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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7779L2TR1PBF

Name: IRF7779L2TR1PBF
Brand: Infineon Technologies
SKU: IRF7779L2TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7779L2TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: IRF7779L2TR1PBF.pdf

Description:: MOSFET N-CH 150V 375A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7779L2TR1PBF from Infineon Technologies is a 150 V, 40 A N-channel enhancement-mode Power MOSFET in DirectFET2 Large Can package, featuring 9.0 mΩ R_DS(on) at V_GS = 10 V, 97 nC total gate charge, and optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers low conduction loss, high dv/dt immunity, and dual-sided cooling capability.

For engineers reviewing the IRF7779L2TR1PBF datasheet, IRF7779L2TR1PBF pinout, IRF7779L2TR1PBF application, or IRF7779L2TR1PBF equivalent, key selection criteria include its 150 V V_DS, 9.0 mΩ on-resistance at 10 V drive, 1.2 °C/W junction-to-can thermal resistance, 110 ns reverse recovery time, and compatibility with standard SMT reflow up to 260 °C.

Technical Context

This MOSFET employs HEXFET silicon with trench-gate structure and is packaged in DirectFET2 - a copper-clip, top-side-drain, double-sided-cooled construction that eliminates bond wires and reduces parasitic inductance. Its gate threshold voltage (4.0 V typ) and low Q_gd/Q_g ratio (33/97 nC) support fast, robust switching in hard-switched and resonant topologies.

The device integrates a low-V_SD body diode (1.3 V max at 40 A), exhibits 170 ns max reverse recovery time, and sustains 1000 mJ single-pulse avalanche energy at I_D = 40 A - enabling reliable operation under unclamped inductive switching stress common in LLC and phase-shifted full-bridge converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports primary-side switching in 48 V–60 V input telecom and server PSUs
R_DS(on)	9.0 mΩ @ V_GS = 10 V - enables <1.5 W conduction loss at 40 A continuous drain current
Q_g	97 nC - determines gate driver power requirement and switching speed in 100–500 kHz applications
V_GS(th)	4.0 V typ - ensures clean turn-on with standard 5 V or 10 V logic-level gate drivers
C_oss	840 pF - impacts zero-voltage switching (ZVS) transition timing and snubber design
R_θJ-Can	1.2 °C/W - enables efficient heat extraction via top-side heatsink or PCB copper plane
I_D (T_C = 25°C)	67 A - defines maximum silicon-limited current before thermal derating begins

Pinout & Package

IRF7779L2TR1PBF uses the DirectFET2 Large Can package: a surface-mount, top-drain, dual-sided-cooled copper-clip construction with 0.7 mm profile and footprint smaller than D2PAK. No external leads - terminals are exposed copper pads on top (Drain) and bottom (Source/Gate).

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-side current path; thermally coupled to heatsink or thermal pad - carries full load current and dissipates >80% of power loss
Bottom Left Pad	Source (S)	Return path for channel current; electrically and thermally connected to PCB ground plane - forms low-inductance source loop
Bottom Right Pad	Gate (G)	Control terminal with 1.5 Ω internal gate resistance - requires <100 nC gate drive for full enhancement and fast edge rates

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous thermal extraction from top (Drain) and bottom (Source/Gate) surfaces - reduces effective R_θJA by up to 40% vs. standard SO-8
Low-profile 0.7 mm height	Permits use in space-constrained 1U server power supplies and ultra-thin industrial converters without airflow obstruction
High C_dv/dt immunity	Withstands >50 V/ns transient voltage slew rates - prevents false turn-on in high-dV/dt half-bridge and LLC resonant circuits
Optimized for synchronous rectification	Body diode t_rr = 110–170 ns and Q_rr = 510–770 nC enable low-loss freewheeling in secondary-side SR FETs
RoHS & halogen-free	Qualified for lead-free reflow up to 260 °C - compatible with IPC-J-STD-020D and JEDEC MSL Level 3 handling

Applications

Telecom Rectifier Module

Server PSU Primary Switch

Use Scenario: 48 V input, 12 V output isolated DC-DC converter operating at 300 kHz in a 3 kW telecom rectifier rack.

IC Role / Device Role / Timing Role: High-side primary switch in phase-shifted full-bridge topology - handles 40 A peak drain current with ZVS-assisted turn-on.

Use Value: 9.0 mΩ R_DS(on) and 1.2 °C/W R_θJ-Can reduce conduction loss by 22% and junction temperature rise by 18 °C vs. comparable D2PAK MOSFETs.

Use Scenario: 54 V input, 12 V output VRM in 1U cloud server PSU with tight thermal envelope and forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetric half-bridge - operates with 100–200 kHz PWM and high duty-cycle bursts.

Use Value: Dual-sided cooling allows 15% higher power density while maintaining T_J < 115 °C under full load and 45 °C ambient.

Industrial Isolated DC-DC Converter

Synchronous Rectifier in LLC Resonant Converter

Use Scenario: 24–48 V input, 5–24 V output isolated converter for programmable logic controllers (PLCs) with extended temperature range (-40 to +85 °C).

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward topology - subjected to repetitive avalanche stress during startup and fault conditions.

Use Value: 1000 mJ E_AS rating and 270 A I_AR ensure robustness against 100 μs inductive spikes without derating.

Use Scenario: Secondary-side synchronous rectifier in 300–500 kHz LLC resonant converter for data center power distribution units (PDUs).

IC Role / Device Role / Timing Role: Low-side SR FET replacing Schottky diode - driven by self-driven or controller-synchronized gate signal.

Use Value: 1.3 V V_SD and 110 ns t_rr cut conduction loss by 45% and reduce switching loss by 30% vs. 40 V Schottky alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7780L2TR1PBF	Same DirectFET2 package, but 100 V V_DS, 7.5 mΩ R_DS(on), 105 nC Q_g	Better suited for 24–48 V input systems where lower V_DS margin is acceptable	Select when system bus voltage ≤ 60 V and lowest possible conduction loss is prioritized over 150 V surge margin
IPB180N15N3G	TO-263-7 package, 150 V V_DS, 9.5 mΩ R_DS(on), 110 nC Q_g, 2.1 °C/W R_θJ-Case	Higher profile (4.7 mm), single-sided cooling only, requires larger PCB footprint	Choose when existing layout uses TO-263 footprints and thermal management relies on bottom-side heatsinking only

Compared with IRF7780L2TR1PBF and IPB180N15N3G, the IRF7779L2TR1PBF uniquely balances 150 V ruggedness, sub-10 mΩ on-resistance, and 0.7 mm ultra-low profile - making it optimal for next-gen high-density, dual-cooled power stages where board height and thermal path efficiency are critical.

Availability

IRF7779L2TR1PBF is available at Aetrix Electronics and suitable for telecom rectifier modules, server PSU primary switches, and industrial isolated DC-DC converters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for IRF7779L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and isolated DC-DC conversion in datacenter, telecom, and industrial power systems.

FAQ

What is the maximum allowable gate-source voltage for IRF7779L2TR1PBF?

The absolute maximum V_GS is ±20 V per datasheet Absolute Maximum Ratings. Operation above ±15 V risks gate oxide degradation, while drive below 6 V may result in incomplete enhancement and elevated R_DS(on). Recommended gate drive is 10–12 V for optimal conduction loss and safe margin against transients.

Does IRF7779L2TR1PBF require a gate resistor for stability?

Yes - a 5–15 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with the device's 1.5 Ω internal gate resistance and 6660 pF C_iss. Without it, overshoot exceeding 15 V or oscillation near 100 MHz can trigger unintended turn-on or increase switching losses.

Can IRF7779L2TR1PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (0.13 %/°C) enables inherent current sharing. For two devices in parallel, ensure matched gate drive routing, symmetrical source inductance (<0.5 nH difference), and shared thermal interface to maintain ΔT_J < 5 °C - achieving >95% current balance at 80 A total load.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes - the integrated body diode has 67 A continuous current rating (T_C = 25°C), 1.3 V forward drop at 40 A, and 510–770 nC Q_rr. When used as an SR FET, it must be actively driven to avoid reverse recovery loss; self-driven configurations require careful dead-time tuning to prevent cross-conduction.

IRF7779L2TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

IRF7779L2TR1PBF FAQ

1.How can I place an order for IRF7779L2TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7779L2TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7779L2TR1PBF reliable?

The price and inventory of IRF7779L2TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7779L2TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF7779L2TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7779L2TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7779L2TR1PBF?

IRF7779L2TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7779L2TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7779L2TR1PBF?

For technical support, including IRF7779L2TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7779L2TR1PBF requirements.

6.How does Aetrix verify that IRF7779L2TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7779L2TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7779L2TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF7779L2TR1PBF?

All IRF7779L2TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7779L2TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7779L2TR1PBF part is unused and in its original packaging.

Return procedure for IRF7779L2TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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