Infineon Technologies IRF7607

Overview

IRF7607 from International Rectifier is a trench-technology N-channel power MOSFET in Micro8™ package, rated for 20 V V_DS, 6.5 A continuous drain current at 4.5 V_GS, and 0.030 Ω R_DS(on) at V_GS = 4.5 V. It serves as a low-side load switch or synchronous rectifier in space-constrained DC-DC converters and portable power management circuits.

For engineers reviewing the IRF7607 datasheet, IRF7607 pinout, IRF7607 application, or IRF7607 equivalent, key selection criteria include its ultra-low on-resistance at logic-level gate drive, 1.1 mm profile enabling thin-profile PCB integration, and body diode recovery characteristics critical for high-frequency switching efficiency.

Technical Context

This MOSFET employs trench-gate silicon process to minimize conduction loss while maintaining rugged avalanche capability. Its gate threshold voltage (0.6–1.2 V) ensures reliable turn-on with 2.5 V and 3.3 V microcontroller outputs, and its 15 nC typical total gate charge supports efficient 1–2 MHz switching in buck converter topologies.

The integrated body diode exhibits 19–29 ns reverse recovery time and 13–20 nC Q_rr, making it suitable for synchronous rectification where diode conduction occurs during dead-time intervals. Thermal resistance R_θJA is 70 °C/W on FR-4, enabling 1.8 W dissipation at 25 °C ambient.

Key Specifications

Pinout & Package

IRF7607 uses the Micro8™ surface-mount package (2.95 × 3.05 mm footprint, <1.1 mm height), offering half the area of SO-8 and optimized for high-density PCB layouts in portable electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with Si2300DS and DMN2004LK-7, IRF7607 delivers optimal balance of ultra-low on-resistance, proven Micro8™ manufacturability, and robust body diode performance-making it ideal for cost-sensitive, high-volume portable power switches where 6.5 A capability and 1.1 mm height are design-critical.

Availability

IRF7607 is available at Aetrix Electronics and suitable for battery-powered load switching, USB power delivery switching, and point-of-load synchronous rectification requiring stable component supply and long-term production continuity.

Supply support for IRF7607 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, computing, and consumer applications.

The HEXFET® product line, including IRF7607, was engineered specifically for high-frequency, low-voltage DC-DC conversion-emphasizing low gate charge, fast switching, and compact packaging for space- and thermally constrained portable electronics.

FAQ

What is the maximum safe operating frequency for IRF7607 in a synchronous buck converter?

IRF7607 supports stable operation up to 2 MHz in synchronous buck topologies, validated by its 15 nC total gate charge, 11 ns rise time, and 16 ns fall time at 1 A load. At this frequency, gate drive losses remain below 15 mW with a 10 Ω series resistor, and body diode reverse recovery (19–29 ns) avoids significant overlap loss when properly timed.

Does IRF7607 require a gate resistor for ESD protection?

No external gate resistor is required solely for ESD protection-the device has ±12 V gate-to-source rating and built-in gate oxide robustness per JEDEC JS-001. However, a 5–10 Ω series resistor is recommended to dampen ringing during fast switching and prevent unintended oscillation when driven by low-impedance MCU pins or gate drivers.

Can IRF7607 be used in parallel configurations for higher current handling?

Yes, IRF7607 supports paralleling due to its positive temperature coefficient of R_DS(on) (see Fig 4), which promotes current sharing. For two devices, derate total current by 15% and ensure matched gate trace lengths (<1 mm difference) and shared source Kelvin connection to avoid imbalance from inductance mismatch.

Is the Micro8™ package compatible with standard SO-8 reflow profiles?

Yes-the Micro8™ package uses standard SnPb- or lead-free solder paste and conforms to IPC/JEDEC J-STD-020 moisture sensitivity level 1. Its thermal mass is lower than SO-8, so peak reflow temperature (260 °C max) and time above liquidus (60–90 s) must be verified per board stack-up, but no special profile modification is needed for typical FR-4 assemblies.