Infineon Technologies IRF7665S2TR1PBF

Overview

IRF7665S2TR1PBF from Infineon Technologies is a 100 V, 14.4 A N-channel enhancement-mode MOSFET in DirectFET™ S2 package, optimized for Class-D audio amplifier output stages. It delivers 51 mΩ R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and 38 nC reverse recovery charge, enabling high-efficiency, low-THD, low-EMI operation in compact, heatsink-free 100 W/channel 8 Ω designs.

For engineers reviewing the IRF7665S2TR1PBF datasheet, IRF7665S2TR1PBF pinout, IRF7665S2TR1PBF application, or IRF7665S2TR1PBF equivalent, key selection criteria include its DirectFET™-specific thermal performance (R_θJ-PCB = 1.4 °C/W), dual-sided cooling capability, and Class-D–optimized Q_g/Q_rr/R_DS(on) trade-offs under 400 kHz switching at ±45 V bus.

Technical Context

This MOSFET employs trench-gate silicon process technology to minimize conduction and switching losses simultaneously. Its low 3.5 Ω internal gate resistance and 30 pF Crss reduce Miller-induced shoot-through risk, while the 115 pF C_oss(eff) supports clean voltage transitions during fast dV/dt switching in half-bridge Class-D outputs.

The device integrates a robust body diode with 33 ns trr and 1.3 V V_SD at 8.9 A, enabling reliable synchronous rectification and unclamped inductive energy handling up to 160 mJ at 8.9 A. Thermal design leverages direct-drain top-side and bottom-side copper contact via DirectFET™ metal can structure.

Key Specifications

Pinout & Package

IRF7665S2TR1PBF uses the DirectFET™ S2 package: a leadless, metal-can, double-sided thermal interface package measuring 4.8 mm × 3.8 mm × 0.9 mm. The drain is electrically and thermally connected to both top and bottom metal surfaces; gate and source are soldered to PCB pads on the perimeter.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Compared with IRF7759L2TR1PBF, IRF7665S2TR1PBF offers superior EMI control and smaller footprint for ≤100 W/channel, while STW48N60M2 introduces unacceptable THD degradation due to unoptimized body diode recovery in audio switching.

Availability

IRF7665S2TR1PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, automotive infotainment systems, and professional stage monitor power stages requiring stable component supply and long-term production continuity.

Supply support for IRF7665S2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This MOSFET belongs to Infineon's DirectFET™ Class-D Audio portfolio, engineered specifically for high-efficiency, low-EMI, thermally constrained audio output stages - not general-purpose power switching.

FAQ

What is the maximum continuous power dissipation for IRF7665S2TR1PBF on a standard 2-layer PCB?

At T_C = 100 °C, the device sustains 58 W continuous power dissipation. With R_θJ-PCB = 1.4 °C/W and ambient T_A = 25 °C, this corresponds to ~100 W/channel operation into 8 Ω when using dual-sided copper and proper thermal vias - verified per AN-1035 layout guidelines and test data on 1-in² Cu board.

Can IRF7665S2TR1PBF be used in synchronous rectification mode?

Yes - its body diode exhibits 33 ns reverse recovery time and 1.3 V forward drop at 8.9 A, making it suitable for synchronous rectification in Class-D output filters. However, external gate control is required since the intrinsic diode lacks independent turn-on capability; timing must align with complementary PWM signals to avoid shoot-through.

Is the DirectFET™ S2 package compatible with standard reflow soldering processes?

Yes - it is qualified for lead-free reflow up to 260 °C peak temperature per J-STD-020. Successful assembly requires strict adherence to AN-1035 stencil design (0.12 mm thickness, 1:1 area ratio), substrate copper balancing, and vapor-phase or convection profile with ramp rate ≤3 °C/s and soak at 150–180 °C for 90–120 s before peak.

How does the low Q_rr of 38 nC improve THD in Class-D amplifiers?

Low Q_rr minimizes stored charge in the body diode during freewheeling, reducing voltage spikes and timing asymmetry during cross-conduction intervals. This directly lowers harmonic distortion - especially 2nd and 3rd order - measured as THD+N <0.05 % at full power in reference designs operating at 400 kHz with ±45 V rails.