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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7703TRPBF

Name: IRF7703TRPBF
Brand: Infineon Technologies
SKU: IRF7703TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7703TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: IRF7703TRPBF.pdf

Description:: MOSFET P-CH 40V 6A 8TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7703TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in TSSOP-8 package, rated for -40 V V_DS, 28 mΩ R_DS(on) at V_GS = -10 V and I_D = -6.0 A, with low-profile (<1.2 mm) footprint ideal for space-constrained battery management and load switching in portable electronics.

For engineers reviewing the IRF7703TRPBF datasheet, IRF7703TRPBF pinout, IRF7703TRPBF application, or IRF7703TRPBF equivalent, key selection criteria include verified -40 V drain-source rating, 28 mΩ on-resistance at -10 V gate drive, thermal resistance of 83 °C/W, body diode forward voltage of -1.2 V at -1.5 A, and TSSOP-8 lead-free packaging compliance.

Technical Context

This device operates as a high-efficiency, low-voltage P-channel switch with gate threshold voltage between -1.0 V and -3.0 V, enabling direct logic-level control from 3.3 V or 5 V microcontrollers. Its 41 nC total gate charge and 16 nC Miller charge support moderate-speed switching in DC-DC converters and power OR-ing circuits.

The integrated body diode exhibits 34 ns reverse recovery time and 56 nC reverse recovery charge at 25 °C, supporting synchronous rectification and bidirectional current handling in compact power rails where layout area is constrained by TSSOP-8's 45% smaller footprint versus SO-8.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for negative-rail high-side switching
R_DS(on)	28 mΩ @ V_GS = -10 V, I_D = -6.0 A - Low conduction loss enabling <170 mW dissipation at full current
I_D (25°C)	-6.0 A - Continuous drain current capability with standard PCB copper area cooling
Q_g	41 nC (typ) - Gate drive energy requirement for 100 kHz switching with <1 W driver loss
R_θJA	83 °C/W - Thermal resistance limiting max ambient temperature to ~70 °C at full load on 1-in² Cu board
V_SD	-1.2 V @ I_S = -1.5 A - Forward voltage of integrated body diode for reverse-current path in load-switching
t_rr	34 ns (typ) - Fast body diode recovery enabling use in synchronous buck topologies without excessive shoot-through risk

Pinout & Package

TSSOP-8 (PD-96026A), surface-mount, lead-free, low-profile (<1.2 mm), 45% smaller footprint than SO-8.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection for P-channel operation; tied internally to exposed pad for thermal conduction
5	Gate	Control terminal requiring -10 V for full enhancement; threshold range -1.0 V to -3.0 V enables 3.3 V logic compatibility
6, 7, 8	Drain	Main current-carrying terminal; electrically connected to exposed thermal pad for enhanced heat dissipation

Key Features

Feature	Design Value
Ultra-low R_DS(on)	28 mΩ at -10 V gate drive - reduces I²R losses by >30% vs. comparable -40 V P-MOSFETs in same package
TSSOP-8 footprint	45% smaller area than SO-8 - enables dense PCB layouts in PCMCIA cards and ultra-thin portable devices
Low profile height	<1.2 mm - fits under mechanical shields and within 1.6 mm board stack-ups without interference
Lead-free construction	RoHS-compliant, Pb-free plating - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow processing

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel load switch controlling battery discharge path with fast fault response.

Use Value: 28 mΩ R_DS(on) limits voltage drop to <170 mV at 6 A, preserving battery runtime and enabling accurate coulomb counting.

Use Scenario: Hot-swap control for USB Type-C power path with 5 V/3 A capability.

IC Role / Device Role / Timing Role: Load switch isolating downstream ports during plug insertion/removal.

Use Value: -1.2 V body diode forward voltage ensures minimal forward drop during reverse-current events, reducing thermal stress during hot-plug transients.

PCMCIA Card Power Rail

Industrial Sensor Node Power Gating

Use Scenario: Compact power sequencing in legacy PCMCIA expansion cards with strict height constraints.

IC Role / Device Role / Timing Role: Low-profile P-MOSFET enabling <1.2 mm board clearance while delivering 6 A peak load current.

Use Value: TSSOP-8 package allows full functionality within 1.6 mm total thickness, meeting PCMCIA mechanical spec without custom heatsinking.

Use Scenario: Duty-cycled power gating for wireless sensor nodes operating on coin-cell batteries.

IC Role / Device Role / Timing Role: Ultra-low leakage (-100 nA gate reverse leakage) minimizes standby current in sleep mode.

Use Value: IDSS ≤ 1 µA at -40 V ensures <1 µA system quiescent current, extending 10-year battery life targets in remote deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 32 mΩ @ -4.5 V; higher gate charge (52 nC); SO-8 package	Larger footprint; requires stronger gate driver for same switching speed	Preferred when SO-8 compatibility or higher V_GS margin needed
DMG2305UVT-7	R_DS(on) = 42 mΩ @ -4.5 V; lower V_DS (-20 V); SOT-23-6 package	Lower voltage rating; limited to 20 V systems; smaller current capacity (4.5 A)	Selected for cost-sensitive, low-power 3.3 V logic-controlled switches

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7703TRPBF delivers superior R_DS(on) per unit area and optimal thermal performance in thin-profile designs, making it the preferred choice for space- and efficiency-critical -40 V load switching.

Availability

IRF7703TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, PCMCIA card power rails, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.

Supply support for IRF7703TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The HEXFET® Power MOSFET product line-originally developed by International Rectifier and now part of Infineon-is engineered for high-efficiency, ruggedized switching in battery-powered and space-constrained systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7703TRPBF supports -4.7 A continuous drain current at T_A = 70°C with V_GS = -10 V, based on its 0.96 W power dissipation limit and 83 °C/W junction-to-ambient thermal resistance. This rating assumes mounting on a 1-inch square copper PCB with no forced airflow.

Does this MOSFET require a gate resistor for safe switching?

A gate resistor is recommended to control dV/dt and prevent ringing during turn-on/off. With 41 nC total gate charge and typical driver output impedance, a 10–47 Ω series resistor balances switching speed and EMI, especially given its 16 nC Miller charge that can cause unintended turn-on in high-dV/dt environments.

Can IRF7703TRPBF be used in synchronous rectification?

Yes-the device's 34 ns reverse recovery time and 56 nC Q_rr allow use as a synchronous rectifier in low-voltage DC-DC converters up to ~500 kHz, provided gate drive timing avoids shoot-through and the body diode's -1.2 V forward drop is acceptable for the application's efficiency target.

Is the exposed thermal pad electrically connected to any pin?

The exposed pad on the underside of the TSSOP-8 package is internally connected to the source terminals (pins 1–4). It must be soldered to a large copper pour for thermal performance and should be grounded in most P-channel high-side configurations to minimize noise coupling and improve ESD robustness.

IRF7703TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 28mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 62 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

IRF7703TRPBF FAQ

1.How can I place an order for IRF7703TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7703TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7703TRPBF reliable?

The price and inventory of IRF7703TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7703TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7703TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7703TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7703TRPBF?

IRF7703TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7703TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7703TRPBF?

For technical support, including IRF7703TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7703TRPBF requirements.

6.How does Aetrix verify that IRF7703TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7703TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7703TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7703TRPBF?

All IRF7703TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7703TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7703TRPBF part is unused and in its original packaging.

Return procedure for IRF7703TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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