Infineon Technologies IRF7749L2TRPBF

Overview

IRF7749L2TRPBF from Infineon Technologies is a 60 V, 120 A N-channel enhancement-mode Power MOSFET in DirectFET2 Large Can package, featuring 1.1 mΩ R_DS(on) at V_GS = 10 V, 200 nC total gate charge, and optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers low conduction loss, high dv/dt immunity, and dual-sided cooling capability.

For engineers reviewing the IRF7749L2TRPBF datasheet, IRF7749L2TRPBF pinout, IRF7749L2TRPBF application, or IRF7749L2TRPBF equivalent, key selection criteria include on-resistance vs. temperature stability, avalanche energy rating (1200 mJ), thermal resistance (R_θJ-Can = 1.2 °C/W), and compatibility with existing SMT reflow profiles up to 260 °C.

Technical Context

This MOSFET employs HEXFET silicon with trench-gate structure and is packaged in DirectFET2 - a copper-clip, top-side-drain, double-sided-cooled configuration enabling <0.7 mm profile and footprint smaller than D2PAK. Its gate threshold voltage (2.9 V typ) and low Q_gd/Q_g ratio (71/200 nC) support fast, robust switching in hard-switched and resonant topologies.

The device exhibits strong thermal coupling between junction and case (R_θJ-Can = 1.2 °C/W), supports repetitive unclamped inductive switching up to I_AS = 120 A, and maintains R_DS(on) drift of only +0.03 V/°C breakdown coefficient - critical for stable operation across -55 °C to +175 °C junction range.

Key Specifications

Pinout & Package

IRF7749L2TRPBF uses the DirectFET2 Large Can package: top-side drain contact, bottom-side source/gate terminals, 0.65 mm height, and copper-clip construction enabling dual-sided thermal management. The package is RoHS-compliant, halogen-free, and qualified for lead-free reflow up to 260 °C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) Power MOSFET applications.

Compared with IPP020N06N and SiR626DP, IRF7749L2TRPBF provides superior thermal extraction (1.2 °C/W), lower R_DS(on), and smaller footprint - making it optimal for ultra-dense, air-cooled 1 kW/in³ power supplies where junction temperature margin directly impacts reliability.

Availability

IRF7749L2TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial isolated DC-DC converters, and automotive on-board chargers requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IRF7749L2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies operating above 100 kHz with stringent thermal and reliability requirements.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The IRF7749L2TRPBF supports 140 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating is silicon-limited and assumes proper PCB copper area and thermal interface to maintain case temperature at 100 °C under steady-state conditions.

Is IRF7749L2TRPBF compatible with standard reflow soldering processes?

Yes - the device is qualified for lead-free reflow up to 260 °C per JEDEC J-STD-020, and its DirectFET2 package is compatible with vapor-phase, infrared, and convection reflow. Application note AN-1035 provides validated stencil design, pad layout, and process parameters for reliable assembly.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes - it features a monolithic N-channel MOSFET with integral reverse p–n junction body diode. Key diode specs: V_SD = 1.3 V max at 120 A, t_rr = 45–68 ns, and Q_rr = 78–120 nC at di/dt = 100 A/μs and T_J = 25 °C. These values are measured under standardized unclamped inductive test conditions.

How does the DirectFET2 package improve thermal performance over traditional SO-8 or D2PAK?

The DirectFET2 package uses a copper-clip structure with top-side drain and bottom-side source/gate, enabling thermal paths from both sides of the die. Measured R_θJ-Can = 1.2 °C/W and R_θJ-PCB = 0.5 °C/W - up to 3× better than D2PAK - due to minimized bond wire inductance and direct metal-to-metal thermal interface without epoxy barriers.