Infineon Technologies IRF7759L2TR1PBF

Overview

IRF7759L2TR1PBF from Infineon Technologies is a 75 V, 1.8 mΩ N-channel Power MOSFET in DirectFET2 Large Can package, optimized for high-frequency synchronous rectification and primary-side switching in isolated DC-DC converters. It delivers 96 A continuous drain current at TC = 25°C, features ±20 V gate rating, 200 nC total gate charge, and dual-sided cooling capability for thermal management in high-density power stages.

For engineers reviewing the IRF7759L2TR1PBF datasheet, IRF7759L2TR1PBF pinout, IRF7759L2TR1PBF application, or IRF7759L2TR1PBF equivalent, key selection criteria include R_DS(on) @ 10 V, avalanche energy rating (1200 mJ), gate charge profile, thermal resistance (R_θJ-Can = 1.2 °C/W), and compatibility with surface-mount reflow up to 260°C.

Technical Context

This MOSFET employs HEXFET silicon with trench-gate process and low-inductance DirectFET2 packaging to minimize conduction and switching losses. Its 1.8 mΩ R_DS(on) at V_GS = 10 V and 96 A ID enables high-efficiency operation in 48 V–60 V input isolated topologies such as LLC resonant and phase-shifted full-bridge converters.

The device integrates a robust body diode with 150–225 nC Q_rr, 64–96 ns t_rr, and 1.3 V V_SD at 96 A, supporting hard-switched and synchronous rectifier modes. High C_dV/dt immunity and 75 V BVDSS support reliable operation under transient overvoltage conditions in industrial and telecom power supplies.

Key Specifications

Pinout & Package

IRF7759L2TR1PBF uses the DirectFET2 Large Can package: ultra-low-profile (0.7 mm), top-side drain metal pad, bottom-side source/gate terminals, and dual-sided thermal interface. The package footprint is smaller than D2PAK but supports higher current density and improved thermal transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) Power MOSFET applications.

Compared with IXFN120N75X3 and STL220N75F7, IRF7759L2TR1PBF uniquely combines sub-2 mΩ R_DS(on), top-drain thermal interface, and 1200 mJ avalanche capability-making it the only option suitable for high-reliability, high-power-density primary switches requiring both electrical and thermal headroom.

Availability

IRF7759L2TR1PBF is available at Aetrix Electronics and suitable for telecom rectifiers, server PSUs, industrial isolated converters, and EV onboard charger stages requiring stable component supply, long lifecycle support, and traceable sourcing.

Supply support for IRF7759L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in mission-critical infrastructure-specifically targeting isolated DC-DC topologies where low R_DS(on), fast switching, and thermal robustness are non-negotiable.

FAQ

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS is ±20 V. Operation above +20 V risks oxide breakdown; below –20 V may cause gate damage. For robust design, keep V_GS between +12 V and +15 V for full enhancement and –5 V to –10 V for fast turn-off, respecting the 3.0 V typical threshold and –11 mV/°C temperature coefficient.

How does the DirectFET2 Large Can package improve thermal performance over D2PAK?

The DirectFET2 package eliminates bond wires and plastic molding compound, reducing thermal resistance from junction to case to 1.2 °C/W (vs. ~2.5 °C/W for D2PAK). Its top-side drain pad enables direct heatsink mounting, while bottom source pads allow simultaneous PCB copper cooling-achieving up to 40% lower steady-state T_j at identical power dissipation.

Can IRF7759L2TR1PBF be used as a synchronous rectifier in a 12 V output LLC converter?

Yes-it is explicitly optimized for this role. With 150–225 nC Q_rr, 64–96 ns t_rr, and 1.3 V V_SD at 96 A, it minimizes reverse recovery loss and conduction loss in secondary-side synchronous rectification. Its low gate charge (200 nC) also supports precise timing control with standard gate drivers.

Is avalanche capability rated for repetitive operation?

No-E_AS = 1200 mJ is a single-pulse rating. Repetitive avalanche is not guaranteed and must be avoided in normal operation. Safe operation requires ensuring that unclamped inductive energy never exceeds E_AS per pulse and that junction temperature remains below 175°C, using transient thermal impedance curves (Figure 3) for pulse-width-dependent derating.