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Infineon Technologies IRF7663TR
- Part No.:
- IRF7663TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7663TR.pdf
- Description:
- MOSFET P-CH 20V 8.2A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:3,071
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Product details
Overview
IRF7663TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode Trench MOSFET in Micro8™ package, rated for -20 V VDS, -8.2 A continuous drain current at VGS = -4.5 V and 25°C, with RDS(on) = 0.020 Ω. It delivers ultra-low on-resistance in a low-profile (<1.1 mm), space-saving footprint ideal for high-density DC-DC load switching in portable power management.
For engineers reviewing the IRF7663TR datasheet, IRF7663TR pinout, IRF7663TR application, or IRF7663TR equivalent, key selection criteria include its negative-threshold gate drive compatibility, avalanche energy rating (115 mJ), thermal resistance (70 °C/W), and Micro8™ lead assignment for compact PCB layout verification.
Technical Context
This device operates as a single P-channel switch in high-side configuration, requiring gate drive below source potential. Its trench process enables stable RDS(on) over temperature (±0.01 V/°C V(BR)DSS tempco) and supports pulsed drain currents up to -66 A with defined SOA limits.
The integrated body diode exhibits VSD = -1.2 V at -7.0 A and fast recovery (trr = 70–105 ns, Qrr = 50–75 nC), enabling synchronous rectification and bidirectional current handling in buck converters and battery protection circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V - Maximum blocking voltage for low-voltage P-channel high-side switching |
| RDS(on) | 0.020 Ω @ VGS = -4.5 V, ID = -7.0 A - Enables <150 mW conduction loss at 8 A |
| ID (25°C) | -8.2 A - Continuous current capability with standard SOIC-level thermal pad mounting |
| EAS | 115 mJ - Single-pulse avalanche energy supports robustness against inductive turn-off transients |
| RθJA | 70 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper board, defining heatsinking needs |
| Qg | 30–45 nC - Total gate charge determines driver strength requirement for <1 µs switching |
| tr/tf | 100 ns / 172 ns - Rise/fall times enable efficient operation at 500 kHz–1 MHz switching frequencies |
Pinout & Package
IRF7663TR uses the Micro8™ surface-mount package (JEDEC MO-229 variant), measuring 3.20 × 4.24 mm with 0.65 mm pitch and height <1.1 mm. It features dual-drain, single-gate, dual-source terminal arrangement optimized for parallel drain current paths and reduced PCB trace inductance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four paralleled drain terminals - reduce current density and thermal resistance in high-current paths |
| 5, 8 | Source (S) | Two dedicated source terminals - provide low-inductance return path for gate drive and power loop |
| 6 | Gate (G) | Single gate input - compatible with standard logic-level P-channel drivers (VGS(th) = -0.6 to -1.2 V) |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.020 Ω @ -4.5 V enables >95% efficiency in 3.3 V/5 V load switches at 6 A |
| Micro8™ footprint | 50% smaller area than SO-8 - saves >20 mm² PCB real estate in space-constrained modules |
| Trench process technology | Improved threshold stability and lower gate charge vs planar MOSFETs for faster, more predictable switching |
| Low-profile package | <1.1 mm height allows integration into ultra-thin devices including PCMCIA cards and slim battery packs |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling battery discharge path with integrated body diode forward conduction. Use Value: RDS(on) = 0.020 Ω limits voltage drop to <160 mV at 8 A, preserving battery runtime and thermal margin. |
Use Scenario: Hot-swap control and fault isolation in USB-C PD 3.0 power path. IC Role / Device Role / Timing Role: Load switch enabling controlled inrush current and fast fault response via gate-driven turn-off. Use Value: 115 mJ avalanche rating withstands transient overvoltage events during plug insertion without clamping circuitry. |
| Point-of-Load DC-DC Converter | Industrial I/O Module Protection |
|
Use Scenario: Synchronous rectification in 5 V → 3.3 V buck converter for FPGA core supplies. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode, driven by controller's complementary output. Use Value: Body diode trr = 70 ns and Qrr = 50 nC minimize reverse-recovery losses and EMI generation. |
Use Scenario: Field-side short-circuit protection in 24 V digital output modules. IC Role / Device Role / Timing Role: High-side switch isolating load from supply during fault detection and diagnostics. Use Value: -20 V VDS rating accommodates 24 V nominal systems with 30% surge margin; SOA curve supports 100 ms overload hold. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.022 Ω @ -4.5 V; Micro8™ package; higher Qg (52 nC) | Higher gate charge increases driver loss; identical footprint and voltage rating | Prefer when tighter RDS(on) tolerance required; verify driver capability for higher Qg |
| DMG2307L-7 | RDS(on) = 0.035 Ω @ -4.5 V; SOT-23-6 package; lower current rating (-4.2 A) | Smaller package reduces thermal mass; unsuitable for >5 A continuous loads | Select only for space-limited, lower-current (<4 A) applications where Micro8™ assembly is unavailable |
Compared with Si7157DP-T1-GE3 and DMG2307L-7, IRF7663TR offers the lowest RDS(on) and highest continuous current in the Micro8™ form factor, making it optimal for thermally constrained, high-efficiency 6–8 A load switching where gate drive strength permits.
Availability
IRF7663TR is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, point-of-load DC-DC converters, and industrial I/O module protection requiring stable component supply and long-term manufacturability.
Supply support for IRF7663TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7663TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, space-constrained power switching in portable and industrial systems where low on-resistance and compact packaging are critical.
FAQ
What is the maximum operating junction temperature for IRF7663TR?
The IRF7663TR has a specified junction temperature range of -55°C to +150°C. Its absolute maximum continuous operating junction temperature is +150°C, validated under conditions defined in the SOA curve and thermal derating factor of 10 mW/°C above 25°C ambient. Operation beyond this limit risks permanent parametric shift or failure.
Can IRF7663TR be used in synchronous rectification mode?
Yes - its integrated body diode has characterized VSD = -1.2 V at -7.0 A and fast reverse recovery (trr = 70–105 ns, Qrr = 50–75 nC), enabling use as a synchronous rectifier in buck converters. Gate must be actively driven with complementary timing to avoid shoot-through, and dead-time must exceed tf (172 ns) plus propagation delay.
Is IRF7663TR RoHS-compliant and halogen-free?
Yes - IRF7663TR is manufactured per Infineon's standard RoHS-compliant and halogen-free specifications (per IEC 61249-2-21), with lead-free terminations and compliant packaging. The Micro8™ package uses matte tin plating and meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).
Does IRF7663TR require a gate resistor for safe operation?
A gate resistor is recommended to dampen ringing and control dV/dt during switching. Typical values range from 5 Ω to 22 Ω depending on driver strength and layout parasitics. The datasheet specifies td(on)/td(off) test conditions with RG = 6.2 Ω, confirming this value provides balanced speed and stability for most 3.3 V/5 V logic drivers.
IRF7663TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 5 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 2520 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7663TR FAQ
1.How can I place an order for IRF7663TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7663TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7663TR reliable?
The price and inventory of IRF7663TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7663TR is usually 5 days.
3.What payment methods are accepted for IRF7663TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7663TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7663TR?
IRF7663TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7663TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7663TR?
For technical support, including IRF7663TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7663TR requirements.
6.How does Aetrix verify that IRF7663TR is sourced from the original manufacturer or authorized distributors?
All IRF7663TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7663TR meets industry standards.
7.What is the process for return or replacement of IRF7663TR?
All IRF7663TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7663TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7663TR part is unused and in its original packaging.
Return procedure for IRF7663TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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