Infineon Technologies IRF7702TRPBF

Overview

IRF7702TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel TSSOP-8 packaged power MOSFET designed for low-voltage load switching and battery protection circuits. It features -12 V V_DS, 8.0 A continuous drain current at -4.5 V V_GS, 14 mΩ R_DS(on) at -4.5 V, and ultra-low profile (<1.1 mm), enabling use in space-constrained portable electronics.

For engineers reviewing the IRF7702TRPBF datasheet, IRF7702TRPBF pinout, IRF7702TRPBF application, or IRF7702TRPBF equivalent, key selection criteria include its -1.8 V gate threshold rating, 54 nC total gate charge, body diode reverse recovery time of 58 ns, and thermal resistance of 83 °C/W - all critical for high-efficiency, high-density DC-DC and power-path designs.

Technical Context

This device operates as a single P-channel enhancement-mode MOSFET with integrated body diode, optimized for synchronous rectification and reverse polarity protection in 3.3 V/5 V systems. Its -1.2 V typical gate threshold voltage enables reliable turn-on from low-voltage logic drivers, while the 0.014 Ω R_DS(on) at -4.5 V V_GS minimizes conduction loss in battery-powered applications.

The TSSOP-8 package delivers 45% smaller footprint than SO-8 and supports surface-mount assembly with JEDEC-compliant lead-free finish. Thermal performance is characterized by 83 °C/W junction-to-ambient resistance on 1-inch² copper board, and safe operating area extends to 70 A pulsed drain current with 300 µs pulse width limit.

Key Specifications

Pinout & Package

TSSOP-8 (Thin Shrink Small Outline Package), 8-pin, lead-free, low-profile (<1.1 mm), JEDEC MO-153 compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with Si7157DP-T1-GE3 and DMG1012T-7, IRF7702TRPBF uniquely balances ultra-low profile, 8 A current capability, and 14 mΩ R_DS(on) in TSSOP-8 - making it optimal for mid-power portable applications where height, footprint, and efficiency are simultaneously constrained.

Availability

IRF7702TRPBF is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, portable display backlighting, and DC-DC converter synchronous rectification requiring stable component supply and long-term industrial availability.

Supply support for IRF7702TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF7702TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in consumer and portable electronics where space, thermal, and logic-level compatibility are critical.

FAQ

What is the maximum allowable gate-to-source voltage for IRF7702TRPBF?

The absolute maximum V_GS is ±8.0 V. Exceeding this risks permanent gate oxide damage. In practice, gate drive should be limited to -4.5 V for optimal R_DS(on) and reliability, as specified in the datasheet's electrical characteristics table under R_DS(on) test conditions. The -1.2 V typical V_GS(th) ensures turn-on with 1.8 V logic, but full enhancement requires ≥-2.5 V.

Does IRF7702TRPBF have an integrated ESD protection diode?

No - IRF7702TRPBF does not include on-die ESD protection circuitry. Its gate oxide is rated for human-body-model (HBM) ESD per JEDEC JESD22-A114, but external gate protection (e.g., 10 kΩ series resistor + 12 V Zener clamp) is required in automated handling and PCB assembly to prevent gate rupture from static discharge.

Can IRF7702TRPBF be used in parallel for higher current capacity?

Yes, but with strict layout constraints: matched gate drive impedance, symmetrical PCB trace lengths, and shared thermal plane. The device's positive temperature coefficient of R_DS(on) (see Fig 12) provides inherent current sharing stability above 25°C. However, parallel operation beyond 12 A total requires derating due to thermal coupling and gate charge mismatch - verified via thermal imaging per application note AN-1084.

Is the exposed pad on the TSSOP-8 package electrically connected?

Yes - the exposed thermal pad (Pin 8) is internally connected to the drain terminal. It must be soldered to a dedicated PCB copper pour for thermal dissipation and electrical grounding of the drain node. Failure to connect it reduces R_θJA performance by >30% and risks thermal runaway under sustained 8 A loads.