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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7701TRPBF

Name: IRF7701TRPBF
Brand: Infineon Technologies
SKU: IRF7701TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7701TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: IRF7701TRPBF.pdf

Description:: MOSFET P-CH 12V 10A 8TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7701TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSSOP-8 package, designed for high-efficiency load switching in portable power management. It delivers 10 A continuous drain current at V_GS = −4.5 V, with R_DS(on) as low as 11 mΩ, −12 V V_DSS, and operates across −55 °C to +150 °C junction temperature range - ideal for battery protection circuits in ultra-thin consumer electronics.

For engineers reviewing the IRF7701TRPBF datasheet, IRF7701TRPBF pinout, IRF7701TRPBF application, or IRF7701TRPBF equivalent, key selection criteria include its low-profile (<1.1 mm) TSSOP-8 footprint, body diode recovery performance (t_rr = 52–78 ns), gate charge (Q_g = 69–100 nC), and thermal resistance (R_θJA = 83 °C/W on 1-inch² copper board).

Technical Context

This P-channel MOSFET operates in enhancement mode with gate threshold voltage (V_GS(th)) between −0.45 V and −1.2 V, enabling direct logic-level control from 3.3 V or 5 V microcontrollers when used in high-side switch configurations. Its low R_DS(on) at −2.5 V (15 mΩ @ −8.5 A) supports efficient operation in partial-gate-drive scenarios.

The device integrates a fast-recovery body diode (V_SD = −1.2 V @ −1.5 A, t_rr = 52 ns typ.) and exhibits strong thermal stability - normalized R_DS(on) drift is <2% over −55 °C to +125 °C - making it suitable for thermally constrained battery disconnect and USB port power-switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	−12 V - supports full compatibility with single-cell Li-ion (up to 4.2 V) and dual-cell NiMH (up to 3.0 V per cell) battery systems without derating.
R_DS(on) max	11 mΩ @ V_GS = −4.5 V, I_D = −10 A - enables ≤110 mW conduction loss at 10 A, critical for thermal budget in sealed portable enclosures.
I_D continuous	±10 A @ T_A = 25 °C - sufficient for USB-C PD 3.0 sink-side load switches and smart e-fuse implementations up to 5 V/3 A.
Q_g	69–100 nC - determines gate drive energy requirement; compatible with low-power GPIOs via 100 Ω series resistor for <1 µs turn-on in battery cutoff.
R_θJA	83 °C/W - measured on 1-inch² copper board; allows ~1.2 W dissipation before reaching 150 °C junction limit at 25 °C ambient.
t_rr	52–78 ns - ensures minimal shoot-through risk and reduced EMI in synchronous buck or OR-ing configurations with external N-channel counterparts.

Pinout & Package

TSSOP-8 package (JEDEC MO-153AA), 3.0 × 4.4 × 1.05 mm, 0.65 mm pitch, surface-mount, lead-free, low-profile (<1.1 mm height). Thermal pad on underside not electrically connected; no exposed drain pad.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals reduce package inductance and improve current sharing; connects directly to high-current PCB pour for battery or load path.
5, 6, 7, 8	Source (S)	Four parallel source terminals provide low-impedance return path; tied to system ground or battery negative in high-side switch layouts.
4	Gate (G)	Single gate input located adjacent to drain pins; requires RC snubber (e.g., 10 Ω + 100 pF) when driving inductive loads to suppress ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	11 mΩ @ −4.5 V enables >98% efficiency in 5 V/10 A load switch with <0.5 W total loss.
TSSOP-8 footprint	45% smaller than SO-8 - saves ≥12 mm² PCB area, essential for PCMCIA, SSD, and wearable form factors.
Logic-level gate drive	V_GS(th) down to −0.45 V allows direct interface with 1.8 V/3.3 V I/O without level-shifting circuitry.
Robust body diode	t_rr = 52 ns and Q_rr = 53 nC support clean reverse recovery in OR-ing and hot-swap applications.

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Prevents over-discharge and short-circuit damage in single-cell Li-ion packs by disconnecting load when voltage drops below 2.8 V or current exceeds 12 A.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET controlled by dedicated fuel gauge IC or microcontroller GPIO; acts as fast-acting electronic fuse with <100 ns response.

Use Value: Low R_DS(on) minimizes voltage drop during normal operation (≤42 mV @ 3.8 A), preserving battery runtime and state-of-charge accuracy.

Use Scenario: Enables/disables VBUS power path in USB-C receptacles supporting 5 V/3 A or programmable power supply (PPS) negotiation.

IC Role / Device Role / Timing Role: Load switch placed between upstream power source and downstream port controller; driven by CC logic signal with soft-start timing.

Use Value: Gate charge profile supports controlled slew rate (dV/dt ≈ 0.5 V/µs), meeting USB Type-C specification for inrush current limiting (<50 mA).

Smart Card Power Control

PCMCIA Slot Power Management

Use Scenario: Supplies regulated 3.3 V or 5 V to ISO 7816-compliant smart cards only during active communication, reducing standby leakage.

IC Role / Device Role / Timing Role: P-channel high-side switch controlled by secure element or host processor; integrated body diode blocks reverse current during card insertion/removal.

Use Value: −12 V rating provides 2× margin against transient spikes on shared bus lines; low profile (<1.1 mm) fits within 1.2 mm card slot height envelope.

Use Scenario: Powers PCMCIA Type II peripherals (e.g., Wi-Fi, modem cards) only after host enumeration and voltage ramp verification.

IC Role / Device Role / Timing Role: Primary load switch in 3.3 V/5 V dual-rail power sequencer; coordinated with enable signals from PCMCIA controller ASIC.

Use Value: Four-source and four-drain terminals reduce trace inductance, suppressing voltage overshoot during hot-plug events per JEDEC JESD22-B111.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 12.5 mΩ @ −4.5 V; higher Q_g (110 nC); TSSOP-8 with exposed thermal pad.	Requires thermal pad soldering for rated 10 A; better thermal performance but needs additional layout effort.	Prefer when board-level thermal management includes thermal vias under exposed pad.
DMG2307L-7	R_DS(on) = 28 mΩ @ −4.5 V; lower V_DSS (−20 V); SOT-23-6 package (smaller, lower current).	Limited to ≤3.5 A continuous; unsuitable for 10 A battery cutoff but fits space-constrained 1 A auxiliary rails.	Select only for sub-4 A applications where PCB area is more critical than conduction loss.

Compared with Si7851DP-T1-GE3 and DMG2307L-7, the IRF7701TRPBF offers the best balance of ultra-low R_DS(on), industry-standard TSSOP-8 compatibility without thermal pad dependency, and proven robustness in battery disconnect duty cycles exceeding 10⁵ operations.

Availability

IRF7701TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and PCMCIA slot power management requiring stable component supply and long-term industrial availability.

Supply support for IRF7701TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

The IRF7701TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-density, low-voltage DC power switching in portable and space-constrained applications where thermal efficiency and footprint reduction are primary design drivers.

FAQ

What is the maximum safe operating voltage for IRF7701TRPBF in continuous DC operation?

The absolute maximum drain-to-source voltage (V_DSS) is −12 V with V_GS = 0 V and I_D = −250 µA. Operation above this rating risks avalanche breakdown and permanent gate oxide damage. Derating is required above 85 °C ambient due to reduced breakdown voltage temperature coefficient (−6 mV/°C).

Can IRF7701TRPBF be used in synchronous rectification topologies?

No - IRF7701TRPBF is a P-channel MOSFET optimized for high-side switching, not synchronous rectification. Its body diode forward voltage (−1.2 V) and reverse recovery characteristics are not tuned for high-frequency freewheeling; use dedicated N-channel synchronous rectifiers like IRF7832TRPBF instead.

Does IRF7701TRPBF require a gate pull-up resistor in high-side switch configuration?

Yes - a gate pull-up resistor (typically 10–100 kΩ to V_IN) is mandatory to ensure the MOSFET remains off during MCU reset or floating control states. Without it, gate capacitance can retain charge, causing unintended conduction and potential load damage.

Is the TSSOP-8 package of IRF7701TRPBF RoHS-compliant and lead-free?

Yes - IRF7701TRPBF is marked "PbF" (lead-free) and complies with RoHS Directive 2011/65/EU. The finish is matte tin, and the device meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30 °C/60% RH.

IRF7701TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 10A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 10A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 5050 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

IRF7701TRPBF FAQ

1.How can I place an order for IRF7701TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7701TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7701TRPBF reliable?

The price and inventory of IRF7701TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7701TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7701TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7701TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7701TRPBF?

IRF7701TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7701TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7701TRPBF?

For technical support, including IRF7701TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7701TRPBF requirements.

6.How does Aetrix verify that IRF7701TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7701TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7701TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7701TRPBF?

All IRF7701TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7701TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7701TRPBF part is unused and in its original packaging.

Return procedure for IRF7701TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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