Infineon Technologies IRF7707TRPBF

Overview

IRF7707TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel TSSOP-8 packaged HEXFET® Power MOSFET designed for low-voltage load switching and battery protection circuits. It delivers 22 mΩ R_DS(on) at V_GS = −4.5 V and I_D = −7.0 A, supports −20 V V_DS, operates across −55 °C to +150 °C, and features ultra-low profile (<1.2 mm) packaging ideal for space-constrained portable electronics.

For engineers reviewing the IRF7707TRPBF datasheet, IRF7707TRPBF pinout, IRF7707TRPBF application, or IRF7707TRPBF equivalent, key selection criteria include verified R_DS(on) at −4.5 V gate drive, TSSOP-8 thermal resistance (83 °C/W), body diode forward voltage (−1.2 V @ −1.5 A), and pulsed drain current capability (−28 A).

Technical Context

This device implements a planar trench-gate P-channel MOSFET structure optimized for high efficiency in synchronous rectification and reverse polarity protection. Its gate threshold voltage (−0.45 V to −1.2 V) enables reliable turn-on with low-voltage logic-level control, while its 31 nC total gate charge and 10 nC Miller charge support moderate-speed switching in DC/DC converters and power OR-ing circuits.

The integrated body diode exhibits 142–213 ns reverse recovery time and 147–221 nC reverse recovery charge under defined conditions, enabling predictable performance in freewheeling paths. Thermal design is constrained by 83 °C/W junction-to-ambient resistance on standard PCB mounting, requiring careful layout for sustained 1.5 W dissipation at 25 °C ambient.

Key Specifications

Pinout & Package

TSSOP-8 package: 3.0 × 3.0 mm footprint, 1.1 mm max height, lead-free, tape-and-reel compatible. Exposed drain pad on bottom for thermal enhancement (not electrically isolated).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with Si7157DP-T1-GE3 and DMG2307L-7, IRF7707TRPBF offers the lowest R_DS(on) in TSSOP-8, enabling highest efficiency in compact battery-powered systems where both size and thermal performance are critical.

Availability

IRF7707TRPBF is available at Aetrix Electronics and suitable for battery management systems, USB power delivery modules, redundant power OR-ing circuits, and portable DC/DC converter designs requiring stable component supply and long-term manufacturability.

Supply support for IRF7707TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices and system-level integration.

The IRF7707TRPBF belongs to Infineon's legacy HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, space-constrained load switching in consumer and portable electronics.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7707TRPBF supports −5.7 A continuous drain current at T_A = 70 °C with V_GS = −4.5 V, based on its 1.0 W maximum power dissipation rating and 83 °C/W thermal resistance. This assumes standard mounting on 1 inch² copper PCB; derating is required for smaller copper areas or forced-air cooling absence.

Does this MOSFET require a gate driver for microcontroller interfacing?

No external gate driver is required for basic on/off control with 3.3 V or 2.5 V GPIO, as its gate threshold voltage ranges from −0.45 V to −1.2 V and it turns fully on at −4.5 V. However, a dedicated driver improves switching speed and reduces gate ringing in high-frequency or high-current applications.

Is the exposed drain pad electrically connected to the drain terminals?

Yes - the exposed pad on the underside of the TSSOP-8 package is internally connected to pins 5–8 (drain) and must be soldered to a PCB copper pour for optimal thermal performance and current handling. It is not isolated and must be treated as part of the drain node in layout.

Can IRF7707TRPBF be used in linear regulation mode?

It is not recommended for sustained linear operation due to limited safe operating area (SOA) at high V_DS/I_D combinations. The device is optimized for switching applications; linear use risks thermal runaway above ~1 W dissipation without active heatsinking and precise bias control.