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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7739L2TRPBF

Name: IRF7739L2TRPBF
Brand: Infineon Technologies
SKU: IRF7739L2TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7739L2TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: IRF7739L2TRPBF.pdf

Description:: MOSFET N-CH 40V 46A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7739L2TRPBF from Infineon Technologies is an N-channel 40V DirectFET™ Power MOSFET optimized for high-frequency synchronous rectification and primary-side switching in isolated DC-DC converters. It delivers 0.70 mΩ R_DS(on) at V_GS = 10 V, 220 nC total gate charge, and supports 160 A pulsed drain current with dual-sided cooling capability in a low-profile (<0.7 mm) surface-mount package.

For engineers reviewing the IRF7739L2TRPBF datasheet, IRF7739L2TRPBF pinout, IRF7739L2TRPBF application, or IRF7739L2TRPBF equivalent, key selection criteria include on-resistance vs. temperature stability, avalanche energy rating (1070 mJ), gate charge profile for ZVS/ZCS compatibility, and thermal resistance to case (1.2 °C/W) under double-sided heatsinking.

Technical Context

This MOSFET employs HEXFET® silicon with trench-gate process and is packaged in Infineon's DirectFET2 Large Can format - a top- and bottom-metalized copper can enabling direct thermal contact to both PCB and heatsink. Its gate threshold voltage (2.8 V typ.) and negative temperature coefficient of R_DS(on) support stable parallel operation.

The device features high C_dv/dt immunity (≥50 V/ns), low reverse recovery charge (Q_rr = 250–380 nC), and fast switching (t_r = 71 ns, t_f = 42 ns) due to minimized gate-drain charge (Q_gd = 81 nC) and output capacitance (C_oss = 2510 pF at V_DS = 10 V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for primary-side switch in 12–24 V input isolated converters
R_DS(on)	0.70 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 160 A, critical for >98% efficiency designs
Q_g	220 nC - Gate drive energy demand dictates driver IC selection and layout parasitic sensitivity
I_DM	1070 A - Peak pulsed current rating supports unclamped inductive switching with robust SOA margin
E_AS	1070 mJ - Single-pulse avalanche energy enables reliable operation during transient overvoltage events
R_θJ-Can	1.2 °C/W - Thermal path from junction to metal can enables <30 °C rise at 270 W dissipation with dual cooling
V_GS(th)	2.8 V (typ.) - Low threshold allows logic-level gate drive while maintaining noise immunity above 2.0 V min

Pinout & Package

IRF7739L2TRPBF uses the DirectFET2 Large Can package: a copper-can, top- and bottom-surface-mountable power package with integrated drain (top and bottom), source (bottom only), and gate (bottom edge). No external leads; terminals are soldered directly to PCB pads and heatsink surfaces.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-side connection; thermally coupled to heatsink and PCB ground plane for dual cooling
Bottom Center Pad	Source (S)	Low-impedance return path; connects to PCB source net and provides mechanical anchoring
Bottom Edge Pad	Gate (G)	Control terminal with 1.5 Ω internal gate resistance; requires low-inductance gate loop for fast switching

Key Features

Feature	Design Value
DirectFET2 packaging	Enables simultaneous top- and bottom-side thermal interface - reduces R_θJA by up to 60% vs. D2PAK
0.70 mΩ R_DS(on)	Lowers conduction losses by ≥35% compared to 1.1 mΩ alternatives at 160 A, extending thermal headroom
High C_dv/dt immunity	Withstands >50 V/ns voltage transients without spurious turn-on - eliminates need for external gate clamping
Low Q_gd/Q_g ratio	36.8% (81/220 nC) - improves hard-switching efficiency and reduces Miller-induced oscillation risk
Body diode Q_rr	250–380 nC - Enables efficient synchronous rectification with minimal reverse recovery loss in LLC resonant converters

Applications

Server VRM Output Stage

Telecom Isolated DC-DC Primary Switch

Use Scenario: High-current, low-voltage point-of-load regulation in 1U server motherboards using multiphase buck converters.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in high-side position, operating at 300–600 kHz with tight dead-time control.

Use Value: 0.70 mΩ R_DS(on) cuts conduction loss by 42% vs. legacy 1.2 mΩ devices, reducing board-level temperature rise by 12°C at 200 A.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated full-bridge DC-DC modules for 5G base station power supplies.

IC Role / Device Role / Timing Role: High-side switching element in zero-voltage switching (ZVS) full-bridge topology, driven with 100 ns dead time.

Use Value: 220 nC Q_g and 81 nC Q_gd enable clean ZVS transition with <5% voltage overshoot, improving EMI and efficiency by 0.8%.

Industrial Motor Drive Half-Bridge

EV On-Board Charger (OBC) LLC Rectifier

Use Scenario: 24–48 V motor control in servo drives requiring high peak current and short-circuit ruggedness.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration handling repetitive 1070 A surge currents during stall conditions.

Use Value: 1070 mJ E_AS rating ensures single-pulse fault tolerance without derating, eliminating need for external crowbar protection.

Use Scenario: Secondary-side synchronous rectifier in 3.3 kW bidirectional OBC using asymmetric LLC topology.

IC Role / Device Role / Timing Role: Body-diode-conducting rectifier during light load, transitioning to active synchronous mode above 10% load.

Use Value: 250–380 nC Q_rr and 1.3 V V_SD minimize reverse recovery loss and forward drop, increasing light-load efficiency by 2.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7750L2TRPBF	Same DirectFET2 package, but 60 V V_DSS, 1.1 mΩ R_DS(on), 280 nC Q_g	Higher voltage margin for 48 V bus systems; higher conduction and switching loss	Select when system requires >45 V blocking with same footprint and thermal interface
SiR626DP-T1-GE3	60 V, 0.95 mΩ, 120 nC Q_g, PowerPAK® 8x8 package, R_θJA = 2.0 °C/W	No dual-sided cooling; lower gate charge but higher R_DS(on) and worse thermal resistance	Prefer for space-constrained layouts where top-side heatsinking is impractical

Compared with IRF7739L2TRPBF, IRF7750L2TRPBF trades lower on-resistance for higher voltage rating and gate charge, while SiR626DP sacrifices dual cooling and thermal performance for reduced gate drive complexity - making IRF7739L2TRPBF optimal for thermally demanding, high-efficiency synchronous rectification.

Availability

IRF7739L2TRPBF is available at Aetrix Electronics and suitable for high-performance isolated DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply, long-lifecycle availability, and traceable sourcing.

Supply support for IRF7739L2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for ultra-low-loss, high-frequency power conversion in datacenter, telecom, and EV infrastructure where thermal density and switching efficiency are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF7739L2TRPBF supports 270 A continuous drain current at T_C = 100°C with V_GS = 10 V, limited by silicon thermal capacity rather than package constraints. This rating assumes proper double-sided cooling and PCB copper area per AN-1035 guidelines - exceeding this current risks junction temperature exceedance beyond 175°C.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor (typically 2–10 Ω) is required to dampen ringing and control dV/dt during switching transitions. The device's internal gate resistance is only 1.5 Ω, insufficient to suppress oscillations in high-di/dt applications like synchronous rectification. Layout inductance and driver strength must be co-optimized with external R_G to achieve clean turn-on/turn-off waveforms.

Can IRF7739L2TRPBF be used in avalanche mode repeatedly?

No - the 1070 mJ E_AS rating is specified for single-pulse avalanche only. Repetitive avalanche operation is not characterized or guaranteed. Safe operation requires ensuring that all transient overvoltage events remain within the SOA boundary defined in Figure 11 and that junction temperature never exceeds 175°C during any pulse.

Is the DirectFET2 package compatible with standard reflow profiles?

Yes - the IRF7739L2TRPBF is qualified for lead-free reflow up to 260°C peak temperature and complies with JEDEC J-STD-020. Successful assembly requires strict adherence to Infineon Application Note AN-1035, including stencil design, pad geometry, and vapor-phase or convection reflow profiling to ensure void-free solder joints on both top and bottom metal surfaces.

IRF7739L2TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Ta), 375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1mOhm @ 160A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 330 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 11880 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

IRF7739L2TRPBF FAQ

1.How can I place an order for IRF7739L2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7739L2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7739L2TRPBF reliable?

The price and inventory of IRF7739L2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7739L2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7739L2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7739L2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7739L2TRPBF?

IRF7739L2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7739L2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7739L2TRPBF?

For technical support, including IRF7739L2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7739L2TRPBF requirements.

6.How does Aetrix verify that IRF7739L2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7739L2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7739L2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7739L2TRPBF?

All IRF7739L2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7739L2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7739L2TRPBF part is unused and in its original packaging.

Return procedure for IRF7739L2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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