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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7748L1TRPBF

Name: IRF7748L1TRPBF
Brand: Infineon Technologies
SKU: IRF7748L1TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7748L1TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L6

Datasheet:: IRF7748L1TRPBF.pdf

Description:: MOSFET N-CH 60V 28A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7748L1TRPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 148A N-channel enhancement-mode Power MOSFET in DirectFET™ L6 package, optimized for high-frequency synchronous rectification and isolated DC-DC converter primary-side switching. It delivers 1.7 mΩ R_DS(on) at V_GS = 10 V, 146 nC total gate charge, and supports dual-sided cooling with <0.7 mm profile.

For engineers reviewing the IRF7748L1TRPBF datasheet, IRF7748L1TRPBF pinout, IRF7748L1TRPBF application, or IRF7748L1TRPBF equivalent, key selection criteria include low conduction loss under high-current pulsed operation, high C_dv/dt immunity for noisy power stages, thermal performance with junction-to-case resistance of 1.6 °C/W, and compatibility with standard SMT reflow up to 260°C.

Technical Context

This MOSFET employs HEXFET® silicon on a copper-can DirectFET™ L6 substrate, enabling ultra-low R_DS(on) and minimized package inductance. Its gate threshold voltage (2.9 V typ.) and steep transconductance (176 S) support fast, robust turn-on in hard-switched topologies.

The device features integrated body diode with 113 nC Q_rr and 58 ns t_rr, enabling efficient synchronous rectification without external Schottky replacement. Its 1.3 V V_SD at 89 A and high avalanche energy rating (129 mJ single-pulse) ensure reliability in unclamped inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage for primary-side switch in 48 V input DC-DC converters
R_DS(on)	1.7 mΩ @ 10 V - Enables <1 W conduction loss at 89 A continuous drain current
Q_g	146 nC - Determines gate drive power requirement and switching speed in 100–500 kHz designs
I_D (T_C = 25°C)	148 A - Silicon-limited current capacity under heatsink-cooled conditions
t_r/t_f	104 ns / 77 ns - Supports clean, low-loss transitions in high-frequency ZVS/ZCS topologies
C_iss/C_oss	8075 pF / 1150 pF - Low output capacitance reduces turn-off energy and improves light-load efficiency
Z_thJC	1.6 °C/W - Enables direct thermal coupling to heatsink or PCB copper, critical for dual-sided cooling

Pinout & Package

IRF7748L1TRPBF uses the DirectFET™ L6 package: a low-profile (0.7 mm), copper-can, surface-mount structure with six parallel source terminals, one gate pad, and drain connected to the entire bottom metal can. The package enables dual-sided cooling and eliminates bond wires for lower parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
D (Drain)	High-current power return path	Entire bottom copper can - serves as primary thermal and electrical path to PCB ground plane or heatsink
G (Gate)	Control input	Single top-side pad - requires low-inductance gate loop layout to minimize oscillation during 100+ A switching
S1–S6 (Source)	Power reference and current return	Six discrete top-side pads - distributed to reduce current crowding and improve current sharing in paralleled layouts

Key Features

Feature	Design Value
DirectFET™ L6 packaging	0.7 mm profile and dual-sided cooling capability - reduces thermal resistance by >50% vs. D2PAK in same footprint
Low R_DS(on) × Q_g figure-of-merit	249 Ω·nC - minimizes combined conduction and switching losses in high-efficiency SMPS
High C_dv/dt immunity	Rated for noisy high-dV/dt environments - prevents false turn-on in half-bridge and LLC resonant converters
Optimized body diode	Q_rr = 113 nC, t_rr = 58 ns - enables reliable synchronous rectification without reverse recovery spikes
RoHS-compliant & halogen-free	Lead-free reflow qualified to 260°C - meets IPC/JEDEC J-STD-020D for industrial and telecom manufacturing

Applications

Isolated Forward Converter Primary Switch

LLC Resonant Converter Synchronous Rectifier

Use Scenario: High-efficiency 48 V input, 12 V/100 A output telecom power supply operating at 250–500 kHz.

IC Role / Device Role / Timing Role: Primary-side MOSFET handling full input voltage and high peak currents during PWM switching.

Use Value: 1.7 mΩ R_DS(on) and 1.6 °C/W Z_thJC enable <95% efficiency at full load while maintaining T_J < 125°C.

Use Scenario: Server PSU using LLC topology with secondary-side synchronous rectification for 12 V output.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes, driven with precise timing relative to resonant tank zero-crossings.

Use Value: Low Q_rr (113 nC) and fast t_rr (58 ns) suppress reverse-recovery ringing, reducing EMI and improving light-load regulation.

Industrial Motor Drive Half-Bridge Leg

High-Density DC-DC Brick Converter

Use Scenario: 24–48 V input motor control module driving brushed DC or BLDC gate drivers.

IC Role / Device Role / Timing Role: High-side or low-side switch in half-bridge configuration, subject to shoot-through risk and high dI/dt.

Use Value: High C_dv/dt immunity prevents spurious turn-on during cross-conduction events, enhancing system robustness.

Use Scenario: 3 kW, 1U rack-mounted DC-DC brick converting 48 V to 12 V at >96% peak efficiency.

IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge topology with forced-air and conduction cooling.

Use Value: Dual-sided cooling compatibility allows simultaneous heatsink contact on top and bottom, enabling 148 A continuous current in <10 cm² board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7758L1TRPBF	Same L6 package, but 40 V V_DS, 2.0 mΩ R_DS(on), higher I_D (160 A)	Better suited for 24–36 V input systems where lower voltage rating permits tighter gate drive margins	Select when system max V_DS stress is <45 V and higher current headroom is needed over 60 V rating
IPB180N04S4-02	40 V, 1.8 mΩ, TO-263-7 package, 180 A rating, lower Q_g (120 nC)	Larger footprint and single-sided cooling only; less suitable for ultra-thin or dual-cooled modules	Prefer when PCB layout allows TO-263-7 and gate drive power budget is constrained more than thermal budget

Compared with IRF7748L1TRPBF, IRF7758L1TRPBF trades 20 V headroom for marginally higher current and identical thermal interface, while IPB180N04S4-02 offers lower gate charge but sacrifices the DirectFET™ L6's dual-sided cooling advantage and compact height - making IRF7748L1TRPBF optimal for space-constrained, thermally aggressive 48 V systems.

Availability

IRF7748L1TRPBF is available at Aetrix Electronics and suitable for isolated DC-DC converters, synchronous rectifiers, and industrial motor drives requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF7748L1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-power-density switched-mode power supplies and motor control systems demanding ultra-low R_DS(on) and superior thermal performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF7748L1TRPBF supports 104 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and thermal interface design per application note AN-1035, and reflects silicon-limited conduction capability under steady-state thermal conditions.

Does this MOSFET require special PCB layout considerations for the DirectFET™ L6 package?

Yes - the DirectFET™ L6 package demands symmetric copper pour under the drain can and dedicated thermal vias beneath all six source pads. Stencil design must follow AN-1035 guidelines to ensure uniform solder paste deposition and void-free reflow, especially for the large-area drain land pattern.

Can IRF7748L1TRPBF be used in avalanche mode for protection?

Yes - it is rated for 129 mJ single-pulse avalanche energy (E_AS) with I_AS = 89 A and L = 33 µH. Safe repetitive avalanche operation requires strict thermal management and duty-cycle limiting per Figures 15–16 and AN-1005, with junction temperature held below 175°C.

What is the typical gate threshold voltage and its temperature coefficient?

The typical gate threshold voltage is 2.9 V at T_J = 25°C, with a negative temperature coefficient of −9.9 mV/°C. This means V_GS(th) decreases linearly with rising junction temperature, supporting stable turn-on behavior across industrial temperature ranges.

IRF7748L1TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: DirectFET™ Isometric L6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 148A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 89A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8075 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 94W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET L6

IRF7748L1TRPBF FAQ

1.How can I place an order for IRF7748L1TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7748L1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7748L1TRPBF reliable?

The price and inventory of IRF7748L1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7748L1TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7748L1TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7748L1TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7748L1TRPBF?

IRF7748L1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7748L1TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7748L1TRPBF?

For technical support, including IRF7748L1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7748L1TRPBF requirements.

6.How does Aetrix verify that IRF7748L1TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7748L1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7748L1TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7748L1TRPBF?

All IRF7748L1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7748L1TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7748L1TRPBF part is unused and in its original packaging.

Return procedure for IRF7748L1TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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