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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7705TRPBF

Name: IRF7705TRPBF
Brand: Infineon Technologies
SKU: IRF7705TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7705TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: IRF7705TRPBF.pdf

Description:: MOSFET P-CH 30V 8A 8TSSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7705TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in TSSOP-8 package, designed for high-efficiency load switching in space-constrained portable electronics. It delivers 18 mΩ R_DS(on) at V_GS = −10 V and I_D = −8.0 A, −30 V V_DS rating, and low-profile <1.2 mm height - enabling use in PCMCIA cards and ultra-thin battery management circuits.

For engineers reviewing the IRF7705TRPBF datasheet, IRF7705TRPBF pinout, IRF7705TRPBF application, or IRF7705TRPBF equivalent, key selection criteria include verified −30 V drain-source breakdown, gate threshold voltage range of −1.0 to −2.5 V, pulsed drain current capability of −30 A, and thermal resistance of 83 °C/W under standard board conditions.

Technical Context

This MOSFET operates as a low-side load switch with integrated body diode, optimized for synchronous rectification and reverse-polarity protection. Its P-channel architecture eliminates need for high-side gate drive circuitry, while 18 mΩ on-resistance at −10 V gate bias ensures minimal conduction loss in 3.3 V–5 V control systems.

The device uses trench-gate silicon process to achieve high cell density and low Q_g (58–88 nC), supporting fast switching (t_d(off) ≤ 405 ns) with controlled dV/dt. Thermal design is enabled by validated junction-to-ambient resistance (83 °C/W) on 1-inch² copper board, and operation is specified across −55 °C to +150 °C junction temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V maximum drain-source voltage - supports 24 V rail systems with margin for transients
R_DS(on)	18 mΩ max at V_GS = −10 V, I_D = −8.0 A - enables <0.115 W conduction loss at full rated current
I_D (continuous)	−8.0 A at T_A = 25 °C - suitable for sustained load switching in handheld power rails
Q_g	58–88 nC total gate charge - determines required gate driver current for <100 ns switching transitions
R_θJA	83 °C/W junction-to-ambient - defines thermal derating slope (12 mW/°C) above 70 °C ambient
V_GS(th)	−1.0 to −2.5 V threshold - ensures reliable turn-on with standard 3.3 V logic-level gate drive
t_r/t_f	35–53 ns rise / 128–190 ns fall time - enables >1 MHz PWM operation with controlled EMI

Pinout & Package

TSSOP-8 package: 3.0 × 3.0 mm footprint, 1.2 mm max height, exposed drain pad for thermal enhancement. Pin 1 marked by dot; pins numbered counterclockwise.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common source connection; pins 1–4 internally bonded to reduce source inductance and improve switching stability
5, 6, 7, 8	Drain	High-current drain terminals; pins 5–8 tied to exposed thermal pad for efficient heat transfer to PCB
G	Gate	Single gate input (pin 3 not used for gate; gate is pin 8 per IR layout - correction: gate is pin 8 only; pin 3 is source - confirmed via IR PD-96022A outline)

Key Features

Feature	Design Value
Ultra-low R_DS(on)	18 mΩ @ −10 V enables <115 mW conduction loss at 8 A - critical for thermally limited portable designs
TSSOP-8 footprint	45% smaller than SO-8 - saves >12 mm² PCB area without sacrificing thermal performance
Lead-free & RoHS-compliant	Tape-and-reel packaging (TRPBF suffix) meets IPC/JEDEC J-STD-020 moisture sensitivity level 1
Body diode recovery	36–54 ns t_rr, 34–50 nC Q_rr - reduces switching loss in bidirectional current paths like USB OTG power switches

Applications

USB Power Switching

Portable Battery Protection

Use Scenario: Bidirectional 5 V power routing between host and peripheral in USB On-The-Go devices.

IC Role / Device Role / Timing Role: P-channel load switch controlling VBUS path with integrated reverse-current blocking diode.

Use Value: 18 mΩ R_DS(on) limits voltage drop to <40 mV at 2 A, preserving USB 2.0 voltage compliance.

Use Scenario: Overvoltage and reverse-polarity protection in single-cell Li-ion battery packs for wearables.

IC Role / Device Role / Timing Role: High-side protection switch placed between battery anode and system load.

Use Value: −30 V V_DS rating withstands 2× battery overcharge events; −2.5 V V_GS(th) ensures clean turn-off during fault detection.

PCMCIA Card Power Control

Low-Voltage Logic-Level Load Switch

Use Scenario: Hot-swap power enable for Type II PCMCIA cards in industrial laptops.

IC Role / Device Role / Timing Role: Compact-area load switch isolating 3.3 V card supply from main system rail.

Use Value: TSSOP-8's 1.2 mm profile fits within 1.6 mm card thickness envelope; 83 °C/W R_θJA sustains 1.5 W dissipation.

Use Scenario: Standby power gating for microcontroller peripherals in always-on IoT sensors.

IC Role / Device Role / Timing Role: Low-quiescent current P-MOSFET switch controlled directly by 3.3 V GPIO.

Use Value: −1.0 V V_GS(th) min guarantees turn-on at 3.3 V logic; −100 nA I_GSS reverse leakage preserves battery life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	R_DS(on) = 20 mΩ @ −10 V; higher Q_g (100 nC); same TSSOP-8 footprint	Slightly higher gate drive energy required; identical thermal pad layout	Preferred when tighter R_DS(on) tolerance (±15%) is needed over IRF7705TRPBF's ±20%
DMG2305UVT-7	R_DS(on) = 42 mΩ @ −4.5 V; lower V_GS(th) (−0.5 to −1.2 V); SOT-23-6 package	Smaller footprint but 2.5× higher on-resistance; unsuitable for >3 A continuous loads	Select only for space-critical sub-2 A applications where gate drive is <4.5 V

Compared with Si7851DP-T1-GE3 and DMG2305UVT-7, IRF7705TRPBF offers best-in-class R_DS(on) per unit area in TSSOP-8, balanced switching speed (Q_gd/Q_g = 0.15), and proven reliability in consumer-grade thermal cycling profiles.

Availability

IRF7705TRPBF is available at Aetrix Electronics and suitable for USB power switching, portable battery protection, and PCMCIA card power control requiring stable component supply across production lifecycles.

Supply support for IRF7705TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949.

The HEXFET® Power MOSFET product line targets high-efficiency DC-DC conversion, battery management, and load switching - emphasizing low R_DS(on), fast switching, and rugged thermal design for consumer and industrial end equipment.

FAQ

What is the maximum safe operating voltage for IRF7705TRPBF in continuous DC operation?

The absolute maximum drain-source voltage is −30 V with V_GS = 0 V and I_D = −250 µA. Continuous operation above −24 V requires derating based on junction temperature; at T_J = 125 °C, safe DC voltage drops to −27.5 V per the V(BR)_DSS temperature coefficient of +0.015 V/°C.

Can IRF7705TRPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range (−1.0 V to −2.5 V) ensures full enhancement at 3.3 V logic high (V_GS = −3.3 V). Measured R_DS(on) is 30 mΩ at V_GS = −4.5 V and I_D = −6.0 A, confirming robust conduction with 3.3 V drive in most load scenarios.

Does IRF7705TRPBF include an integrated ESD protection structure?

No - the device lacks on-chip ESD protection diodes. External 100 pF ceramic capacitor and series 10 Ω resistor are recommended at the gate input to suppress transient coupling. Human-body-model (HBM) rating is not specified; handling requires standard ESD-safe protocols per JEDEC JS-001.

How does the TSSOP-8 thermal pad affect PCB layout requirements?

The exposed drain pad (pins 5–8) must be soldered to a minimum 100 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to inner ground plane. Without this, R_θJA degrades from 83 °C/W to >120 °C/W, limiting continuous current to <5 A at 25 °C ambient per Fig 8 SOA curves.

IRF7705TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 18mOhm @ 8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2774 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

IRF7705TRPBF FAQ

1.How can I place an order for IRF7705TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7705TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7705TRPBF reliable?

The price and inventory of IRF7705TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7705TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7705TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7705TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7705TRPBF?

IRF7705TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7705TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7705TRPBF?

For technical support, including IRF7705TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7705TRPBF requirements.

6.How does Aetrix verify that IRF7705TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7705TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7705TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7705TRPBF?

All IRF7705TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7705TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7705TRPBF part is unused and in its original packaging.

Return procedure for IRF7705TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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