Infineon Technologies IRF7759L2TRPBF

Overview

IRF7759L2TRPBF from Infineon Technologies is a 75V, 1.8mΩ N-channel Power MOSFET in DirectFET2 Large Can package, optimized for high-frequency synchronous rectification and primary-side switching in isolated DC-DC converters. It delivers 96A continuous drain current at TC = 25°C, features ±20V gate rating, 200nC total gate charge, and dual-sided cooling capability for thermal management in compact power stages.

For engineers reviewing the IRF7759L2TRPBF datasheet, IRF7759L2TRPBF pinout, IRF7759L2TRPBF application, or IRF7759L2TRPBF equivalent, key selection criteria include R_DS(on) @ 10V, avalanche energy (E_AS = 640 mJ), C_iss (12.2 nF), thermal resistance R_θJ-Can (1.2°C/W), and compatibility with 260°C reflow soldering per J-STD-020.

Technical Context

This MOSFET employs HEXFET silicon with trench-gate structure and low-inductance DirectFET2 packaging to minimize conduction and switching losses simultaneously. Its 1.8mΩ R_DS(on) at V_GS = 10V and 25°C enables high-efficiency operation in 48V–60V input isolated topologies such as LLC resonant and phase-shifted full-bridge converters.

The device integrates a robust body diode with 150–225nC Q_rr and 64–96ns t_rr, supporting hard-switched synchronous rectification without external Schottky clamping. Its high C_dv/dt immunity and 75V BVDSS rating ensure stable operation under fast transient voltage stress in high dI/dt environments.

Key Specifications

Pinout & Package

IRF7759L2TRPBF uses the DirectFET2 Large Can package: ultra-low profile (<0.7mm), dual-sided cooling enabled, surface-mount compatible, with Drain terminals on top and Source/Gate on bottom substrate. The package footprint is smaller than D2PAK but delivers superior thermal performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) Power MOSFET applications.

Compared with IRF7759L2TRPBF, IRF7750L2TRPBF trades 25V extra breakdown for 0.4mΩ higher R_DS(on), while SiR626DP offers marginally lower R_DS(on) but forfeits top-side thermal extraction-making IRF7759L2TRPBF optimal for thermally dense, 48–60V isolated converter primary/secondary switches demanding both efficiency and thermal headroom.

Availability

IRF7759L2TRPBF is available at Aetrix Electronics and suitable for high-density server VRMs, telecom 48V DC-DC converters, and industrial PLC power supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF7759L2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRF7759L2TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-power-density isolated and non-isolated DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum allowable gate-source voltage for reliable operation?

The absolute maximum V_GS rating is ±20V. Operation beyond ±20V risks permanent gate oxide damage. For robust design, gate drive should be clamped to +12V to +15V during turn-on and –5V to 0V during turn-off to prevent Miller-induced false triggering and ensure safe commutation in high-dv/dt environments.

How does the DirectFET2 package improve thermal performance over traditional TO-220 or D2PAK?

The DirectFET2 package eliminates bond wires and internal leads, placing the silicon die directly on a metal substrate with top-side Drain exposed. This yields R_θJ-Can = 1.2°C/W-3× better than D2PAK-and enables simultaneous cooling from both top (heatsink) and bottom (PCB copper), reducing junction-to-ambient thermal resistance by up to 40% in typical layouts.

Can IRF7759L2TRPBF be used in linear mode (constant current regulation)?

No-it is not characterized or rated for linear (SOA-limited) operation. Its Safe Operating Area curve shows operation is limited to pulse widths ≤400μs and duty cycle ≤2% at high V_DS. For linear regulation, select MOSFETs explicitly specified with extended SOA curves, such as Infineon's OptiMOS™ Linear series.

What is the recommended PCB layout for minimizing switching losses and EMI?

Use a symmetric, low-inductance layout: place gate driver within 5mm of the gate pad; route source to ground plane with ≥6 thermal vias; dedicate a solid 20mm² copper pour under the top Drain for heatsinking; separate high-di/dt power loops from control traces; and apply solder mask defined pads per AN-1035 to ensure uniform reflow and mechanical reliability.