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Infineon Technologies IRF7726
- Part No.:
- IRF7726
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7726.pdf
- Description:
- MOSFET P-CH 30V 7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:7,912
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Product details
Overview
IRF7726 from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in Micro8 package, rated for -30 V VDS, 0.026 Ω RDS(on) at VGS = -10 V and ID = -7.0 A, with 1.79 W power dissipation at TA = 25°C. It serves as a low-side load switch in portable battery-powered systems requiring compact, low-profile power control.
For engineers reviewing the IRF7726 datasheet, IRF7726 pinout, IRF7726 application, or IRF7726 equivalent, key selection criteria include verified -30 V breakdown voltage, gate threshold range (-1.0 to -2.5 V), body diode forward voltage (-1.2 V at -1.8 A), thermal resistance (70 °C/W), and Micro8 footprint compatibility with space-constrained PCB layouts.
Technical Context
This device operates as a normally-off P-channel switch controlled by negative gate-to-source voltage. Its ultra-low on-resistance enables high-efficiency load switching at currents up to -7.0 A DC (TA = 25°C), with linear derating to -5.7 A at 70°C ambient.
The integrated body diode supports reverse current conduction with 35–53 ns reverse recovery time and 32–48 µC reverse recovery charge under specified di/dt conditions. Gate drive requires only -10 V for full enhancement, with total gate charge of 46–69 nC and Miller charge of 8.1 nC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage before avalanche onset |
| RDS(on) | 0.026 Ω @ VGS = -10 V, ID = -7.0 A - Enables <175 mW conduction loss at 7 A |
| ID (continuous) | -7.0 A @ TA = 25°C - Sustained load current capability with standard PCB copper area |
| Qg | 46–69 nC - Determines gate driver strength requirement for 100 kHz+ switching |
| RθJA | 70 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper board |
| VSD | -1.2 V @ IS = -1.8 A, TJ = 25°C - Forward voltage drop of integrated source-drain body diode |
| VGS(th) | -1.0 to -2.5 V - Gate threshold range defining reliable turn-on margin with logic-level drivers |
Pinout & Package
IRF7726 is housed in a surface-mount Micro8 package (SOIC-8 variant with half footprint and <1.2 mm profile). The package features exposed drain pads for thermal performance and is lead-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 7, 8 | Drain (D) | Common high-current output node; electrically tied to exposed pad for thermal conduction |
| 6 | Gate (G) | Control input; requires negative voltage relative to source to turn on |
| Source (S) | Source (S) | Reference terminal for gate drive and load return path; pins 1–5 and 7–8 are internally connected to drain, not source |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.026 Ω at -10 V gate drive - Reduces conduction losses in battery discharge paths |
| Micro8 footprint | 50% smaller than SO-8 - Saves PCB area in portable electronics and PCMCIA modules |
| Low-profile height | <1.2 mm - Enables integration into ultra-thin enclosures and stacked board assemblies |
| Lead-free construction | Pb-free plating and RoHS-compliant materials - Meets global environmental compliance requirements |
| Robust body diode | 35 ns trr, -1.2 V VSD - Supports synchronous rectification and inductive load freewheeling |
Applications
| Smartphone Battery Protection | USB OTG Power Switch |
|---|---|
Use Scenario: Isolating main Li-ion battery from USB VBUS during host mode to prevent backfeed and overvoltage damage. IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as reverse-polarity and backfeed protection switch. Use Value: 0.026 Ω RDS(on) limits voltage drop to <182 mV at 7 A, preserving system efficiency and thermal headroom. | Use Scenario: Enabling/disabling 5 V power delivery from embedded host to peripheral devices via USB On-The-Go. IC Role / Device Role / Timing Role: Load switch controlling VBUS path with fast turn-on/off timing (td(on) ≤ 23 ns). Use Value: 46–69 nC total gate charge allows clean switching with standard GPIO-driven gate drivers without external buffers. |
| PCMCIA Card Power Control | Industrial Sensor Node Power Gating |
Use Scenario: Sequencing power to hot-pluggable PCMCIA cards while meeting mechanical height constraints (<1.2 mm). IC Role / Device Role / Timing Role: Compact-footprint P-channel switch enabling space-constrained card-edge power management. Use Value: Micro8 package fits within tight card thickness envelopes while delivering -7.0 A continuous current at ambient temperature. | Use Scenario: Duty-cycled power gating of wireless sensor transceivers to extend battery life in remote monitoring nodes. IC Role / Device Role / Timing Role: High-reliability load switch activated by microcontroller GPIO with defined VGS(th) margin. Use Value: -1.0 to -2.5 V gate threshold ensures robust turn-on with 3.3 V logic levels using simple level-shifting resistors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP | RDS(on) = 0.022 Ω @ -10 V, but rated for -20 V VDS only | Lower voltage rating restricts use in -24 V industrial rails where IRF7726's -30 V rating provides margin | Select when operating strictly at ≤-12 V and prioritizing lowest on-resistance |
| DMN3028LSD | SO-8 package (larger footprint), RDS(on) = 0.028 Ω @ -10 V, higher RθJA (80 °C/W) | Larger size and worse thermal resistance limit current handling in thin-profile designs | Choose only if Micro8 footprint is unavailable and PCB space permits SO-8 layout |
Compared with Si7157DP and DMN3028LSD, IRF7726 uniquely balances -30 V rating, 0.026 Ω on-resistance, Micro8 footprint, and 70 °C/W thermal resistance-making it optimal for space- and voltage-constrained battery management where both reliability and miniaturization are critical.
Availability
IRF7726 is available at Aetrix Electronics and suitable for smartphone battery protection, USB OTG power switching, and PCMCIA card power control requiring stable component supply across production lifecycles.
Supply support for IRF7726 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.
The IRF7726 belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, low-voltage load switching in portable and space-constrained electronics.
FAQ
What is the maximum continuous drain current for IRF7726 at 70°C ambient?
The maximum continuous drain current is -5.7 A at TA = 70°C with VGS = -10 V, based on thermal derating from its 1.14 W power dissipation limit and 70 °C/W junction-to-ambient thermal resistance. This value assumes mounting on 1 inch² copper board with t < 10 sec pulse duration.
Can IRF7726 be driven directly by a 3.3 V microcontroller GPIO?
No-IRF7726 requires a negative gate-to-source voltage for turn-on, with VGS(th) ranging from -1.0 V to -2.5 V. A 3.3 V GPIO alone cannot produce the required negative bias; a level-shifting circuit or dedicated gate driver generating -4.5 V to -10 V is necessary for full enhancement.
Does IRF7726 include an integrated body diode, and what are its key parameters?
Yes-it features an integral source-drain p-n junction body diode with forward voltage of -1.2 V at -1.8 A and 25°C, reverse recovery time of 35–53 ns, and reverse recovery charge of 32–48 µC under di/dt = -100 A/µs. These values enable reliable freewheeling in inductive load applications.
What is the recommended PCB layout practice for thermal management of IRF7726?
Use minimum 1 inch² copper area connected to the drain pads (pins 1, 2, 3, 4, 5, 7, 8 and exposed pad) with multiple thermal vias to inner/ground planes. Avoid isolating the drain pad-its direct connection to copper is essential to achieve the specified 70 °C/W RθJA and sustain -7.0 A continuous current at 25°C ambient.
IRF7726 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2204 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.79W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7726 FAQ
1.How can I place an order for IRF7726 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7726 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7726 reliable?
The price and inventory of IRF7726 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7726 is usually 5 days.
3.What payment methods are accepted for IRF7726?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7726 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7726?
IRF7726 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7726 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7726?
For technical support, including IRF7726 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7726 requirements.
6.How does Aetrix verify that IRF7726 is sourced from the original manufacturer or authorized distributors?
All IRF7726 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7726 meets industry standards.
7.What is the process for return or replacement of IRF7726?
All IRF7726 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7726, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7726 part is unused and in its original packaging.
Return procedure for IRF7726:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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