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Infineon Technologies IRF7726TR
- Part No.:
- IRF7726TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Datasheet:
-
IRF7726TR.pdf
- Description:
- MOSFET P-CH 30V 7A MICRO8
- Quantity:
- Payment:
- Shipping:
Inventory:8,944
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Product details
Overview
IRF7726TR from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in Micro8 package, rated for -30 V VDS, 7.0 A continuous drain current at 25°C, and 0.026 Ω RDS(on) at VGS = -10 V. It serves as a low-side load switch in portable battery-powered systems requiring ultra-low on-resistance and minimal PCB footprint.
For engineers reviewing the IRF7726TR datasheet, IRF7726TR pinout, IRF7726TR application, or IRF7726TR equivalent, key selection criteria include verified -30 V breakdown voltage, sub-1.2 mm profile compatibility with thin-profile designs, body diode reverse recovery charge (Qrr = 32–48 µC), and thermal resistance (RθJA = 70 °C/W) under standard board mounting.
Technical Context
This device operates as a normally-off P-channel switch controlled by negative gate drive relative to source. Its low RDS(on) enables high-efficiency power path control in battery protection, USB port power switching, and hot-swap circuits where bidirectional blocking and fast turn-off are required.
The integrated body diode supports synchronous rectification in buck converters and reverse-polarity protection. Gate charge parameters (Qg = 46–69 nC, Qgd = 8.1 nC) indicate moderate switching speed suitable for DC-DC converters operating below 1 MHz, with turn-off delay (td(off)) up to 341 ns at RG = 6.0 Ω.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage; defines safe operation in -24 V rail systems with margin. |
| RDS(on) | 0.026 Ω @ VGS = -10 V, ID = -7.0 A - Enables <180 mW conduction loss at full rated current. |
| ID (cont) | -7.0 A @ TA = 25°C - Continuous load current capability without heatsink on standard PCB. |
| Qg | 46–69 nC - Total gate charge determines driver strength requirement for 100–500 kHz switching. |
| RθJA | 70 °C/W - Junction-to-ambient thermal resistance on 1-inch² copper board; sets max power dissipation limit. |
| VGS(th) | -1.0 to -2.5 V - Gate threshold range confirms reliable turn-on with -4.5 V logic-level drive. |
| Qrr | 32–48 µC - Body diode reverse recovery charge impacts efficiency and EMI in hard-switched topologies. |
Pinout & Package
IRF7726TR uses the Micro8 surface-mount package (SOIC outline, 3.0 × 3.0 mm, height <1.2 mm), offering half the footprint of standard SO-8 while maintaining compatible pad layout for automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5 | Drain (D) | Common high-current output node; internally paralleled pins reduce resistance and improve thermal spreading. |
| 6 | Gate (G) | Control input; requires negative voltage relative to source to turn on; sensitive to ESD (±20 V rating). |
| 7, 8 | Source (S) | Reference node for gate drive and load return path; dual pins lower source inductance in high-dI/dt switching. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.026 Ω at -10 V drive enables <0.2 W conduction loss at 7 A, critical for thermally constrained portable devices. |
| Micro8 package | 3.0 × 3.0 mm footprint with <1.2 mm height fits PCMCIA cards, ultrathin tablets, and space-limited battery packs. |
| Lead-free construction | RoHS-compliant termination supports modern reflow profiles and eliminates lead-based solder compatibility concerns. |
| Robust body diode | Qrr = 32–48 µC and trr = 35–53 ns support reliable reverse recovery in synchronous buck and OR-ing applications. |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: P-channel MOSFET used as back-to-back switch with gate driven by protection IC to interrupt charging/discharging paths. Use Value: 0.026 Ω RDS(on) minimizes voltage drop across protection FET, preserving battery runtime and enabling accurate current sensing. | Use Scenario: Hot-swap enable/disable of 5 V USB power rails in docking stations and multi-port hubs. IC Role / Device Role / Timing Role: Low-side load switch controlling power delivery to downstream peripherals with controlled inrush limiting. Use Value: Fast turn-off (tf = 107–161 ns) and low Qg allow clean, glitch-free port enable timing synchronized to USB enumeration. |
| Portable Medical Device Power Path | Industrial Sensor Node Power Management |
Use Scenario: Dual-input power selection (battery + USB) with automatic switchover and reverse polarity protection. IC Role / Device Role / Timing Role: P-channel switch placed between input sources and system regulator; body diode provides passive OR-ing path. Use Value: -30 V VDS rating accommodates transient surges up to ±25 V, meeting IEC 61000-4-5 Level 3 surge immunity requirements. | Use Scenario: Remote wireless sensor nodes powered by coin-cell batteries requiring ultra-low quiescent current and long shelf life. IC Role / Device Role / Timing Role: Load switch isolating RF transceiver and MCU during deep sleep mode to eliminate leakage paths. Use Value: IDSS <1 µA at VDS = -30 V ensures <100 nA system standby current, extending battery life beyond 10 years. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.022 Ω @ -10 V but higher Qg (80 nC); Micro8-compatible but slightly taller (1.3 mm). | Better conduction loss but slower switching; less suitable for >300 kHz PWM control. | Prefer when minimizing I²R loss dominates over switching frequency constraints. |
| DMN3026LFG-7 | RDS(on) = 0.032 Ω @ -10 V; smaller 2×2 mm DFN package; no exposed drain pad. | Smaller footprint but higher thermal resistance (RθJA = 120 °C/W); limited to <4 A continuous. | Prefer when board area is more constrained than thermal budget or current rating. |
Compared with Si7157DP-T1-GE3 and DMN3026LFG-7, IRF7726TR delivers optimal balance of low RDS(on), proven Micro8 manufacturability, and moderate gate drive demand-making it ideal for cost-sensitive, medium-frequency battery management designs where thermal headroom exists.
Availability
IRF7726TR is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, portable medical devices, and industrial sensor nodes requiring stable component supply and long-term production continuity.
Supply support for IRF7726TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with legacy expertise from International Rectifier's HEXFET® technology.
The IRF7726TR belongs to the HEXFET® Micro8 Power MOSFET product line, engineered specifically for space-constrained, battery-operated applications demanding high efficiency, low profile, and robust thermal performance.
FAQ
What is the maximum junction temperature for reliable operation of IRF7726TR?
The IRF7726TR has a specified junction temperature range of -55°C to +150°C. Operation above +150°C risks permanent degradation of the silicon die and packaging integrity. Derating is required above 25°C ambient per its linear derating factor of 0.01 W/°C, and thermal design must ensure TJ remains within limits under worst-case power dissipation and PCB copper area.
Can IRF7726TR be driven directly from a 3.3 V microcontroller GPIO?
No-IRF7726TR requires a negative gate-to-source voltage for turn-on, with VGS(th) ranging from -1.0 V to -2.5 V. A 3.3 V GPIO cannot produce the necessary negative bias. A dedicated gate driver or level-shifting circuit (e.g., charge pump or complementary N/P-stage) is required to generate -4.5 V or -10 V gate drive referenced to the source node.
Does IRF7726TR include built-in ESD protection?
The IRF7726TR has a gate-to-source voltage rating of ±20 V, indicating basic oxide robustness, but it does not integrate dedicated on-chip ESD protection structures like Zener clamps. External TVS diodes or series gate resistors are recommended in handling and PCB layout to prevent damage from human-body-model (HBM) discharges exceeding ±2 kV.
How does the Micro8 package affect thermal performance compared to standard SO-8?
The Micro8 package reduces footprint by 50% but increases RθJA to 70 °C/W (vs. ~62 °C/W for SO-8 on identical board), due to smaller copper area and thinner mold compound. Thermal performance relies heavily on proper PCB copper pour under the exposed drain pads; using ≥2 oz copper and thermal vias improves RθJA by up to 15 °C/W in production layouts.
IRF7726TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2204 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.79W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Micro8™
IRF7726TR FAQ
1.How can I place an order for IRF7726TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7726TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7726TR reliable?
The price and inventory of IRF7726TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7726TR is usually 5 days.
3.What payment methods are accepted for IRF7726TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7726TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7726TR?
IRF7726TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7726TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7726TR?
For technical support, including IRF7726TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7726TR requirements.
6.How does Aetrix verify that IRF7726TR is sourced from the original manufacturer or authorized distributors?
All IRF7726TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7726TR meets industry standards.
7.What is the process for return or replacement of IRF7726TR?
All IRF7726TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7726TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7726TR part is unused and in its original packaging.
Return procedure for IRF7726TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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