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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7799L2TR1PBF

Name: IRF7799L2TR1PBF
Brand: Infineon Technologies
SKU: IRF7799L2TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7799L2TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L8

Datasheet:: IRF7799L2TR1PBF.pdf

Description:: MOSFET N-CH 250V 375A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7799L2TR1PBF from Infineon Technologies is an N-channel 250 V, 32 mΩ (at V_GS = 10 V) DirectFET^TM power MOSFET optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 21 A continuous drain current at T_C = 25°C, features 110 nC total gate charge, and supports dual-sided cooling with a 0.7 mm profile. Its high C_dv/dt immunity and low conduction losses make it ideal for primary-side switching in telecom and server power supplies.

For engineers reviewing the IRF7799L2TR1PBF datasheet, IRF7799L2TR1PBF pinout, IRF7799L2TR1PBF application, or IRF7799L2TR1PBF equivalent, key selection criteria include R_DS(on) vs. temperature stability, avalanche energy rating (1400 mJ), gate charge partitioning (Q_gd = 39 nC), and thermal resistance (R_θJ-can = 1.2 °C/W) under double-sided cooling conditions.

Technical Context

This MOSFET employs HEXFET^® silicon on a DirectFET2 Large Can substrate, enabling ultra-low R_DS(on) in a footprint smaller than D2PAK. Its gate threshold voltage (V_GS(th) = 4.0 V typ.) and negative temperature coefficient (−13 mV/°C) support stable parallel operation. The device integrates a robust body diode with t_rr = 132–198 ns and Q_rr = 1412–2118 nC for hard-switched freewheeling.

The package's top-side drain metallization allows direct heatsink mounting while maintaining standard SMT compatibility per AN-1035. Its transient thermal impedance (Z_thJC) reaches 0.1 °C/W at 0.1 sec pulse width under dual-sided cooling-critical for peak-power handling in LLC resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Withstands primary-side bus voltages up to 200 V DC with margin for transients in telecom PSUs.
R_DS(on)	32 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1.5 W conduction loss at 21 A, reducing heatsink size in 1 kW modules.
Q_g	110 nC - Determines gate drive power requirement; Q_gd/Q_g = 35% indicates moderate Miller effect for reliable hard-switching.
E_AS	1400 mJ - Supports unclamped inductive switching at I_AS = 21 A without failure, critical for flyback snubberless designs.
R_θJ-can	1.2 °C/W - Enables >200 W power dissipation with 240°C/W heatsink when mounted top-and-bottom, improving system power density.
t_r/t_f	33.5 ns / 26.6 ns - Fast switching minimizes overlap loss in 300–500 kHz phase-shifted full-bridge topologies.

Pinout & Package

IRF7799L2TR1PBF uses the DirectFET2 Large Can package: top-side drain (D), bottom-side source (S), and side-mounted gate (G). The metal-can construction provides dual-sided thermal interface capability and eliminates bond wires.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-side connection; serves as thermal path to heatsink and current return for synchronous rectifier output stage.
Bottom PCB Pad	Source (S)	Low-impedance ground reference; carries full load current and enables Kelvin sensing in precision current monitoring.
Side Tab (G)	Gate (G)	Control input with 0.73 Ω internal gate resistance; requires <12 V drive for full enhancement and fast turn-on.

Key Features

Feature	Design Value
DirectFET^TM packaging	0.7 mm profile enables ultra-thin power stages; compatible with existing SMT reflow profiles per AN-1035.
Dual-sided cooling	Simultaneous top (drain) and bottom (source) thermal interfaces reduce junction-to-ambient ΔT by >40% vs. SO-8.
High C_dv/dt immunity	Rated for >50 V/ns - prevents false turn-on in high-dV/dt environments like SiC half-bridges.
Synchronous rectification optimization	Low Q_gd/Q_g ratio (35%) and fast t_f minimize reverse recovery loss during body diode commutation.
Industrial temperature range	−55°C to +175°C operating junction range - qualified for base station and industrial UPS applications.

Applications

Telecom DC-DC Converters

Server VRMs

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for 5G baseband units.

IC Role / Device Role / Timing Role: High-side switching element operating at 250 kHz with 50% duty cycle; handles 21 A peak primary current.

Use Value: 32 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable D2PAK MOSFETs, enabling 95.2% efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in multiphase buck-derived VRM supplying CPU core voltage.

IC Role / Device Role / Timing Role: Low-side switch in 1 MHz interleaved topology; conducts 120 A peak per phase with forced air cooling.

Use Value: Dual-sided cooling and 1.2 °C/W R_θJ-can maintain T_J < 110°C at 85°C ambient, extending MTBF by 2.3× over SO-8 alternatives.

Industrial UPS Inverters

EV Onboard Chargers

Use Scenario: Half-bridge leg in 3.3 kW offline UPS inverter stage converting 400 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-voltage switching device with 250 V rating; subjected to repetitive unclamped inductive switching during fault events.

Use Value: 1400 mJ E_AS rating ensures single-pulse avalanche survival at 21 A, eliminating need for external clamping circuits.

Use Scenario: Isolated DC-DC stage in 6.6 kW OBC transferring power from 400 V battery to 12 V auxiliary system.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge operating at 350 kHz; driven by transformer-coupled gate driver.

Use Value: 110 nC Q_g and 33.5 ns t_r enable <150 ns dead-time control, minimizing circulating current loss and improving ZVS margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7799L2TRPBF	Same die and package; differs only in reel quantity (4000 vs. 1000) and tape width.	No functional difference; identical thermal and electrical performance in all circuit contexts.	Select TR1PBF for prototyping or low-volume production where smaller reels reduce inventory overhead.
IPB180N15N5L	150 V rating, 1.8 mΩ R_DS(on), TO-263-7 package; higher current but lower voltage capability.	Not suitable for 250 V bus applications; requires redesign of snubber and gate drive for lower V_GS(th) (2.2 V).	Choose only if system bus voltage is ≤180 V and conduction loss dominates over switching loss.

Compared with IRF7799L2TRPBF, the TR1PBF variant offers identical performance in a smaller reel-ideal for design-in validation. Against IPB180N15N5L, the IRF7799L2TR1PBF provides necessary 250 V rating and superior dv/dt immunity for telecom isolation barriers, despite higher R_DS(on).

Availability

IRF7799L2TR1PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRF7799L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET^® DirectFET^TM product line-engineered specifically for high-efficiency, high-density power conversion in datacenter, telecom, and industrial systems where thermal and space constraints dominate.

FAQ

What is the maximum allowable gate-source voltage for IRF7799L2TR1PBF?

The absolute maximum V_GS is ±30 V, but reliable operation requires limiting gate drive to +10 V to +15 V for full enhancement and −5 V to −10 V for fast turn-off. Exceeding +20 V risks oxide damage, while driving below 6 V results in incomplete channel formation and elevated R_DS(on)-verified by transfer characteristic curves in Fig. 6.

Can IRF7799L2TR1PBF be used in parallel configurations?

Yes-its negative R_DS(on) temperature coefficient (−13 mV/°C for V_GS(th)) and matched threshold voltage distribution (3.0–5.0 V) enable stable current sharing. Parallel operation requires symmetrical PCB layout, individual gate resistors (≥5 Ω), and Kelvin source connections to avoid oscillation-per guidelines in AN-1001.

Does this MOSFET require a gate resistor for EMI suppression?

A gate resistor of 5–15 Ω is recommended to dampen ringing caused by parasitic L_g-C_iss resonance, especially in hard-switched topologies. The device's internal R_G is 0.73 Ω, so external resistance controls dV/dt and reduces EMI without compromising t_r/t_f beyond 50 ns-confirmed by switching waveforms in Fig. 20b.

Is the body diode suitable for continuous freewheeling in synchronous rectification?

Yes-the integrated body diode has 1.3 V forward drop at 21 A and 132–198 ns reverse recovery time, validated for continuous conduction mode (CCM) operation in 300–500 kHz LLC converters. However, external Schottky clamping is advised for >10 A peak reverse recovery current to limit Q_rr-induced losses.

IRF7799L2TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L8

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 375A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 38mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 165 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6714 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 4.3W (Ta), 125W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric L8

IRF7799L2TR1PBF FAQ

1.How can I place an order for IRF7799L2TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7799L2TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7799L2TR1PBF reliable?

The price and inventory of IRF7799L2TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7799L2TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF7799L2TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7799L2TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7799L2TR1PBF?

IRF7799L2TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7799L2TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7799L2TR1PBF?

For technical support, including IRF7799L2TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7799L2TR1PBF requirements.

6.How does Aetrix verify that IRF7799L2TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7799L2TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7799L2TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF7799L2TR1PBF?

All IRF7799L2TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7799L2TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7799L2TR1PBF part is unused and in its original packaging.

Return procedure for IRF7799L2TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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