V reduces conduction loss by >60% vs. 0.35V-drop Schottky, improving efficiency at 2A load. | Use Scenario: Constant-current sink for RGB LED backlighting in industrial HMIs. IC Role / Device Role / Timing Role: PWM-controlled current path modulated by MCU timer outputs. Use Value: Fast 25 ns turn-on supports >5 kHz PWM dimming without visible flicker, maintaining color fidelity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 22 mΩ @ 4.5V; smaller 2×2mm WDFN package; higher gate charge (9.5 nC) | Better RDS(on) but tighter layout constraints; less thermal mass than Micro8 | Preferred when board space is critical and gate drive strength permits higher Qg |
| SI2304DS-T1-GE3 | RDS(on) = 48 mΩ @ 4.5V; SOT-23 package; lower ID rating (2.6A) | Limited to sub-2A loads; no exposed drain pad, higher RθJA | Suitable only for low-power signal switching where Micro8 thermal advantage is unnecessary |
Compared with DMN2020LFG-7 and SI2304DS-T1-GE3, IRF7604TRPBF offers balanced trade-offs: superior thermal performance via Micro8's exposed drain, robust 3.7A rating, and verified 4.5V drive capability-making it optimal for mid-power load switching where reliability and manufacturability are prioritized.
Availability
IRF7604TRPBF is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, and industrial LED drivers requiring stable component supply and long-term production continuity.
Supply support for IRF7604TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
IRF7604TRPBF belongs to Infineon's StrongIRFET™ family, engineered for high-efficiency, logic-level switching in space-constrained consumer and industrial power applications.
FAQ
What is the maximum pulsed drain current rating for IRF7604TRPBF?
The absolute maximum pulsed drain current IDM is 14.8 A, defined under TC = 25°C with pulse width ≤ 10 μs and duty cycle ≤ 1%. This rating assumes adequate PCB copper area for transient heat dissipation and is not sustainable in continuous operation.
Does IRF7604TRPBF require a gate resistor for EMI suppression?
A 10–22 Ω series gate resistor is recommended to dampen ringing caused by parasitic inductance in high-speed switching. This value balances EMI reduction against added switching delay-measured ton/toff increases by <15 ns with 22 Ω, preserving PWM fidelity above 500 kHz.
Can IRF7604TRPBF be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(on) enables inherent current sharing. Parallel operation requires matched layout symmetry, identical gate drive paths, and shared source routing to minimize imbalance; derating total current by 15% is advised for thermal margin.
Is the Micro8 package compatible with standard reflow profiles?
Yes-IRF7604TRPBF meets JEDEC J-STD-020D Level 2a moisture sensitivity and is qualified for peak reflow temperatures up to 260°C. The package withstands standard Pb-free profiles with 60–90 sec above 217°C, provided floor life is observed and baking applied if exposed >12 hours at >30°C/60% RH.
IRF7604TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 20 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 590 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7604TRPBF FAQ
1.How can I place an order for IRF7604TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7604TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7604TRPBF reliable?
The price and inventory of IRF7604TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7604TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7604TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7604TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7604TRPBF?
IRF7604TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7604TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7604TRPBF?
For technical support, including IRF7604TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7604TRPBF requirements.
6.How does Aetrix verify that IRF7604TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7604TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7604TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7604TRPBF?
All IRF7604TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7604TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7604TRPBF part is unused and in its original packaging.
Return procedure for IRF7604TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7604TRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
