Infineon Technologies IRF7769L2TR1PBF

Overview

IRF7769L2TR1PBF from Infineon Technologies is a 100 V, 74 A N-channel DirectFET™ Power MOSFET optimized for high-frequency synchronous rectification and isolated DC-DC converter primary-side switching. It delivers 2.8 mΩ R_DS(on) at V_GS = 10 V, features 200 nC total gate charge, 110 nC gate-to-drain charge, and operates with ±20 V gate drive. Its 0.7 mm low-profile package enables dual-sided cooling in compact power supplies.

For engineers reviewing the IRF7769L2TR1PBF datasheet, IRF7769L2TR1PBF pinout, IRF7769L2TR1PBF application, or IRF7769L2TR1PBF equivalent, key selection criteria include on-resistance vs. temperature stability, avalanche energy rating (1200 mJ), gate charge profile for ZVS/ZCS compatibility, and thermal resistance to case (1.2 °C/W) under double-sided cooling.

Technical Context

This MOSFET uses HEXFET® silicon in a DirectFET2 Large Can package with top-side drain and bottom-side source terminals-enabling direct thermal coupling to heatsinks on both PCB sides. Its gate threshold voltage (2.7 V typ.) and negative temperature coefficient (−10 mV/°C) support stable current sharing in paralleled configurations.

The device exhibits high C_dv/dt immunity due to minimized source inductance and symmetric layout, critical for hard-switched bridge legs. Its 590 pF reverse transfer capacitance (C_rss) and 11560 pF input capacitance (C_iss) are characterized at V_DS = 25 V, supporting precise gate driver sizing for <44 ns turn-on delay and <92 ns turn-off delay.

Key Specifications

Pinout & Package

IRF7769L2TR1PBF uses the DirectFET2 Large Can package: ultra-low-profile (0.7 mm), copper substrate, top-side drain (D), bottom-side source (S), and perimeter-mounted gate (G). The package enables solder-reflow assembly and dual-sided thermal interface without wire bonds.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) Power MOSFET applications.

Compared with IRF7759L2TR1PBF and IPB180N10N3GATMA1, the IRF7769L2TR1PBF uniquely balances ultra-low R_DS(on), minimal profile, and dual-sided thermal management-making it optimal for next-gen high-power-density converters where board space and thermal headroom are constrained.

Availability

IRF7769L2TR1PBF is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial motor drives, and high-efficiency LLC resonant converters requiring stable component supply across multi-year production cycles.

Supply support for IRF7769L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of MOSFET innovation.

The DirectFET™ product line was developed to replace traditional leaded packages with planar, low-inductance, thermally enhanced alternatives for high-frequency power conversion-targeting datacenter, telecom, and industrial SMPS designs.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRF7769L2TR1PBF supports 74 A continuous drain current at T_C = 25 °C and 20 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects silicon-limited conduction capability under sustained thermal conditions, not package limitation.

Does this MOSFET require a negative gate voltage for reliable turn-off in hard-switched bridges?

No. The device has a gate threshold voltage of 2.7 V (typ.) and −10 mV/°C temperature coefficient, so 0 V gate drive fully turns off the channel at all operating temperatures. Negative gate bias is unnecessary unless operating near avalanche limits or in ultra-high-noise environments.

Can IRF7769L2TR1PBF be used in parallel with identical units without external gate resistors?

Yes-its negative R_DS(on) temperature coefficient (−0.4 %/°C) and matched threshold voltage distribution enable inherent current sharing. However, individual 1–2 Ω gate resistors are still recommended to dampen high-frequency oscillation between paralleled devices.

What is the recommended PCB layout for optimal thermal performance?

Use a minimum 1 in² copper area on both top and bottom layers, connected via ≥12 thermal vias (0.3 mm diameter) under the DirectFET2 footprint. Apply 20–30 μm thick thermal interface material between top metal and heatsink, and ensure solder paste coverage ≥90 % on bottom source pads to achieve R_θJ-PCB ≤ 0.5 °C/W.