My Inquiry
My Account
Infineon Technologies IRF7606TR
- Part No.:
- IRF7606TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7606TR.pdf
- Description:
- MOSFET P-CH 30V 3.6A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:5,146
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7606TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET Power MOSFET in Micro8 package, rated for -30 V VDS, 0.09 Ω RDS(on) at VGS = -10 V, and -3.6 A continuous drain current at 25°C. It integrates a fast-recovery body diode (trr = 43 ns typical) and supports high-efficiency load switching in space-constrained DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7606TR datasheet, IRF7606TR pinout, IRF7606TR application, or IRF7606TR equivalent, key selection criteria include its low-profile Micro8 footprint (<1.1 mm height), -30 V breakdown voltage, 0.09 Ω on-resistance, -2.4 A body diode conduction capability, and thermal resistance of 70 °C/W (junction-to-ambient).
Technical Context
This device operates as a single P-channel power switch with gate threshold voltage of -1.0 V (min), enabling logic-level drive from 3.3 V or 5 V controllers. Its fast switching performance is characterized by 13 ns turn-on delay, 20 ns rise time, and 39 ns fall time under specified test conditions (VDD = -10 V, RG = 6.0 Ω).
The integrated body diode exhibits VSD = -1.2 V at -2.4 A and reverse recovery charge Qrr = 50 nC (typ), supporting synchronous rectification and bidirectional current handling in buck converters and OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum blocking voltage for negative-rail high-side switching |
| RDS(on) | 0.09 Ω @ VGS = -10 V - Enables <100 mW conduction loss at 3.3 A load current |
| ID (25°C) | -3.6 A - Continuous drain current rating for PCB-mounted operation without heatsink |
| trr | 43 ns typical - Supports >1 MHz switching in synchronous buck topologies |
| Qg | 20 nC typical - Low gate charge reduces driver power and enables efficient PWM control |
| RθJA | 70 °C/W - Thermal limit defines maximum power dissipation (1.8 W at 25°C ambient) |
| VGS(th) | -1.0 V min - Ensures reliable turn-on with standard 3.3 V GPIO or logic-level drivers |
Pinout & Package
IRF7606TR uses the Micro8 surface-mount package (JEDEC MO-229 variant), measuring 3.05 mm × 4.24 mm × <1.1 mm, with gull-wing leads and 0.65 mm pitch. Its compact footprint occupies ~50% less board area than standard SO-8.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Drain (D) | Common high-current output node; internally paralleled for low RDS(on) and thermal spreading |
| 7 | Gate (G) | Control input; requires negative VGS for turn-on; total gate charge 20 nC |
| 8 | Source (S) | Reference terminal for gate drive and load return path; connects to system ground or negative rail |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.09 Ω at VGS = -10 V - Reduces I²R losses in portable power rails |
| Micro8 package | 3.05 mm × 4.24 mm footprint, <1.1 mm height - Fits PCMCIA, thin tablets, and wearable PCBs |
| Fifth-generation HEXFET | Improved thermal resistance and current handling vs. prior generations - Extends safe operating area at elevated temperatures |
| Fast body diode | trr = 43 ns, Qrr = 50 nC - Minimizes switching loss during freewheeling in buck regulators |
Applications
| Battery Protection Circuit | Load Switch for USB OTG |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path; activated by protection IC's gate signal. Use Value: 0.09 Ω RDS(on) limits voltage drop to <330 mV at 3.6 A, preserving runtime and reducing thermal stress. | Use Scenario: Controlled power enable for USB On-The-Go peripherals requiring 5 V VBUS sourcing. IC Role / Device Role / Timing Role: Load switch isolating downstream circuitry; driven by microcontroller GPIO with logic-level compatibility. Use Value: -1.0 V VGS(th) ensures full enhancement with 3.3 V control, eliminating need for level-shifting circuitry. |
| Synchronous Buck Converter High-Side Switch | Hot-Swap Controller Back-End Switch |
Use Scenario: High-efficiency 3.3 V or 5 V point-of-load regulation in embedded systems. IC Role / Device Role / Timing Role: Synchronous rectifier replacement for low-side diode; commutated with precise timing relative to low-side FET. Use Value: 43 ns trr and 50 nC Qrr reduce dead-time losses and EMI generation during body-diode conduction. | Use Scenario: Inrush current limiting and fault isolation in industrial backplane power modules. IC Role / Device Role / Timing Role: Current-controlled high-side switch managed by hot-swap controller IC (e.g., LTC4215). Use Value: 70 °C/W RθJA and 1.8 W PD allow robust operation under sustained 2 A loads without external heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7851DP-T1-GE3 | RDS(on) = 0.075 Ω @ VGS = -4.5 V; Micro8 package; lower threshold (-0.5 V typ) | Better suited for 3.3 V-only gate drive; slightly higher cost | Select when driving from 3.3 V microcontrollers without negative bias generation |
| DMG3415L-7 | RDS(on) = 0.055 Ω @ VGS = -4.5 V; SOT-23-6 package; smaller footprint but lower current rating (-2.0 A) | Limited to sub-2 A loads; not suitable for 3.6 A continuous operation | Choose only for ultra-space-constrained designs where current demand is ≤2 A |
Compared with Si7851DP-T1-GE3 and DMG3415L-7, IRF7606TR offers the best balance of 3.6 A current capability, -30 V rating, and Micro8 mechanical compatibility-making it optimal for mid-power portable load switching where both current headroom and board area are critical.
Availability
IRF7606TR is available at Aetrix Electronics and suitable for battery protection circuits, USB OTG load switches, synchronous buck converter high-side switches, and hot-swap controller back-end switches requiring stable component supply and long-term manufacturability.
Supply support for IRF7606TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.
IRF7606TR belongs to Infineon's legacy HEXFET Power MOSFET product line, designed specifically for high-efficiency, space-constrained DC power switching in consumer and portable electronics.
FAQ
Is IRF7606TR suitable for 3.3 V logic-level gate drive?
Yes. With a gate threshold voltage (VGS(th)) minimum of -1.0 V and guaranteed enhancement at VGS = -3.0 V, IRF7606TR fully turns on using standard 3.3 V microcontroller outputs referenced to its source. RDS(on) rises to 0.15 Ω at VGS = -4.5 V, still supporting efficient operation at moderate currents.
What is the maximum allowable junction temperature during pulsed operation?
The absolute maximum junction temperature is +150°C. Under pulsed conditions (≤300 µs width, ≤2% duty cycle), peak power dissipation may exceed the 1.8 W DC rating, provided transient thermal impedance limits junction temperature to ≤150°C - verified via Fig. 10 in the datasheet.
Does IRF7606TR have avalanche rating?
No. The datasheet does not specify rated unclamped inductive switching (UIS) or avalanche energy capability. Designers must implement external clamping (e.g., TVS diodes or RC snubbers) when switching inductive loads to prevent voltage overshoot beyond -30 V VDS.
Can IRF7606TR be used in parallel with identical units?
Yes, but with caution. Its negative temperature coefficient of RDS(on) promotes current sharing at elevated temperatures. However, layout symmetry, matched gate drive paths, and individual gate resistors are required to ensure balanced dynamic current distribution and avoid thermal runaway.
IRF7606TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 2.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 520 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7606TR FAQ
1.How can I place an order for IRF7606TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7606TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7606TR reliable?
The price and inventory of IRF7606TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7606TR is usually 5 days.
3.What payment methods are accepted for IRF7606TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7606TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7606TR?
IRF7606TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7606TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7606TR?
For technical support, including IRF7606TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7606TR requirements.
6.How does Aetrix verify that IRF7606TR is sourced from the original manufacturer or authorized distributors?
All IRF7606TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7606TR meets industry standards.
7.What is the process for return or replacement of IRF7606TR?
All IRF7606TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7606TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7606TR part is unused and in its original packaging.
Return procedure for IRF7606TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7606TR Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
