Infineon Technologies IRF7769L2TRPBF

Overview

IRF7769L2TRPBF from Infineon Technologies is a 100 V, 74 A N-channel enhancement-mode Power MOSFET in DirectFET2 Large Can package, featuring 2.8 mΩ R_DS(on) at V_GS = 10 V, 200 nC total gate charge, and optimized for high-frequency synchronous rectification in isolated DC-DC converters.

For engineers reviewing the IRF7769L2TRPBF datasheet, IRF7769L2TRPBF pinout, IRF7769L2TRPBF application, or IRF7769L2TRPBF equivalent, key selection criteria include low-profile dual-sided cooling capability, high C_dv/dt immunity, and validated performance under 125°C junction temperature with 100 V blocking rating.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET™ packaging to minimize conduction and switching losses simultaneously. Its gate threshold voltage of 2.7 V (typ) enables robust drive compatibility with standard 5–15 V controllers, while the 110 nC gate-to-drain charge supports fast, controlled turn-off in hard-switched topologies.

The device integrates a low-V_F body diode (1.3 V typ at 74 A), enabling reliable unclamped inductive switching up to 74 A pulse current and 1000 mJ single-pulse avalanche energy. Thermal design leverages direct drain-to-heatsink contact via top-side metal can and bottom-side PCB copper, achieving R_θJ-Can = 1.2 °C/W and R_θJ-PCB = 0.5 °C/W.

Key Specifications

Pinout & Package

IRF7769L2TRPBF uses the DirectFET2 Large Can package: ultra-low profile (<0.7 mm), dual-sided cooling enabled by exposed top-side drain and bottom-side source terminals, compatible with standard SMT reflow profiles up to 260°C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) Power MOSFET applications.

Compared with IRF7759L2TRPBF and IPB180N10N3G, the IRF7769L2TRPBF delivers superior thermal performance per unit volume due to its dual-sided cooling architecture and lowest R_DS(on) in the 100 V class, making it optimal for space- and efficiency-critical high-power density designs.

Availability

IRF7769L2TRPBF is available at Aetrix Electronics and suitable for telecom rectifier modules, server PSU primary switches, and industrial isolated converters requiring stable component supply, long-lifecycle assurance, and RoHS-compliant, halogen-free manufacturing.

Supply support for IRF7769L2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial power supplies where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current at case temperature of 100°C?

The IRF7769L2TRPBF supports 74 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating reflects silicon-limited conduction capability under sustained thermal conditions and assumes proper PCB copper area and heatsinking per AN-1035 guidelines.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 2.0–4.0 V and is fully enhanced at V_GS = 10 V. While a negative gate bias (e.g., –5 V) improves noise immunity in high-dv/dt environments, it is not required for functional turn-off; 0 V gate drive fully depletes the channel under normal operation.

Can the top-side drain pad be used for both thermal and electrical connection?

Yes. The top metal pad is electrically and thermally connected to the drain. It must be soldered or mechanically clamped to a heatsink or cold plate to achieve rated R_θJ-Can = 1.2 °C/W. Electrical isolation from other potentials is mandatory-no floating or insulated mounting is permitted.

How does the body diode performance compare to external Schottky diodes in synchronous rectification?

The integrated body diode exhibits V_SD = 1.3 V (typ) and t_rr = 75 ns at 74 A, outperforming most 100 V Schottky diodes in reverse recovery charge (Q_rr = 220 nC) and thermal coupling. Unlike discrete Schottkys, it shares the same die temperature and eliminates bond-wire inductance, enabling cleaner commutation in high-frequency LLC converters.