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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7749L2TR1PBF

Name: IRF7749L2TR1PBF
Brand: Infineon Technologies
SKU: IRF7749L2TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7749L2TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: IRF7749L2TR1PBF.pdf

Description:: MOSFET N-CH 60V 33A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7749L2TR1PBF from Infineon Technologies is a 60 V, 120 A N-channel Power MOSFET in DirectFET2 Large Can package, featuring 1.1 mΩ R_DS(on) @ 10 V, 200 nC total gate charge, and optimized for high-frequency synchronous rectification in isolated DC-DC converters. Its dual-sided cooling capability, 0.7 mm profile, and RoHS/halogen-free construction support high-density, thermally demanding power stages.

For engineers reviewing the IRF7749L2TR1PBF datasheet, IRF7749L2TR1PBF pinout, IRF7749L2TR1PBF application, or IRF7749L2TR1PBF equivalent, key selection criteria include low conduction loss at high current (120 A), high C_dv/dt immunity for noisy primary-side switching, thermal performance under double-sided heatsinking, and compatibility with standard SMT reflow up to 260°C.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET™ packaging to minimize parasitic inductance and thermal resistance-R_θJ-Can = 1.2°C/W and R_θJ-PCB = 0.5°C/W-enabling efficient dual-sided cooling. Its gate threshold voltage (2.0–4.0 V) and low Q_gd/Q_g ratio (71/200 nC) support fast, controllable turn-on/turn-off in hard-switched and resonant topologies.

The device is rated for repetitive unclamped inductive switching (UIS) up to 1200 mJ at T_J = 25°C and exhibits robust body diode recovery (t_rr = 45–68 ns, Q_rr = 78–120 nC), critical for synchronous rectifier operation where reverse recovery stress is present during commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V input bus designs with margin for transient overvoltage in telecom/server PSUs.
R_DS(on)	1.1 mΩ @ 10 V - Enables <1.5 W conduction loss at 120 A, reducing heat sink requirements in high-current paths.
Q_g	200 nC - Dictates gate driver power and switching loss; requires ≥2 A peak drive capability for sub-100 ns transitions.
I_D (T_C = 25°C)	120 A - Silicon-limited continuous current rating under ideal heatsinking conditions.
t_rr	45–68 ns - Fast body diode recovery minimizes shoot-through risk and EMI in synchronous buck/LLC rectifiers.
R_θJ-Can	1.2°C/W - Enables direct thermal interface to both PCB and external heatsink, improving system thermal budget by ~40% vs. D2PAK.

Pinout & Package

IRF7749L2TR1PBF uses the DirectFET2 Large Can package: ultra-low-profile (0.7 mm), copper-can construction with exposed drain on top and bottom surfaces for dual-sided cooling. The package footprint is smaller than D2PAK and compatible with standard SMT assembly per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain (D)	High-current power output / thermal path	Exposed copper surface for top-side heatsinking; electrically connected to all internal die drains.
Bottom Drain (D)	High-current return path / thermal path	Full-area copper substrate contact for PCB-level thermal conduction and current return.
Source (S)	Power return reference / gate drive reference	Multiple solderable pads on perimeter; low-inductance connection critical for gate loop stability.
Gate (G)	Control terminal for channel modulation	Single dedicated pad; requires short, low-inductance routing to minimize ringing and switching overshoot.

Key Features

Feature	Design Value
DirectFET2 packaging	Enables dual-sided cooling and reduces package inductance by >50% vs. TO-220, improving EMI and efficiency in high-dI/dt applications.
1.1 mΩ R_DS(on)	Lowers conduction losses by ~35% compared to comparable 60 V D2PAK MOSFETs at 100 A, directly increasing converter efficiency above 95%.
High C_dv/dt immunity	Withstands >50 V/ns voltage transients without false turn-on-critical for primary-side switches in phase-shifted full-bridge converters.
RoHS/halogen-free, 260°C reflow qualified	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), eliminating bake requirements and supporting high-yield automated assembly.

Applications

Server VRM Output Stage

Telecom 48 V DC-DC Converter

Use Scenario: High-current, low-voltage point-of-load regulation delivering up to 300 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with tight dead-time control.

Use Value: 1.1 mΩ R_DS(on) and 45 ns t_rr reduce conduction + recovery losses by 2.1 W per phase vs. legacy SO-8 devices, enabling higher power density.

Use Scenario: Isolated half-bridge or full-bridge secondary-side synchronous rectification in 48 V input telecom rectifiers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier handling 120 A continuous current with fast body diode commutation.

Use Value: Dual-sided cooling maintains T_J < 105°C at full load with passive heatsinking, eliminating need for forced air in NEBS-compliant systems.

Industrial Motor Drive Inverter

EV On-Board Charger (OBC) LLC Rectifier

Use Scenario: 3-phase IGBT gate driver auxiliary supply with high-efficiency 24 V buck converter.

IC Role / Device Role / Timing Role: Primary-side high-side switch in 200–500 kHz flyback or active clamp forward converter.

Use Value: 60 V rating and 1200 mJ UIS energy rating ensure reliable operation during motor fault-induced bus transients.

Use Scenario: Secondary-side synchronous rectifier in bidirectional CLLC resonant converter for 6.6 kW OBC.

IC Role / Device Role / Timing Role: High-current, zero-voltage-switching (ZVS)-assisted rectifier operating at 200–350 kHz.

Use Value: Low Q_gd/Q_g ratio (0.355) improves ZVS soft-switching margin, reducing switching loss by 30% vs. discrete alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7750L2TR1PBF	Same DirectFET2 package, but P-channel; V_DS = −60 V, R_DS(on) = 1.3 mΩ @ −10 V	Used in high-side synchronous rectification or load switch configurations requiring P-ch logic	Select when gate drive polarity or topology (e.g., common-source high-side) mandates P-channel behavior.
IXFN140N60P3	TO-264 package; 600 V rating, R_DS(on) = 11.5 mΩ @ 10 V, higher Q_g (320 nC)	Targeted at high-voltage industrial inverters-not suitable for 48 V synchronous rectification due to excessive conduction loss	Only consider for 400 V+ bus applications; not a functional substitute for IRF7749L2TR1PBF's low-voltage, high-current role.

Compared with IRF7749L2TR1PBF, the IRF7750L2TR1PBF offers complementary P-channel functionality in identical form factor but requires inverted gate drive, while IXFN140N60P3 serves entirely different voltage-class applications and cannot replace it in 48–60 V high-efficiency rectifiers due to 10× higher R_DS(on) and incompatible thermal profile.

Availability

IRF7749L2TR1PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and EV on-board charger rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-reliability production.

Supply support for IRF7749L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies-including datacenter, telecom, and EV infrastructure-where low R_DS(on), fast switching, and thermal robustness are critical.

FAQ

What is the maximum continuous drain current for IRF7749L2TR1PBF at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 140 A (silicon-limited) per the Absolute Maximum Ratings table. This assumes proper dual-sided cooling and gate drive at V_GS = 10 V. Derating applies if heatsinking is insufficient or ambient temperature exceeds 25°C.

Does IRF7749L2TR1PBF support wave soldering or only reflow?

IRF7749L2TR1PBF is qualified only for lead-free reflow soldering up to 260°C peak temperature (per J-STD-020 MSL-1). Wave soldering is not recommended due to thermal stress on the DirectFET2 copper can and potential delamination; use stencil-printed solder paste and convection/reflow per AN-1035 guidelines.

How does the body diode performance compare to discrete Schottky alternatives in synchronous rectification?

Its body diode has V_SD = 1.3 V max and t_rr = 45–68 ns-higher forward drop than Schottky diodes but significantly faster recovery than standard MOSFETs. In ZVS/ZCS topologies, this enables lower overall loss than Schottky + MOSFET hybrid solutions due to elimination of parallel component mismatch and layout parasitics.

Is the DirectFET2 Large Can footprint compatible with standard pick-and-place equipment?

Yes-the DirectFET2 Large Can uses industry-standard land patterns and stencil apertures defined in AN-1035. Its flat, rigid copper structure ensures high placement accuracy and solder joint reliability on automated SMT lines, including those using vision-guided placement and 0.5 mm pitch nozzles.

IRF7749L2TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Ta), 375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5mOhm @ 120A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 12320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

IRF7749L2TR1PBF FAQ

1.How can I place an order for IRF7749L2TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7749L2TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7749L2TR1PBF reliable?

The price and inventory of IRF7749L2TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7749L2TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF7749L2TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7749L2TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7749L2TR1PBF?

IRF7749L2TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7749L2TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7749L2TR1PBF?

For technical support, including IRF7749L2TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7749L2TR1PBF requirements.

6.How does Aetrix verify that IRF7749L2TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7749L2TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7749L2TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF7749L2TR1PBF?

All IRF7749L2TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7749L2TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7749L2TR1PBF part is unused and in its original packaging.

Return procedure for IRF7749L2TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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