Infineon Technologies IRF7739L2TR1PBF

Overview

IRF7739L2TR1PBF from Infineon Technologies is an N-channel 40V DirectFET™ Power MOSFET optimized for high-frequency synchronous rectification and isolated DC-DC converter primary-side switching, featuring 0.70 mΩ R_DS(on) at V_GS = 10 V, 220 nC total gate charge, and dual-sided cooling capability in a low-profile (<0.7 mm) surface-mount package. It delivers 160 A continuous drain current at T_C = 25°C and supports unclamped inductive switching with 1070 mJ single-pulse avalanche energy.

For engineers reviewing the IRF7739L2TR1PBF datasheet, IRF7739L2TR1PBF pinout, IRF7739L2TR1PBF application, or IRF7739L2TR1PBF equivalent, key selection criteria include ultra-low conduction loss, high C_dv/dt immunity (1240 pF Crss), thermal performance under double-sided heatsinking, and compatibility with standard SMT reflow profiles up to 260°C.

Technical Context

This MOSFET employs HEXFET® silicon on a DirectFET2 Large Can substrate, enabling a footprint smaller than D2PAK while achieving sub-1 mΩ on-resistance. Its gate threshold voltage of 2.8 V (typ.) and negative temperature coefficient (−6.7 mV/°C) support stable parallel operation across wide temperature ranges.

The device integrates a robust body diode with 1.3 V forward voltage at 160 A and 87 ns reverse recovery time, supporting high-efficiency synchronous rectification. Its transient thermal impedance (Z_thJC) reaches 0.10 °C/W at t = 0.01 s under dual-sided cooling-critical for high-power density converters operating above 500 kHz.

Key Specifications

Pinout & Package

IRF7739L2TR1PBF uses the DirectFET2 Large Can package: top-side drain (D), bottom-side source (S), and perimeter-mounted gate (G). The package enables dual-sided thermal interface-drain connects directly to heatsink, source to PCB copper-without wire bonds or leadframes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7739L2TR1PBF, IRF7737L2TR1PBF trades 35% higher R_DS(on) for 14% lower Q_g, making it preferable in gate-loss-dominated low-duty-cycle applications; IXFN140N10P offers higher voltage margin but sacrifices thermal performance and board-area efficiency due to legacy TO-packaging.

Availability

IRF7739L2TR1PBF is available at Aetrix Electronics and suitable for server power supplies, industrial isolated DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for Class B safety-critical designs.

Supply support for IRF7739L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET™ product line targets high-efficiency, high-power-density switching applications-specifically engineered to replace through-hole and large SMD packages in datacenter, telecom, and EV infrastructure where thermal and space constraints dominate design.

FAQ

What is the maximum allowable case temperature for continuous operation?

The IRF7739L2TR1PBF supports continuous operation up to T_C = 100°C, delivering 46 A continuous drain current at that temperature. Derating curves confirm safe operation at 270 A only when T_C ≤ 25°C. Thermal design must maintain case temperature below 100°C under worst-case ambient and airflow conditions to avoid exceeding the 175°C maximum junction temperature.

Is this MOSFET suitable for paralleling in high-current designs?

Yes-the device's negative R_DS(on) temperature coefficient (−0.008 Ω/°C) and matched threshold voltage (2.8 V typ., ±0.6 V) ensure inherent current sharing across parallel units. Application note AN-1035 specifies minimum spacing (≥2 mm) and symmetric gate routing to prevent oscillation; no external current-sharing resistors are required for ≤4-device arrays.

Does the body diode support synchronous rectification without external drivers?

No-the body diode is not intended for controlled synchronous rectification; it serves only as a freewheeling path during dead time. For true synchronous rectification, an external gate driver (e.g., IR11672) must actively control the MOSFET channel using sensed V_DS polarity, leveraging the device's 87 ns t_rr and low Q_rr (250 nC) to minimize switching loss.

What stencil thickness and aperture ratio are recommended for DirectFET2 Large Can assembly?

Per Infineon application note AN-1035, use a 0.15 mm stainless-steel stencil with 1:1 aperture ratio for the top drain pad and 0.12 mm thickness for the bottom source pad. Aperture openings must match the exact metalized areas-no solder mask defined (SMD) pads-to ensure void-free thermal interface and mechanical adhesion under thermal cycling.