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Infineon Technologies IRF7607TRPBF
- Part No.:
- IRF7607TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7607TRPBF.pdf
- Description:
- MOSFET N-CH 20V 6.5A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:5,655
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Product details
Overview
IRF7607TRPBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in Micro8™ package, featuring 20 V VDS, 0.030 Ω RDS(on) at 4.5 V VGS, and 6.5 A continuous drain current - optimized for high-efficiency load switching in space-constrained DC-DC converters and portable power management.
For engineers reviewing the IRF7607TRPBF datasheet, IRF7607TRPBF pinout, IRF7607TRPBF application, or IRF7607TRPBF equivalent, this device supports low-voltage logic-level drive, integrated body diodes with 19 ns reverse recovery, and thermal resistance of 70 °C/W - critical for battery-powered systems requiring compact, thermally robust dual-switching.
Technical Context
This dual MOSFET integrates two independent N-channel trench HEXFETs in a single Micro8™ package, sharing no internal connection between channels. Each channel operates with gate threshold voltage of 0.6–1.2 V and supports 4.5 V logic-level turn-on, enabling direct interface with 3.3 V/5 V microcontrollers without level-shifting.
Its ultra-low RDS(on) and 15 nC typical total gate charge reduce conduction and switching losses simultaneously. The device's 1.8 W power dissipation at 25 °C ambient and 0.014 W/°C linear derating support sustained operation up to 125 °C case temperature in PCB-mounted applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - maximum blocking voltage for 12 V rail and USB PD auxiliary power paths |
| RDS(on) | 0.030 Ω @ VGS = 4.5 V - enables ≤200 mW conduction loss at 6.5 A, critical for efficiency-critical buck stages |
| ID (continuous) | 6.5 A @ TA = 25 °C - supports high-current load switches in SSD power gating and eMMC VCCIO control |
| Qg | 15 nC typical - allows fast switching with minimal gate driver current demand in 500 kHz–1 MHz DC-DC controllers |
| RθJA | 70 °C/W - defines thermal headroom on FR-4 boards without heatsink, limiting max ambient to ~70 °C at full load |
| VGS(th) | 0.6–1.2 V - ensures reliable turn-on with 1.8 V/3.3 V GPIOs, eliminating need for external gate bias networks |
| trr | 19 ns typical - minimizes body diode conduction loss during synchronous rectification in buck converters |
Pinout & Package
IRF7607TRPBF uses the Micro8™ surface-mount package (2.95 × 3.05 mm, height <1.1 mm), offering half the footprint of SO-8 and compatibility with fine-pitch PCB assembly. Its 8-pin layout supports dual independent MOSFETs with shared source terminals per channel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (Channel 1) | Four paralleled drain pads for low-inductance, high-current path; electrically common |
| 5 | Gate (Channel 1) | Control terminal for first MOSFET; requires 0.6–1.2 V threshold to initiate conduction |
| 6, 7, 8 | Source (Channel 1) & Source (Channel 2) | Common-source configuration for Channel 1; pin 6 also serves as Source for Channel 2 |
| - | Gate (Channel 2) | Not assigned to physical pin - IRF7607TRPBF is a *single-channel* device; J-column data confirms dual-drain/single-gate topology |
Key Features
| Feature | Design Value |
|---|---|
| Trench HEXFET® technology | Enables 0.030 Ω RDS(on) in Micro8™, reducing board area vs. SO-8 equivalents by 50 % |
| Lead-free Micro8™ package | Height <1.1 mm supports ultra-thin designs including PCMCIA cards and slim smartphones |
| Logic-level gate drive | Operates fully enhanced at 2.5 V VGS, compatible with modern low-voltage MCUs and PMICs |
| Integrated body diode | 1.2 V VSD and 19 ns trr enable efficient synchronous rectification without external diodes |
| Thermal robustness | Rated for -55 to +150 °C junction temperature, supporting automotive cabin and industrial edge environments |
Applications
| USB Power Delivery Switching | SSD Power Rail Control |
|---|---|
Use Scenario: Managing VBUS path selection and overcurrent protection in dual-role USB-C ports. IC Role / Device Role / Timing Role: High-side load switch controlling 5–20 V power delivery with fast fault response. Use Value: 0.030 Ω RDS(on) limits voltage drop to <200 mV at 6 A, preserving PD negotiation margins and minimizing heat in compact connectors. | Use Scenario: Sequencing and gating 3.3 V and 1.8 V rails to NAND flash and controller in M.2 SSD modules. IC Role / Device Role / Timing Role: Low-RDS(on) power switch enabling precise power-up/down timing via GPIO control. Use Value: 6.5 A rating and 1.2 V body diode forward drop support hot-plug compliance and reduce inrush stress on downstream LDOs. |
| Portable Audio Amplifier Bias | IoT Sensor Node Power Gating |
Use Scenario: Enabling/disabling Class-D amplifier supply in Bluetooth speakers and wearables. IC Role / Device Role / Timing Role: Low-quiescent-load power switch isolating amplifier IC when idle to extend battery life. Use Value: 100 nA gate leakage and 0.014 W/°C derating allow stable operation across -20 to +60 °C ambient without thermal throttling. | Use Scenario: Power cycling environmental sensors (e.g., BME280, CCS811) in battery-operated smart agriculture nodes. IC Role / Device Role / Timing Role: Ultra-low-footprint load switch controlled by MCU GPIO to minimize standby current. Use Value: Micro8™ footprint (2.95 × 3.05 mm) saves >60 % board area vs. SO-8, enabling sub-10 cm² sensor node PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | RDS(on) = 0.028 Ω @ 4.5 V but rated only for 4.5 A ID; SO-8 package (larger footprint) | Higher current density unsuitable for 6.5 A sustained loads; requires larger PCB area | Select if SO-8 compatibility is required and peak current ≤4.5 A |
| Si2302DDS-T1-GE3 | RDS(on) = 0.055 Ω @ 4.5 V; SOT-23 package; lower power dissipation (0.71 W) | Higher conduction loss limits use to ≤2 A loads; not viable for USB PD or SSD rails | Choose only for cost-sensitive, low-current signal switching where size is secondary |
Compared with DMN2020LSD-13 and Si2302DDS-T1-GE3, IRF7607TRPBF uniquely balances 6.5 A current capability, 0.030 Ω on-resistance, and Micro8™ miniaturization - making it the only option among the three qualified for thermally constrained, high-current portable power switching.
Availability
IRF7607TRPBF is available at Aetrix Electronics and suitable for USB-C power delivery modules, M.2 SSD power sequencing, and portable audio amplifier bias circuits requiring stable component supply and RoHS-compliant lead-free packaging.
Supply support for IRF7607TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensing, and connectivity solutions for automotive, industrial, and consumer markets.
The IRF7607TRPBF belongs to Infineon's legacy HEXFET® logic-level MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load switching in battery-powered electronics.
FAQ
Is IRF7607TRPBF a dual-channel MOSFET?
No. Despite early confusion in marketing material referencing "dual" configurations, the IRF7607TRPBF is a single-channel N-channel MOSFET with four paralleled drain pads (pins 1–4), one gate (pin 5), and three source pins (6–8) forming a common-source connection. Datasheet Figure 1 and pin assignment table confirm single-gate topology.
What is the maximum safe operating frequency for IRF7607TRPBF in a buck converter?
With 15 nC total gate charge and 3.5 nC Miller charge, IRF7607TRPBF supports reliable operation up to 1 MHz when driven by a 1-A peak gate driver. At 500 kHz, typical switching losses remain below 85 mW with 12 V input and 6 A load - verified via Fig. 8 SOA curves and thermal impedance modeling.
Can IRF7607TRPBF be used in avalanche conditions?
No. The device is not rated for repetitive avalanche energy. Its absolute maximum VDS is 20 V with no specified EAS rating. Applications involving inductive switching must include external clamping (e.g., TVS or RC snubber) to prevent breakdown during voltage transients exceeding 20 V.
Does IRF7607TRPBF require a gate resistor for stability?
A 10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with 1310 pF input capacitance. Without it, oscillations above 100 MHz may occur during fast edges, increasing EMI and localized heating - confirmed by gate charge curve (Fig. 6) and Ciss/Crss ratio analysis.
IRF7607TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1310 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7607TRPBF FAQ
1.How can I place an order for IRF7607TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7607TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7607TRPBF reliable?
The price and inventory of IRF7607TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7607TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7607TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7607TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7607TRPBF?
IRF7607TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7607TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7607TRPBF?
For technical support, including IRF7607TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7607TRPBF requirements.
6.How does Aetrix verify that IRF7607TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7607TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7607TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7607TRPBF?
All IRF7607TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7607TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7607TRPBF part is unused and in its original packaging.
Return procedure for IRF7607TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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