Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7726TRPBF

Name: IRF7726TRPBF
Brand: Infineon Technologies
SKU: IRF7726TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7726TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Datasheet:: IRF7726TRPBF.pdf

Description:: MOSFET P-CH 30V 7A MICRO8

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,128

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7726TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in Micro8 package, rated for -30 V V_DS, 7.0 A continuous drain current at -10 V V_GS, and 0.026 Ω R_DS(on) at -10 V. It serves as a low-side load switch or battery disconnect device in portable power management circuits.

For engineers reviewing the IRF7726TRPBF datasheet, IRF7726TRPBF pinout, IRF7726TRPBF application, or IRF7726TRPBF equivalent, key selection criteria include verified -30 V breakdown voltage, sub-26 mΩ on-resistance at -10 V gate drive, thermal resistance of 70 °C/W (junction-to-ambient), Micro8 footprint compatibility, and body diode reverse recovery charge of 32–48 µC.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage range of -1.0 V to -2.5 V, enabling logic-level compatibility with 3.3 V and 5 V controllers when used in high-side or low-side switching configurations. Its low-profile Micro8 package (height < 1.2 mm) supports space-constrained PCB layouts in battery-powered systems.

The integrated body diode exhibits 35–53 ns reverse recovery time and -1.2 V forward voltage at -1.8 A, supporting synchronous rectification and bidirectional current handling in DC-DC converters and USB power delivery paths. Device safe operating area (SOA) is defined up to 100 µs single-pulse at -30 V and -7 A.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum blocking voltage for battery reverse polarity protection and load switching in 12 V/24 V systems
R_DS(on)	0.026 Ω @ V_GS = -10 V, I_D = -7.0 A - Enables < 200 mW conduction loss at full rated current
I_D (continuous)	-7.0 A @ T_A = 25°C - Supports sustained load currents typical in PCMCIA card power rails and portable device battery switches
Q_g	46–69 nC - Determines gate driver strength requirement for < 350 ns turn-on delay and < 161 ns fall time
R_θJA	70 °C/W - Requires minimal copper pour for thermal management on standard FR-4 boards
V_SD	-1.2 V @ I_S = -1.8 A - Defines forward drop during reverse current flow in battery backup or hot-swap applications

Pinout & Package

Package: Micro8 (SOIC-8 variant, 3.0 mm × 3.0 mm, height < 1.2 mm, lead-free).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Common high-current output node; internally paralleled for low R_DS(on) and thermal spreading
6	Gate (G)	Control input; requires -10 V for full enhancement; gate leakage ≤ ±100 nA at ±20 V
7, 8	Source (S)	Power return path; tied to system ground or battery negative in low-side switch configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.026 Ω at -10 V gate drive - reduces I²R losses by >40% vs. comparable SO-8 P-MOSFETs
Micro8 footprint	50% smaller area than standard SO-8 - enables dense layout in handheld and wearable electronics
Low-profile height	<1.2 mm - fits within mechanical envelopes of PCMCIA cards and ultra-thin tablets
Body diode performance	Q_rr = 32–48 µC, t_rr = 35–53 ns - supports efficient flyback energy recovery in buck regulators

Applications

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse polarity and overcurrent protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active disconnect switch controlled by protection IC.

Use Value: 0.026 Ω R_DS(on) limits voltage drop to < 180 mV at 7 A, preserving battery runtime and reducing thermal stress.

Use Scenario: VBUS path control in USB-C receptacles supporting 3 A/5 V and 1.5 A/20 V profiles.

IC Role / Device Role / Timing Role: Load switch managing power routing between source and sink with fast turn-off (< 341 ns td(off)).

Use Value: Micro8 footprint allows dual-switch placement in 8 mm × 8 mm USB-C connector keep-out zone.

PCMCIA Card Power Management

Industrial Sensor Node Power Gating

Use Scenario: Hot-swap power enable/disable for Type II PCMCIA cards in embedded controllers.

IC Role / Device Role / Timing Role: High-side P-MOSFET switch with body diode conducting reverse current during insertion.

Use Value: -1.2 V V_SD ensures < 200 mV forward drop during hot-plug inrush, limiting bus disturbance.

Use Scenario: Periodic power gating of wireless sensor transceivers to extend battery life.

IC Role / Device Role / Timing Role: Low-quiescent-load switch isolating RF module supply during sleep mode.

Use Value: Gate leakage ≤ ±100 nA prevents standby current degradation in multi-year deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.022 Ω @ -4.5 V, but V_DS = -20 V only	Not suitable for 24 V industrial inputs or automotive battery backup	Select only for 3.3 V/5 V logic-driven 12 V systems with strict gate-drive margin
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V, SOT-23-6 package, higher R_θJA = 150 °C/W	Limited to < 2 A continuous due to thermal constraints in compact layouts	Prefer where board space is extremely limited and current demand is ≤ 2 A

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7726TRPBF uniquely balances -30 V rating, 7 A capability, and Micro8 footprint-making it optimal for 12–24 V portable equipment requiring both robustness and miniaturization.

Availability

IRF7726TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, PCMCIA card power management, and industrial sensor node power gating requiring stable component supply and long-term lifecycle support.

Supply support for IRF7726TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with legacy expertise from International Rectifier's HEXFET® portfolio.

The IRF7726TRPBF belongs to the HEXFET® Micro8 Power MOSFET product line, engineered for ultra-compact, high-efficiency load switching in space- and thermally constrained portable electronics.

FAQ

What is the maximum junction temperature for reliable operation?

The IRF7726TRPBF has a specified junction and storage temperature range of -55°C to +150°C. Continuous operation above +150°C risks permanent parametric shift and bond-wire failure. Derating begins at +70°C ambient per the linear derating factor of 0.01 W/°C beyond 25°C case temperature.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage range (-1.0 V to -2.5 V) requires sufficient negative gate drive to achieve low R_DS(on). At 3.3 V logic, V_GS ≈ -3.3 V yields R_DS(on) ≈ 0.040 Ω (per datasheet), increasing conduction loss by ~54% versus -10 V drive. A dedicated gate driver or level shifter is required for full performance.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has characterized Q_rr (32–48 µC) and t_rr (35–53 ns), enabling use in synchronous buck topologies up to ~500 kHz. However, its V_SD of -1.2 V at -1.8 A results in higher forward loss than discrete Schottky diodes, so efficiency gains depend on switching frequency and load current profile.

Does the Micro8 package support reflow soldering per JEDEC J-STD-020?

Yes-IRF7726TRPBF is qualified for lead-free reflow per JEDEC J-STD-020D, with peak reflow temperature of 260°C for 30 seconds. The package uses matte tin plating and meets IPC/JEDEC moisture sensitivity level 1 (MSL-1), eliminating bake requirements prior to assembly.

IRF7726TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2204 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1.79W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: Micro8™

IRF7726TRPBF FAQ

1.How can I place an order for IRF7726TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7726TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7726TRPBF reliable?

The price and inventory of IRF7726TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7726TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7726TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7726TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7726TRPBF?

IRF7726TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7726TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7726TRPBF?

For technical support, including IRF7726TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7726TRPBF requirements.

6.How does Aetrix verify that IRF7726TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7726TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7726TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7726TRPBF?

All IRF7726TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7726TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7726TRPBF part is unused and in its original packaging.

Return procedure for IRF7726TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…