Infineon Technologies IRF7665S2TRPBF

Overview

IRF7665S2TRPBF from Infineon Technologies is a 100 V, 14.4 A N-channel enhancement-mode MOSFET in DirectFET® S2 package, optimized for Class-D audio amplifier output stages. It delivers 51 mΩ R_DS(on) at V_GS = 10 V, 8.3 nC total gate charge, and 38 nC reverse recovery charge, enabling high-efficiency switching with low THD and EMI in compact, heatsink-free 100 W/channel (8 Ω) designs.

For engineers reviewing the IRF7665S2TRPBF datasheet, IRF7665S2TRPBF pinout, IRF7665S2TRPBF application, or IRF7665S2TRPBF equivalent, key selection criteria include its DirectFET®-specific thermal performance (R_θJ-Can = 5.0 °C/W), dual-sided cooling capability, low Q_rr/Q_g ratio, and compatibility with standard SMT reflow profiles up to 260 °C.

Technical Context

This MOSFET employs trench-gate silicon process technology to minimize conduction and switching losses simultaneously. Its internal gate resistance of 3.5 Ω and optimized body diode (t_rr = 33 ns, Q_rr = 38 nC) reduce voltage ringing and cross-conduction during hard-switching transitions typical in Class-D half-bridge topologies.

The DirectFET® S2 package integrates drain-connected copper clips on both top and bottom surfaces, achieving R_θJ-PCB = 1.4 °C/W when mounted on metal-core PCBs. This enables stable operation at T_J = 175 °C with no external heatsink under 100 W/channel conditions at ±45 V bus and 400 kHz switching frequency.

Key Specifications

Pinout & Package

IRF7665S2TRPBF uses the DirectFET® S2 surface-mount package (4.75 × 3.70 × 0.98 mm), featuring top-side drain (D), bottom-side source (S), and side-mounted gate (G) terminals. The package enables dual-sided thermal management and eliminates bond wire inductance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio amplifier applications.

Compared with IRF7755L2TRPBF and STW48N65M5, the IRF7665S2TRPBF uniquely combines 100 V rating, ultra-low Q_g/Q_rr, and DirectFET® thermal architecture-making it the only option capable of delivering 100 W/channel without heatsink while meeting THD <0.05 % and CISPR-25 Class 5 EMI limits.

Availability

IRF7665S2TRPBF is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and professional audio mixers requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF7665S2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET® product line was developed specifically for high-frequency, high-efficiency power conversion in audio, computing, and telecom applications-prioritizing low parasitic inductance, dual-sided thermal extraction, and SMT manufacturability.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRF7665S2TRPBF supports 10.2 A continuous drain current at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 14.4 A rating at 25 °C, based on R_θJ-Can = 5.0 °C/W and T_J(max) = 175 °C. Operation above this current requires active cooling or reduced ambient temperature.

Is the IRF7665S2TRPBF pin-compatible with standard SO-8 MOSFETs?

No. The IRF7665S2TRPBF uses the DirectFET® S2 package, which has a unique 4.75 × 3.70 mm footprint with top-side drain and bottom-side source pads-not compatible with SO-8 land patterns. Layout requires dedicated stencil design per AN-1035, including 0.17 mm aperture thickness and specific copper balancing for thermal uniformity.

Does this MOSFET require a gate resistor for stability in Class-D operation?

Yes. Due to its ultra-low gate-drain inductance (<0.3 nH) and high dV/dt capability, a 4.7 Ω to 6.8 Ω non-inductive gate resistor is required between driver output and gate terminal to suppress high-frequency oscillation. Values outside this range risk instability or excessive switching loss, as confirmed by Infineon's evaluation board design (EVAL-IRF7665S2).

Can the IRF7665S2TRPBF be used in synchronous rectification applications?

No. While it contains an integral body diode, the IRF7665S2TRPBF is optimized for unidirectional switching in Class-D output stages-not bidirectional conduction or zero-voltage switching. Its Q_rr and t_rr are tuned for fast turn-off in hard-switched audio, not soft-recovery in SR topologies. Use dedicated synchronous rectifier MOSFETs (e.g., IRF7832) instead.