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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7704TRPBF

Name: IRF7704TRPBF
Brand: Infineon Technologies
SKU: IRF7704TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7704TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: IRF7704TRPBF.pdf

Description:: MOSFET P-CH 40V 4.6A 8TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7704TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET in TSSOP-8 package, rated for -40 V V_DS, 4.6 A continuous drain current at -10 V V_GS, and 46 mΩ R_DS(on) under those conditions. It serves as a low-side load switch or battery protection device in portable power management circuits.

For engineers reviewing the IRF7704TRPBF datasheet, IRF7704TRPBF pinout, IRF7704TRPBF application, or IRF7704TRPBF equivalent, key selection criteria include its ultra-low on-resistance at low gate drive (-4.5 V), compact TSSOP-8 footprint (45% smaller than SO-8), and integrated body diode with 29 ns reverse recovery time for synchronous buck or OR-ing applications.

Technical Context

This MOSFET employs planar HEXFET® process technology to achieve high cell density and low specific on-resistance. Its gate threshold voltage range of -1.0 V to -3.0 V enables reliable turn-on with standard logic-level control signals down to -4.5 V.

The device features a thermally enhanced TSSOP-8 package with 83 °C/W junction-to-ambient thermal resistance and supports pulsed drain currents up to -19 A. Its body diode exhibits -1.2 V forward voltage at -1.5 A and 29 ns typical reverse recovery time, suitable for high-frequency switching topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - maximum blocking voltage for battery-side high-side or low-side switching in 12 V/24 V systems
R_DS(on)	46 mΩ @ V_GS = -10 V, I_D = -4.6 A - enables <100 mW conduction loss at 2 A load current
I_D (cont)	-4.6 A @ T_A = 25°C - supports sustained load switching in handheld devices and PCMCIA cards
Q_g	25 nC (typ) - determines gate drive energy requirement for 500 kHz switching in DC-DC converters
V_GS(th)	-1.0 to -3.0 V - ensures robust turn-on with 3.3 V or 5 V logic-compatible gate drivers
t_rr	29 ns (typ) - minimizes dead-time losses and EMI in synchronous rectification
R_θJA	83 °C/W - defines thermal derating slope (12 mW/°C) when mounted on 1 in² copper PCB

Pinout & Package

TSSOP-8 package: 3 mm × 4.4 mm footprint, <1.1 mm profile, surface-mount, lead-free, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection for P-channel operation; internally bonded to exposed pad for thermal conduction
5, 6, 7, 8	Drain	Main current-carrying terminal; connected to internal die backside for low-inductance power path
G	Gate	Control terminal requiring ≤ ±20 V bias; 25 nC total gate charge dictates driver strength requirement

Key Features

Feature	Design Value
Ultra-low R_DS(on)	46 mΩ @ -10 V - reduces I²R losses by >30% vs. legacy SO-8 P-MOSFETs at same current
TSSOP-8 footprint	3 × 4.4 mm - saves 45% board area over SO-8, critical for space-constrained portable designs
Low-profile height	<1.1 mm - enables integration into sub-1.6 mm-thick consumer electronics and PCMCIA modules
Fast body diode	t_rr = 29 ns - supports >1 MHz synchronous rectification without external Schottky
Lead-free & RoHS	Halogen-free, Pb-free terminations - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side P-MOSFET switch controlling discharge path; activated by protection IC's gate drive signal.

Use Value: 46 mΩ R_DS(on) limits voltage drop to <92 mV at 2 A, preserving battery runtime and thermal margin.

Use Scenario: Hot-swap power enable/disable for USB peripheral ports in laptops and docking stations.

IC Role / Device Role / Timing Role: Load switch isolating VBUS from downstream circuitry during insertion/removal events.

Use Value: Fast 29 ns body diode recovery prevents bus voltage sag during dynamic load transients.

PCMCIA Card Power Control

Portable Display Backlight Dimming

Use Scenario: Inrush current limiting and power sequencing for PCMCIA Type II cards in industrial handhelds.

IC Role / Device Role / Timing Role: High-side switch (with charge pump) or low-side switch managing 3.3 V/5 V card supply rails.

Use Value: TSSOP-8's <1.1 mm height fits within 1.6 mm card envelope while delivering 4.6 A continuous current.

Use Scenario: PWM-controlled current sink for white LED strings in medical handheld displays.

IC Role / Device Role / Timing Role: Synchronous rectifier in boost converter output stage, replacing Schottky diode.

Use Value: 25 nC Q_g allows efficient 1 MHz PWM dimming with minimal gate drive power loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 42 mΩ @ -4.5 V, but higher Q_g (33 nC); TSSOP-8 package	Slightly lower on-resistance at logic-level drive, but requires stronger gate driver	Prefer when gate drive voltage is limited to -4.5 V and thermal budget permits higher switching loss
DMG2305UVT-7	R_DS(on) = 52 mΩ @ -4.5 V; smaller SOT-23-6 package (lower current rating: -2.8 A)	Smaller footprint but lower current capability and higher conduction loss	Choose only for space-constrained, low-current (<2 A) applications where board area is more critical than efficiency

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7704TRPBF delivers optimal balance of low R_DS(on) at both -10 V and -4.5 V, proven thermal performance in TSSOP-8, and fast body diode recovery-making it preferred for mid-power portable power switches where efficiency, size, and reliability are jointly constrained.

Availability

IRF7704TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, PCMCIA card power control, and portable display backlight dimming requiring stable component supply and long-term lifecycle support.

Supply support for IRF7704TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF7704TRPBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in portable and battery-powered systems.

FAQ

What is the maximum safe operating temperature for IRF7704TRPBF?

The junction temperature must not exceed +150°C, and storage temperature range is -55°C to +150°C. With 83°C/W R_θJA on 1 in² copper, continuous 4.6 A operation requires ambient below +55°C or forced cooling. Derating begins at 12 mW/°C above 25°C ambient.

Can IRF7704TRPBF be used as a high-side switch without a charge pump?

No - as a P-channel MOSFET, it can operate as a high-side switch only when gate voltage is driven below source (e.g., source at +5 V, gate at 0 V). For full enhancement with source at system rail, a gate driver capable of negative swing or a charge pump is required to achieve V_GS ≤ -4.5 V.

Does IRF7704TRPBF have avalanche rating?

No avalanche rating is specified in the official datasheet. The device is not characterized for repetitive unclamped inductive switching (UIS) events. External clamping or snubbing is required in inductive load applications to prevent failure beyond V_DS = -40 V.

Is the body diode suitable for reverse polarity protection?

Yes - the integrated body diode conducts from source to drain (anode at drain, cathode at source), enabling reverse-polarity protection when placed between input and load. At -1.5 A, V_SD = -1.2 V, so power dissipation must be evaluated for worst-case fault duration and ambient conditions.

IRF7704TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 46mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3150 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

IRF7704TRPBF FAQ

1.How can I place an order for IRF7704TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7704TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7704TRPBF reliable?

The price and inventory of IRF7704TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7704TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7704TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7704TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7704TRPBF?

IRF7704TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7704TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7704TRPBF?

For technical support, including IRF7704TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7704TRPBF requirements.

6.How does Aetrix verify that IRF7704TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7704TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7704TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7704TRPBF?

All IRF7704TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7704TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7704TRPBF part is unused and in its original packaging.

Return procedure for IRF7704TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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