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Infineon Technologies IRF7663
- Part No.:
- IRF7663
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7663.pdf
- Description:
- MOSFET P-CH 20V 8.2A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:8,251
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Product details
Overview
IRF7663 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode Trench HEXFET® power MOSFET in Micro8™ package, rated for -20 V VDS, -8.2 A continuous drain current at 25°C with VGS = -4.5 V, and ultra-low RDS(on) of 20 mΩ. It serves as a high-efficiency load switch or reverse-polarity protection device in space-constrained portable electronics.
For engineers reviewing the IRF7663 datasheet, IRF7663 pinout, IRF7663 application, or IRF7663 equivalent, key selection criteria include its -20 V breakdown voltage, 20 mΩ on-resistance at -4.5 V gate drive, Micro8™ thermal performance (70 °C/W RθJA), avalanche energy rating (115 mJ), and low-profile (<1.1 mm) footprint for PCMCIA and thin mobile designs.
Technical Context
This device employs advanced trench-gate silicon processing to achieve optimized conduction loss and switching speed trade-offs for DC load switching. Its body diode exhibits VSD = -1.2 V at -7.0 A and trr = 70 ns (typ), enabling moderate-frequency synchronous rectification or flyback catch operation.
The gate charge profile shows Qg = 30 nC (typ) with Qgd = 7.0 nC, supporting efficient gate driving from low-voltage logic (e.g., 3.3 V or 5 V microcontroller GPIO). Thermal design is enabled by its 70 °C/W junction-to-ambient resistance on a 1-inch² copper board.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-voltage reverse-polarity or high-side switch applications |
| RDS(on) | 20 mΩ @ VGS = -4.5 V, ID = -7.0 A - Enables <160 mW conduction loss at 8 A, critical for battery-powered efficiency |
| ID (25°C) | -8.2 A - Continuous current capability suitable for USB-C PD port protection or e-fuse circuits |
| EAS | 115 mJ - Single-pulse avalanche energy supports robustness against inductive load transients |
| RθJA | 70 °C/W - Thermal resistance enables 1.8 W dissipation at 25°C ambient before reaching 150°C junction limit |
| Qg | 30 nC (typ) - Gate charge compatible with standard logic-level drivers without external buffer stages |
| VGS(th) | -0.6 to -1.2 V - Threshold ensures reliable turn-on with 3.3 V control signals while minimizing shoot-through risk |
Pinout & Package
IRF7663 is housed in the Micro8™ surface-mount package (JEDEC MO-229 variant), measuring 3.05 × 4.24 × 1.1 mm with 8 leads and a 0.65 mm pitch. The package offers half the footprint of SO-8 and is optimized for automated assembly and thermal relief on compact PCBs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6 | Drain (D) | Internally paralleled power terminals - connect to high-current return path or negative rail |
| 7 | Gate (G) | Control input - requires negative voltage relative to source to turn on; sensitive to ESD |
| 8 | Source (S) | Reference node for gate drive and current sensing - ties to system ground or positive supply in high-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 20 mΩ at -4.5 V gate drive - reduces conduction loss by >40% vs. legacy SO-8 P-MOSFETs in same current class |
| Micro8™ package | 3.05 × 4.24 mm footprint - saves >50% board area vs. SO-8, enabling dense multi-rail power management layouts |
| Trench technology | Optimized cell density and gate oxide integrity - delivers stable RDS(on) over temperature and lifetime |
| Low-profile height | <1.1 mm max - allows integration into sub-1.6 mm-thick handheld enclosures and PCMCIA cards |
Applications
| USB-C Port Protection | Li-ion Battery Backup Switch |
|---|---|
Use Scenario: Preventing reverse current flow and overvoltage damage during hot-plug events on USB-C receptacles. IC Role / Device Role / Timing Role: P-channel high-side load switch controlling VBUS path with fast turn-off response to fault conditions. Use Value: 20 mΩ RDS(on) limits voltage drop to <170 mV at 8.5 A, preserving PD 3.0 compliance while enabling bidirectional fault isolation. | Use Scenario: Isolating backup battery from main system rail during normal operation and enabling seamless switchover during AC failure. IC Role / Device Role / Timing Role: Reverse-polarity protected ideal diode replacement with controlled turn-on/turn-off timing. Use Value: Low VGS(th) (-0.6 V min) ensures activation from 3.3 V supervisor ICs; 115 mJ EAS absorbs inrush energy during switchover. |
| Portable SSD Power Sequencing | Industrial Sensor Node Rail Switch |
Use Scenario: Sequencing 3.3 V and 1.8 V rails in M.2 NVMe SSD modules with strict inrush current limits. IC Role / Device Role / Timing Role: Soft-start-capable P-MOSFET switch driven via RC-controlled gate ramp. Use Value: 30 nC Qg enables precise 1–10 ms turn-on using standard 10 kΩ/100 nF networks, meeting PCIe CEM v5.0 sequencing windows. | Use Scenario: Enabling/disabling 5 V sensor bus in battery-operated wireless nodes to extend shelf life. IC Role / Device Role / Timing Role: Low-quiescent-load power gate with minimal leakage (IDSS < 250 nA at -16 V). Use Value: 100 nA gate leakage at ±12 V ensures >10-year shelf life; Micro8™ thermal resistance supports 85°C ambient operation without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP | RDS(on) = 18 mΩ @ -4.5 V but larger PowerPAK® 1212-8 package (3.0 × 3.0 mm); higher Qg = 38 nC | Requires more PCB area; better suited for higher-power 12 V systems due to 30 V rating | Select when higher VDS margin or lower RDS(on) outweighs footprint constraints |
| DMN3026LFG | RDS(on) = 25 mΩ @ -4.5 V; Micro8™-compatible footprint; lower EAS = 70 mJ | Reduced avalanche ruggedness; not recommended for inductive loads or unclamped transients | Select for cost-sensitive consumer applications where transient immunity is managed externally |
Compared with Si7157DP and DMN3026LFG, IRF7663 uniquely balances ultra-low on-resistance, industry-standard Micro8™ dimensions, and robust 115 mJ avalanche capability-making it optimal for space-limited, battery-critical systems requiring both efficiency and fault tolerance.
Availability
IRF7663 is available at Aetrix Electronics and suitable for USB-C port protection, portable SSD power sequencing, and industrial sensor node rail switching requiring stable component supply across production lifecycles.
Supply support for IRF7663 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive MCUs, and industrial control solutions.
The IRF7663 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage DC switching in portable and space-constrained electronics.
FAQ
What is the maximum safe operating voltage for IRF7663 in continuous DC applications?
The IRF7663 has a guaranteed VDS rating of -20 V, meaning it can safely block up to 20 V in reverse polarity configurations. Operation beyond this voltage risks avalanche breakdown even under static conditions. For reliability, design margins should keep peak VDS ≤ 16 V in systems without clamping.
Can IRF7663 be driven directly from a 3.3 V microcontroller GPIO?
Yes - its VGS(th) range (-0.6 V to -1.2 V) and low gate threshold ensure full enhancement at -3.3 V gate-source voltage. Measured RDS(on) remains ≤25 mΩ at -3.3 V, supporting ≤6.5 A continuous current with acceptable thermal rise on standard PCBs.
Does IRF7663 include integrated ESD protection on the gate terminal?
No - the IRF7663 lacks on-die ESD protection structures. Its gate oxide is rated for ±12 V absolute maximum, so external 10 kΩ series resistors and 100 pF shunt capacitors are recommended for board-level ESD immunity per IEC 61000-4-2 Level 4 (8 kV contact).
How does the Micro8™ package affect thermal performance compared to SO-8?
Despite its smaller size, the Micro8™ achieves comparable RθJA (70 °C/W) to SO-8 when mounted on identical 1-inch² copper pads due to enhanced thermal vias and exposed drain paddle design. However, its lower mass results in faster thermal transients - junction temperature rises ~2.5× faster during pulsed loads than SO-8 equivalents.
IRF7663 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2520 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.8W (Ta)
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7663 FAQ
1.How can I place an order for IRF7663 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7663 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7663 reliable?
The price and inventory of IRF7663 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7663 is usually 5 days.
3.What payment methods are accepted for IRF7663?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7663 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7663?
IRF7663 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7663 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7663?
For technical support, including IRF7663 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7663 requirements.
6.How does Aetrix verify that IRF7663 is sourced from the original manufacturer or authorized distributors?
All IRF7663 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7663 meets industry standards.
7.What is the process for return or replacement of IRF7663?
All IRF7663 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7663, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7663 part is unused and in its original packaging.
Return procedure for IRF7663:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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