Infineon Technologies IRF7780MTRPBF

Overview

IRF7780MTRPBF from Infineon Technologies (formerly International Rectifier) is a 75V N-channel Power MOSFET in DirectFET® ME package, optimized for high-current switching in motor drives and DC/DC converters. It delivers 4.5 mΩ typical R_DS(on) at V_GS = 10 V, supports 89 A continuous drain current at T_C = 25°C, and features enhanced body diode dv/dt capability up to 12 V/ns - enabling robust synchronous rectification in resonant topologies.

For engineers reviewing the IRF7780MTRPBF datasheet, IRF7780MTRPBF pinout, IRF7780MTRPBF application, or IRF7780MTRPBF equivalent, key selection criteria include its 75 V V_DSS, 124–186 nC total gate charge, 1.3 °C/W R_θJC, avalanche energy rating of 82–133 mJ, and validated performance in half-bridge BLDC inverters with >100 A pulsed capability.

Technical Context

This MOSFET employs a trench-gated silicon process with optimized cell pitch and deep-trench shielding to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of ~560 Ω·nC. Its body diode is engineered for fast, soft recovery with 35–38 ns t_rr, 45–58 nC Q_rr, and I_RRM ≤ 2.2 A - critical for minimizing switching loss and voltage overshoot in hard-commutated bridge legs.

The device uses DirectFET® ME packaging: dual-side cooling enabled by exposed top-drain metal and bottom-source terminals, supporting thermal resistance as low as 12.5 °C/W (junction-to-ambient, double-sided heatsink). Gate threshold voltage is tightly distributed (2.1–3.7 V), ensuring stable turn-on across temperature and reducing risk of spurious conduction in multi-phase gate drivers.

Key Specifications

Pinout & Package

IRF7780MTRPBF uses the DirectFET® ME surface-mount package: ultra-low-profile (0.7 mm height), dual-side cooled, with top-side drain (D) and bottom-side source (S) terminals. The gate (G) is located on the bottom edge, adjacent to source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF7781MTRPBF, the IRF7780MTRPBF offers lower R_DS(on) and proven 82 mJ avalanche capability at 75 V - making it superior for 48 V motor drives with inductive stress. Versus IRF7832MTRPBF, it trades slightly higher R_DS(on) for essential avalanche ruggedness and higher voltage rating.

Availability

IRF7780MTRPBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverters, and synchronous rectifier circuits requiring stable component supply across automotive-grade production cycles and industrial OEM programs.

Supply support for IRF7780MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

This part belongs to the StrongIRFET™ family - engineered specifically for high-reliability, high-current switching in motor control, power conversion, and redundant power architectures where avalanche robustness and thermal performance are critical.

FAQ

What is the maximum allowable gate-source voltage for IRF7780MTRPBF?

The absolute maximum V_GS is ±20 V, per the datasheet's Absolute Maximum Ratings table. Exceeding this risks gate oxide breakdown. For reliable operation, gate drive should be clamped to +10 V to +15 V for full enhancement and -5 V to -10 V for fast turn-off, avoiding prolonged exposure near ±20 V limits.

Can IRF7780MTRPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (confirmed in Fig. 6) enables current sharing across paralleled units. Designers must match gate drive loop inductance and use Kelvin-source connections to minimize imbalance; layout symmetry and thermal coupling to a common heatsink are essential for stable operation above 150 A total current.

Does IRF7780MTRPBF require a gate resistor for stability?

A gate resistor (typically 2.7 Ω, per Fig. 24 test condition) is required to dampen ringing caused by gate-drain capacitance (C_gd) and PCB inductance. Omitting it risks oscillation during switching transitions, especially at high dV/dt, potentially exceeding V_GS rating or causing shoot-through in bridge configurations.

Is the body diode suitable for continuous conduction mode (CCM) in synchronous rectification?

Yes - the body diode is fully characterized for CCM operation: t_rr = 35–38 ns, Q_rr = 45–58 nC, and dv/dt = 12 V/ns ensure minimal voltage overshoot and low recovery loss. However, gate timing must avoid simultaneous conduction; dead-time must exceed t_rr + 2×trr margin to prevent cross-conduction.