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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7707GTRPBF

Name: IRF7707GTRPBF
Brand: Infineon Technologies
SKU: IRF7707GTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7707GTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP (0.173", 4.40mm Width)

Datasheet:: IRF7707GTRPBF.pdf

Description:: MOSFET P-CH 20V 7A 8TSSOP

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Product details

Overview

IRF7707GTRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel TSSOP-8 packaged HEXFET® Power MOSFET designed for low-voltage load switching and battery protection circuits. It delivers 22 mΩ R_DS(on) at V_GS = −4.5 V and I_D = −7.0 A, supports −20 V drain-source breakdown voltage, and operates across −55 °C to +150 °C junction temperature - enabling compact, high-efficiency power management in portable electronics.

For engineers reviewing the IRF7707GTRPBF datasheet, IRF7707GTRPBF pinout, IRF7707GTRPBF application, or IRF7707GTRPBF equivalent, key selection criteria include verified R_DS(on) at −4.5 V gate drive, pulsed drain current capability of −28 A, thermal resistance of 83 °C/W (junction-to-ambient), and TSSOP-8 footprint compatibility with space-constrained PCB layouts.

Technical Context

This device implements a planar trench-gate P-channel MOSFET structure optimized for low gate charge (Q_g = 31–47 nC) and fast switching (t_d(off) = 134–201 ns, t_f = 138–207 ns). Its body diode exhibits V_SD = −1.2 V at I_S = −1.5 A and reverse recovery time t_rr = 142–213 ns, supporting synchronous rectification and bidirectional current handling in DC-DC converters.

The R_DS(on) shows strong gate voltage dependence: 33 mΩ at V_GS = −2.5 V / I_D = −6.0 A and 22 mΩ at V_GS = −4.5 V / I_D = −7.0 A. Temperature coefficient of breakdown voltage is +0.012 V/°C, and gate threshold voltage V_GS(th) ranges from −0.45 V to −1.2 V, ensuring stable turn-on behavior under varying thermal conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−20 V: Maximum blocking voltage for low-voltage battery-side switching (e.g., 12 V automotive or 5 V USB PD systems).
R_DS(on)	22 mΩ @ V_GS = −4.5 V, I_D = −7.0 A: Enables ≤0.11 W conduction loss at full rated current, critical for thermal budget in thin-profile devices.
I_D (continuous)	−7.0 A @ T_A = 25 °C: Sustains high-side or low-side load current in always-on power rails without forced cooling.
Q_g	31–47 nC: Low total gate charge reduces driver power demand and enables efficient PWM operation up to ~500 kHz.
R_θJA	83 °C/W: Junction-to-ambient thermal resistance measured on 1-inch² copper board - defines maximum power dissipation before thermal shutdown.
t_rr	142–213 ns: Body diode reverse recovery time limits switching losses during hard-commutation in buck or inverting topologies.

Pinout & Package

TSSOP-8 package: 3.0 mm × 3.0 mm footprint, <1.2 mm profile, lead-free and halogen-free construction. Optimized for automated assembly and high-density PCB routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source terminals reduce bond wire inductance and improve current sharing - essential for pulsed operation up to −28 A.
5, 6, 7, 8	Drain (D)	Four parallel drain terminals provide low-inductance path to ground plane - minimizes voltage spikes during fast turn-off.
Gate (G)	Control input	Single gate terminal (Pin 8 per standard TSSOP-8 pinout) accepts −4.5 V logic-level drive for direct microcontroller interface.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	22 mΩ at −4.5 V ensures <0.11 W conduction loss at −7 A - extends battery life in portable systems.
TSSOP-8 footprint	45% smaller than SO-8 - saves PCB area in space-limited applications like PCMCIA cards and ultrathin laptops.
Low-profile height	<1.2 mm max - enables integration into stacked modules and slim consumer enclosures without mechanical interference.
Body diode performance	V_SD = −1.2 V @ −1.5 A and t_rr = 142–213 ns - supports efficient freewheeling in synchronous buck converters.

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side switch controlling battery discharge path with integrated body diode for charging path isolation.

Use Value: 22 mΩ R_DS(on) limits voltage drop to <155 mV at 7 A, preserving battery runtime and reducing thermal stress on protection ICs.

Use Scenario: Hot-swap and fault-isolation switching in USB-C power delivery ports.

IC Role / Device Role / Timing Role: Load switch managing VBUS connection with fast turn-off (t_f = 138–207 ns) to prevent bus collapse during short-circuit events.

Use Value: −20 V V_DS rating exceeds USB PD 20 V specification; low Q_g enables clean switching with minimal EMI in high-speed data/power co-location.

DC-DC Converter High-Side Switch

Industrial Sensor Power Rail

Use Scenario: High-side synchronous rectifier in non-isolated buck converters powering FPGAs or DSPs.

IC Role / Device Role / Timing Role: P-channel MOSFET operating as controlled high-side switch with body diode conducting during low-side conduction phase.

Use Value: Verified t_rr = 142–213 ns and Q_rr = 147–221 nC minimize dead-time losses and reduce output ripple in 300–500 kHz designs.

Use Scenario: Always-on 3.3 V or 5 V power rail for industrial I/O sensors requiring robust overvoltage and ESD tolerance.

IC Role / Device Role / Timing Role: Low-R_DS(on) load switch providing fault-isolated supply with −20 V V_DS margin against transients.

Use Value: −55 °C to +150 °C operating range supports deployment in unheated outdoor enclosures; 83 °C/W R_θJA allows passive cooling in sealed housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 25 mΩ @ −4.5 V, I_D = −6.5 A; slightly higher on-resistance and lower current rating.	Same TSSOP-8 footprint but lower thermal derating above 70 °C - less suitable for sustained 7 A loads.	Select when tighter gate threshold control (−0.5 V to −1.0 V) is required for precise turn-on timing.
DMG2305UVT-7	R_DS(on) = 42 mΩ @ −4.5 V, I_D = −4.2 A; higher conduction loss and lower current capacity.	Smaller 2 mm × 2 mm DFN package - better for ultra-dense layouts but requires stricter thermal management.	Choose only if PCB area is more constrained than thermal budget, and peak current remains below 4.2 A.

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, the IRF7707GTRPBF offers the lowest R_DS(on) and highest continuous current in TSSOP-8, making it optimal for thermally demanding, high-current load-switching where board space is limited but not extreme.

Availability

IRF7707GTRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, DC-DC converter high-side switches, and industrial sensor power rails requiring stable component supply and long-term lifecycle support.

Supply support for IRF7707GTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors. The company specializes in silicon and wide-bandgap solutions for energy-efficient power conversion.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for low-voltage, high-current load switching in space-constrained portable and industrial electronics - emphasizing ultra-low on-resistance, fast switching, and rugged thermal performance.

FAQ

What is the maximum gate-to-source voltage rating for IRF7707GTRPBF?

The absolute maximum V_GS is ±12 V. Exceeding this rating risks permanent gate oxide damage. For reliable operation, gate drive should be clamped between −12 V and +12 V using Zener diodes or dedicated gate drivers - especially important during hot-plug or transient events in USB PD applications.

Does IRF7707GTRPBF require a gate resistor for stability?

Yes - a series gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate-drain capacitance (C_rss = 323 pF) and PCB trace inductance. Without it, overshoot and oscillation during switching can exceed V_GS limits or cause false turn-on due to Miller effect coupling.

Can IRF7707GTRPBF be used in linear (analog) regulation mode?

No - it is not characterized or qualified for linear-mode operation. Its Safe Operating Area (SOA) curve shows pulse-limited operation only; continuous linear use risks thermal runaway due to positive R_DS(on) temperature coefficient and insufficient SOA margin at low V_DS/high I_D.

Is the body diode in IRF7707GTRPBF suitable for reverse polarity protection?

Yes - the integral body diode provides inherent reverse-polarity protection when the MOSFET is placed in the high-side configuration with source tied to input. However, V_SD = −1.2 V at −1.5 A means ~1.8 W dissipation at that current, so it's only appropriate for brief fault conditions or low-current backup paths.

IRF7707GTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP (0.173", 4.40mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 7A, 4.5V

Vgs(th) (Max) @ Id:: 1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2361 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-TSSOP

IRF7707GTRPBF FAQ

1.How can I place an order for IRF7707GTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7707GTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7707GTRPBF reliable?

The price and inventory of IRF7707GTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7707GTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7707GTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7707GTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7707GTRPBF?

IRF7707GTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7707GTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7707GTRPBF?

For technical support, including IRF7707GTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7707GTRPBF requirements.

6.How does Aetrix verify that IRF7707GTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7707GTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7707GTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7707GTRPBF?

All IRF7707GTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7707GTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7707GTRPBF part is unused and in its original packaging.

Return procedure for IRF7707GTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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